• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2127-2128
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• 2012

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.49.2-49.2
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• 2007

• Journal of the Korean Ceramic Society
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• v.41 no.4
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• pp.277-283
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• 2004

To fabricate green sheet of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry, density, and mechanical properties of green sheets have been investigated as a function of amount and composition of organic additives. Measurements of sedimentation and viscosity were employed to determine a proper dispersant and its amount for a well dispersed transparent dielectric powders in non-aqueous system. Green sheets, having various ratios of transparent dielectric powders to transparent dielectric powders＋ binder＋plasticizer and binder to binder＋plasticizer, were fabricated. All the tape casting slurries showed shear thinning effect, that is, the apparent viscosity decreased with the increase of shear rate. It was found that the amount and composition of organic additives were main variables to affect densities and mechanical properties of transparent dielectric green sheets for PDP.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.53-58
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• 2022

Here, the surface characteristics of the dielectric were controlled by introducing the self-assembled monolayers (SAMs) as the intermediate layers on the surface of the AlOx dielectric, and the electrical performances of the organic charge modulated transistor (OCMFET) were significantly improved. The organic intermediate layer was applied to control the surface energy of the AlOx gate dielectric acting as a capacitor plate between the control gate (CG) and the floating gate (FG). By applying the intermediate layers on the gate dielectric surface, and the field-effect mobility (μ_OCMFET) of the OCMFET devices could be efficiently controlled. We used the four kinds of SAM materials, octadecylphosphonic acid (ODPA), butylphosphonic acid (BPA), (3-bromopropyl)phosphonic acid (BPPA), and (3-aminopropyl)phosphonic acid (APPA), and each μ_OCMFET was measured at 0.73, 0.41, 0.34, and 0.15 cm2V-1s-1, respectively. The results could be suggested that the characteristics of each organic SAM intermediate layer, such as the length of the alkyl chain and the type of functionalized end-group, can control the electrical performances of OCMFET devices and be supported to find the optimized fabrication conditions, as an efficient sensing platform device.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.499-502
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• 2008

Effects of a dielectric capping layer on the luminous characteristics of top emitting organic light emitting diodes (TOLEDs) have been analyzed using a classical electromagnetic theory. Special attention was given to the influence of the cavity length on the effectiveness of the capping layer. The luminance characteristics of the TOLEDs influenced by the combined effects of the cavity length and the capping layer thickness. Furthermore, these combined effects also modify the emission spectrum and pattern of the TOLEDs, which result in the improvement of total luminance of the device, but no significant change in the device out-coupling efficiency.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.276-279
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• 2008

Air stable n-type organic field effect transistors (OFETs) based on CB60B are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of $0.05\;cm^2P/V\;s$ in ambient air. Replacing the gate dielectric material by $SiO_2$ resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in ambient air.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.445-448
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• 2006

Bias stress effect in pentacene organic thin-flim transistors with cross-linked PVA gate dielectric is analyzed. For negative gate bias stress, positive threshold voltage shift is observed. The injected charges from the gate electrode to the defect states of gate dielectric are regarded as the main origin of $V_T$ shift. The reduced bias stress effect using $SiO_2$ blocking layer confirms the assumed mechanism. It is also demonstrated that the inverter with $SiO_2$ blocking layer shows the negligible hysteresis owing to the reduced bias stress effect.

• Journal of the Semiconductor & Display Technology
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• v.4 no.3 s.12
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• pp.5-9
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link break-age structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.67-72
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• 2005

The bonding structure of organic materials such as fluorinated amorphous carbon films was classified into two types due to the chemical shifts. The electrical properties of fluorinated amorphous carbon films also showed very different effect of two types notwithstanding a very little difference. Fluorinated amorphous carbon films with the cross-link breakage structure existed large leakage current resulting from effect of the electron tunneling. Increasing the cation due to the electron-deficient group increased the barrier height of the films with the cross-link amorphous structure, therefore the electric characteristic of the final materials with low dielectric constant was also improved. The lowest dielectric constant is 2.3 at the sample with the cross-link amorphous structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.3 s.357
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• pp.1-5
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• 2007

SiOC films were made using the oxygen and bistrimethylsilylmethane mixed precursor. The chemical properties of SiOC films divided into three properties, organic, hybrid and inorganic depending on the flow rate ratio between oxygen and bistrimethylsilylmethane precursor. The films with organic properties decreased dielectric constant, because of pore incorporation in final materials. In this study, the porosity of SiOC films with organic properties was investigated using the Makwell-Garnett equation. The porosity of the films could be correlated with the blue shift in the infrared spectra scopy, and increased with the decreasing the dielectric constant of the film.