• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.203-213
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• 1996

In physical and reactive extraction system using equilibrium extraction equipment, the effects of extractants, concentration of extractant, and solvent on the degree of extraction were investigated. The organic acids used were acrylic acid and metacrylic acid. Extractants were n-octylamine(OA), di-n-octylamine(DOA), tri-n-octylamine(TOA) and tri-octylmetyl ammonium chloride(TOMAC ; Aliquat 336). We found that the degree of extraction for reactive extraction was 2~9 times than that for physical extraction and that effect of extractants on the degree of extraction of organic acid was the order of OA

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.224-231
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• 2000

The exfoliation of graphite (layer) was progressed due to the irreversible insertion of PC molecules between graphene layers, when propylene carbonate (PC) solvent was used as the organic solvents. The problem could be mitigated by the replacement of PC by ethylene carbonate (EC). But, the freezing point of EC-based electrolyte increased due to the high freezing point of $EC(36.2^{\circ}C)$. Therefore, EC+PC mixed electrolyte is expected as a good organic electrolyte for lithium ion battery. The EC-based organic electrolyte containing PC within pertinent quantity can be expected to have high molar conductivity and reduced exfoliation of graphite layer. The dielectric constant and molar conductivity of $LiPF_6/PC+EC+DEC$ electrolyte was investigated with a variation in the PC content. The electrochemical properties of carbon electrode in the electrolyte were also investigated. Molar conductivity and dielectric constant increased linearly by increasing the PC volume fraction in the electrolyte. The results of charge-discharge test for carbon/electrolyte/Li cell indicated that the initial irreversible specific capacity(IIC) of MCMB-6-28s and MPCF3000 decreased by the addition of $0.83 vol\%$ of PC, but increased with PC content over than $0.83 vol\%$. In the case of MPCF3000 and PCG100 having less than $10 vol\%$ PC, IIC was lower than 50 mAh/g. The discharge specific capacities varied with carbon material, but did not vary with PC content in the electrolyte.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1777-1779
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• 1999

SMM is a dynamic noncontact electric force microscopy that allows simultaneous access to the electrical properties of molecular system such as surface potential, surface charge, dielectric constant and conductivity along with the topography. SNOAM is a new tool for surface imaging which was introduced as one application of AFM. Operated with non-contact forces between the optical fiber and sample as well as equipped with the piezoscanners, the instrument reports on surface topology without damaging or modifying the surface for measuring of optical characteristic in the films. Here we report our recent results of its application to nanoscopic study of domain structures and electrical functionality in organic thin films by SMM. Furthermore, we have illustrated the SNOAM image in obtaining the merocyanine dye films as well as the optical image.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.1-198.1
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• 2016

Organic light-emitting diode (OLED) displays have promising potential to replace liquid crystal displays (LCDs) due to their advantages of low power consumption, fast response time, broad viewing angle and flexibility. Organic light emitting materials are vulnerable to moisture and oxygen, so inorganic thin films are required for barrier substrates and encapsulations.[1-2]. In this work, the silicon-based inorganic thin films are deposited on plastic substrates by plasma-enhanced chemical vapor deposition (PECVD) at low temperature. It is necessary to deposit thin film at low temperature. Because the heat gives damage to flexible plastic substrates. As one of the transparent diffusion barrier materials, silicon oxides have been investigated. $SiO_x$ have less toxic, so it is one of the more widely examined materials as a diffusion barrier in addition to the dielectric materials in solid-state electronics [3-4]. The $SiO_x$ thin films are deposited by a PECVD process in low temperature below $100^{\circ}C$. Water vapor transmission rate (WVTR) was determined by a calcium resistance test, and the rate less than $10.^{-2}g/m^2{\cdot}day$ was achieved. And then, flexibility of the film was also evaluated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.615-619
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• 2008

A molecular memory device which has a structure of Al/$Al_2O_3$/ASA-15 LB monolayer/Ti/Al device, was fabricated. To study a charge transfer mechanism of molecular memory devices, current density-voltage (J-V) characteristics were measured at an increasing temperature range from 10 K to 300 K with an interval of 30 K. Strong temperature-dependent electrical property and tunneling through organic monolayer at low bias (below 0.5 V) were appeared. These experimental data were fitted by using a theoretical formula such as the Simmons model. In comparison between the theoretical and the experimental results, it was verified that the fitting results using the Simmons model about direct tunneling was fairly fitted below 0.5 V at both 300 K and 10 K. Hopping conduction was also dominant at all voltage range above 200 K due to charges trapped by defects located within the dielectric stack, including the $Al_2O_3$, organic monolayer and Ti interfaces.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1349_1350
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• 2009

Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

• Korean Journal of Materials Research
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• v.12 no.8
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• pp.595-599
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• 2002

A homogeneous and stable, amorphous-type, anorthite (CaO $Al_2$$O_3$ $2SiO_2$)powder was synthesized by an organic-inorganic steric entrapment route. Polyvinyl alcohol ( PVA) was used as an organic carrier for the precursor ceramic gel. The PVA content, its degree of polymerization and type of silica sol had a significant influence on the calcination and crystallization behavior of the precursors. For densifiction and crystallization at low temperature, porous and soft, amorphous-type anorthite powder was planetary milled for 20h. The milled powder crystallized to stable anorthite phase and densified to a relative density of 94% below $1000^{\circ}C$. In the development of crystalline phases of the planetary milled powder, omisteinbergite phase was unusually observed at $900^{\circ}C$, and then anorthite was observed at $950^{\circ}C$. The sintered anorthite had a thermal expansion coefficient of $4.6$\times$10^{-6}$ /$^{\circ}C$ and a dielectric constant of 7.5 at 1 MHz. Finally, the anorthite synthesized by the new process is expected to be an useful material for low-firing ceramic substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.45-48
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• 2002

Poly(3-hexylthiophene) or P3HT based organic thin film transistor (OTFT) array was fabricated on flexible poly carbonate substrates and the electrical characteristics were investigated. As the gate dielectric, a dual layer structure of polyimide-$SiO_2$ was used to improve the roughness of $SiO_2$ surface and further enhancing the device performance and also source-drain electrodes were $O_2$ plasma treated for improvement of the electrical properties, such as drain current and field effect mobility. For the active layer, polymer semiconductor, P3HT layer was printed by contact-printing and spin-coating method. The electrical properties of OTFT devices printed by both methods were evaluated for the comparison. Based on the experiments, P3HT-based OTFT array with field effect mobility of 0.02~0.025 $cm^{2}/V{\cdot}s$ and current modulation (or $I_{on}/I_{off}$ ratio) of $10^{3}\sim10^{4}$ was fabricated.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.139-142
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• 2007

Organic field-effect transistor (FET) based on a copper Phthalocyanine (CuPc) material as an active layer and a $SiO_2$ as a gate insulator were fabricated and analyzed. We measured the typical FET characteristics of CuPc in air. The electrical characteristics of the CuPc FET device were analyzed by a Maxwell-Wagner model. The Maxwell-Wagner model employed in analyzing double-layer dielectric system was helpful to explain the C-V and I-V characteristics of the FET device. In order to further clarity the channel formation of the CuPc FET, optical second harmonic generation (SHG) measurement was also employed. Interestingly, SHG modulation was not observed for the CuPc FET. This result indicates that the accumulation of charge from bulk CuPc makes a significant contribution.