• 제목/요약/키워드: Organic dielectric

검색결과 411건 처리시간 0.024초

Dielectric Properties of Poly(vinyl phenol)/Titanium Oxide Nanocomposite Thin Films formed by Sol-gel Process

  • Myoung, Hey-J;Kim, Chul-A;You, In-Kyu;Kang, Seung-Y;Ahn, Seong-D;Kim, Gi-H;Oh, ji-young;Baek, Kyu-Ha;Suh, Kyung-S;Chin, In-Joo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1572-1575
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    • 2005
  • Poly(vinyl phenol)(PVP)/$TiO_2$ nanocomposite the films have been prepared incorporating metal alkoxide with vinyl polymer to obtain high dielectric constant gate insulating material for a organic thin film transistor. The surface composition, the morphology, and the thermal and electrical properties of the hybrid nanocomposite films were observed by ESCA, scanning electron microscopy (SEM), atomic force microscopy(AFM), and thermogravimetric analysis (TGA). Thin hybrid films exhibit much higher dielectric constants (7.79 at 40wt% metal alkoxide).

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저 유전체 SiOC 박막의 열처리 공정 온도에 따른 전기적인 특성에 관한 연구 (Study on the Electrical Characteristic of Low-k SiOC films due to the Appropriate Annealing Temperature)

  • 오데레사
    • 대한전자공학회논문지SD
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    • 제48권8호
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    • pp.1-4
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    • 2011
  • SiOC 박막과 같은 유무기 하이브리드 저유전 물질에서의 열처리효과에 의한 전기적인 특성의 변화와 유전상수에 관하여 연구하였다. SiOC 박막은 분극에 따른 특성을 분석하기 위해서 TMS과 산소의 혼합가스를 이용한 CVD방법에 의하여 증착되었으며, 300~500도까지 변화하면서 열처리를 하였다. SiOC 박막은 열처리에 의하여 유전상수는 더욱 낮아지며, 400도에서 열처리 한 경우 전기적인 특성이 우수한 것을 확인하였다. XRD 패턴에 의하면 300도이하에서 열처리한 박막과 400도 이상에서 열처리 한 경우 결합구조가 달라지는 것을 알 수 있고 400도 근처에서 급격한 변화가 일어나고 있는 것을 확인하였다.

유전체 장벽 방전 플라즈마 반응기를 이용한 페놀 처리 (Phenol Treatment Plasma Reactor of Dielectric Barrier Discharge)

  • 박영식
    • 한국환경과학회지
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    • 제21권4호
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    • pp.479-488
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    • 2012
  • A Dielectric barrier discharge (DBD) plasma is shown in the present investigation to be effective of phenol degradation in the aqueous solutions in batch reactor with continuous air bubbling. Removal of phenol and effects of various parameters on the removal efficiency in the aqueous solution with high-voltage streamer discharge plasma are studied. The effect of 1st voltage (80 ~ 220 V), air flow rate (3 ~ 7 L/min), pH (3 ~ 11), electric conductivity of solution (4.16 ${\mu}S$/cm, deionized water) ~ 16.57 mS/cm (addition of NaCl 10 g/L) and initial phenol concentration (2.5 ~ 20.0 mg/L) were investigated. The observed results showed that phenol degradation was higher in the basic solution than that of the acidic. The optimum values on the 1st voltage and air flow rate for phenol degradation were 140 V and 6 L/min, respectively. It was considered that absorbance variation of $UV_{254}$ of phenol solution can be use as an indirect indicator of change of the non-biodegradable organic compounds within the treated phenol solution. Electric conductivity was not influenced the phenol degradation. To obtain the removal efficiency of phenol and COD of phenol over 97 % (initial phenol concentration, 10.0 mg/L), 80 min and 120 min were need, respectively. Phenol and COD degradation showed a pseudo-first order kinetics.

Polyvinylchloride에 있어 가소제의 첨가가 유기안정제의 내 방사성 및 유전, 기계적 특성에 미치는 영향 (Effects of Plasticizer to Polyvinylchloride on Radio-resistance of Organic Stabilizer,Dielectric and Mechanical Characteristics under the Influence of Radiation)

  • 김봉흡;강도열;이재인
    • 전기의세계
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    • 제26권2호
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    • pp.89-94
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    • 1977
  • In order to investigate the properties of radiation resistance together with dielectric, and mechanical relaxation behaviors of polyvinylcholoride exposed to several different doses under the .gamma.-ray of Co$^{60}$ source, several observations were carried out on the exposed specimens propared by mixing dibutyl-tin-dilaulate and dibutyl-tin-dimaleate as stabilizer with or without adding dioctyl-phthalate as plasticizer. Conclusions obtained from the study are as follows: The origin of the absorption band at 1,540-1,640$cm^{-1}$ / on I.R. spectrum seems to be RCOO- ion originated from ionization of the stabilizer, and this peak can be useful as a measure of radiation resistance on polyvinylchloride. Addition of increasing plasticizer to polyvinylchloride exhibits increasing radiation resistance and the reason for this result may be attributed to aromatic resonance absorption of radiation energy by diotylphthalate. On dose dependent dielectric characteristics, nonplastized specimen shows a peak at about 10 Mrad and that this peak disappears on the plastification of specimens. Those phenomena may be explainable in considering the statistical distribution of scissored chain molecular segments as well as the plastification process of plasticizer to polyvinylchloride chain molecules.

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Structure and Properties of Polynorbornene Derivatives: Poly(norbornene dicarboxylic acid dialkyl ester)s and Poly(norbornene dimethyl dicarboxylate)s

  • Shin, Boo-Gyo;Cho, Tai-Yon;Yoon, Do-Y.;Liu, Binyuan
    • Macromolecular Research
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    • 제15권2호
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    • pp.185-190
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    • 2007
  • Poly(norbornene dimethyl dicarboxylate)s, (PNDMD)s, were prepared by addition polymerization with palladium(II) catalyst from pure exo-monomers, and their structure and properties were compared with those of poly(norbornene dicarboxylic acid dialkyl ester)s, (PNDADA)s. Both polymer series exhibited good solubility in general organic solvents and excellent thermal stability up to $330^{\circ}C$. Wide-angle X-ray scattering (WAXS) study indicated the presence of nano-scale layer-like order in amorphous PNDADAs, while PNDMDs showed random amorphous structure. The glass transition temperatures and dielectric constants of solid polymers were found to decrease as the alkyl side-chain length increases for both polymer series. However, PNDMDs showed lower glass transition temperatures and higher dielectric constants, as compared with those of PNDADAs containing the same alkyl substituents. This difference, caused by the higher side-group mobility of PNDMDs, may be closely related to the nano-scale order in amorphous PNDADAs and its absence in PNDMDs.

점도증가에 따른 절연용 실리콘유의 유전손실 (Dielectric loss of silicone oils for insulation due to the increase of viscosity)

  • 이용우;조경순;김왕곤;홍진웅
    • E2M - 전기 전자와 첨단 소재
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    • 제8권5호
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    • pp.587-593
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    • 1995
  • Silicone oils used insulating substances exhibit the both of organic and inorganic properties, and it has many superior characteristics such as the high thermal resistance and low thermal oxidation level when compared to other insulation oils. In order to investigate the dielectric loss due to the increase of viscosity, silicone oils of viscosity 1, 2, 5[cSt] had been chosen as the specimen and experiment has been performed in the temperature range of -70[.deg. C] - 65[.deg. C] and frequency range of 30 - 1*10$\^$5/[Hz]. As a result, the linear decrease of loss at low frequency region in high temperature was due to the influence of applying frequency, whereas the increase of loss at high frequency region was contributed by electrode's resistance. And increasing viscosity, the activation energy increased from 3.77[kcal/mole] to 7.21[kcal/mole]. The dipole moment of specimen was become clear 1.48 - 2.26[debyel in high temperature region(5 - 65[.deg. C]) and 1.05 - 1.80[debye] in low temperature region (-70 - -25[.deg. C])respectively.

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고전압용 실리콘고무의 전기적 특성 (The Electrical Properties of High Voltage Silicone Rubber)

  • 김성필;송정우;이종필;이수원;김왕곤;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.779-782
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    • 2000
  • Silicone rubbers are first silicone polymers and has named silicone from existence of Si-O bond similar to Keton. Silicon in organic compound has been called silicone, and linear or network polymers. Silicone rubbers have been used as an power insulator because they are well weather proof, ozone proof and have excellent electric characteristics, thermal stability, cold resistance and low surface energy. Especially, it is known that they have very excellent characteristics at 200[$^{\circ}C$]. For this study, we made silicone rubbers as specimens and we measured dielectric loss tangent due to applied voltage at temperature range 25[$^{\circ}C$] to 180[$^{\circ}C$] and frequency range 20[Hz] to 1${\times}$10$\^$6/[Hz] to examine dielectric properties. We measured dielectric loss tangent to study the insulation performance of silicone rubbers.

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나노스케일 소자제작을 위한 유기초박막의 전기적특성에 관한 연구 (A Study on the Electrical Properties of Organic Ultra Thin Films for Nanoscale Device Manufacture)

  • 송진원;한창수;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.384-385
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    • 2005
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. It is revealed that the dielectric relaxation time $\tau$ of mono layers in the isotropic polar orientational phase is determined using a liner relationship between the monolayer compression speed a and the molecular area $A_m$. Compression speed a was about 30, 40, 50mm/min. also, LB layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9 ~ 21 and we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V.

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Low Temperature Preparation of Hafnium Oxide Thin Film for OTFT by Atomic Layer Deposition

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • 제9권6호
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    • pp.247-250
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    • 2008
  • Hafnium dioxide ($HfO_2$) thin film as a gate dielectric for organic thin film transistors is prepared by plasma enhanced atomic layer deposition (PEALD). Mostly crystalline of $HfO_2$ film can be obtained with oxygen plasma and with water at relatively low temperature of $200^{\circ}C$. $HfO_2$ was deposited as a uniform rate of $1.2\;A^{\circ}$/cycle. The pentacene TFT was prepared by thermal evaporation method with hafnium dioxide as a gate dielectric. The electrical properties of the OTFT were characterized.

Synthesis and characterization of nanocrystalline Al0.5Ag0.5TiO3 powder

  • Kumar, Sandeep;Sahay, L.K.;Jha, Anal K.;Prasad, K.
    • Advances in nano research
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    • 제1권4호
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    • pp.211-218
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    • 2013
  • A low-cost, green and reproducible citric acid assisted synthesis of nanocrystalline $Al_{0.5}Ag_{0.5}TiO_3$ (n-AAT) powder is reported. X-ray, FTIR, energy dispersive X-ray, transmission electron microscopy and scanning electron microscopy analyses are performed to ascertain the formation of n-AAT. X-ray diffraction data analysis indicated the formation of monoclinic structure. Spherical shaped particles having the sizes of 3-15 nm are found. The mechanism of nano-transformation for the soft-chemical synthesis of n-AAT has been explained using simple organic chemistry rules and nucleation and growth theory. Dielectric study revealed that AAT ceramic might be a suitable candidate for capacitor applications.