• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.896-898
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• 2009

The printed electrodes of organic thin-film transistors (OTFTs) were fabricated by screen printing using nanoparticle silver pastes. The screen printed OTFT corresponds to channel lengths between 7.6 to 82.6 ${\mu}m$ (designed L=10 to 80 ${\mu}m$) on the $150{\times}150mm^2$ paper. The channel length deviations for 40 to 80 ${\mu}m$ patterns were less than 5 %. However, the channel lengths for 10 to 30 ${\mu}m$ patterns were increased by 20 %. The screen printed bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) OTFTs obtained had a field-effect mobility as large as 0.08 (${\pm}0.02$) $cm^2$/Vs, an on/off current ratio of $10^5$ and a subthreshold slope of 1.95 V/decade.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.563-565
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• 2009

We introduce the new modification approaches of photocrosslinkable poly (4-vinylphenol) (PVP) for low hysteresis organic thin film transistors (OTFTs). The dielectric layers were composed of different PVP resin, low molecular melamine, and halogen free photo-initiator. The low hysteresis OTFT from one of the organic gate dielectrics has been realized. The electrical performance of low hysteresis OTFT with photocrosslinkable PVP exhibited a field-effect mobility of 0.2 cm2/Vs, a threshold voltage of - 0.04V, hysteresis of 0.4V.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1502-1503
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• 2007

In this paper, inductive coupled LC balun has been desi gned and simulated for embedding into an organic packaging substrate. Inductive coupling method was applied to obtain wide band characteristics, and high dielectric film was utilized to reduce a size of the balun. The proposed balun has a novel scheme which consists of three embedded LC resonators with inductive coupling. This proposed balun has relatively small inductance and capacitance values which can be easily embedded into the organic packaging substrate. Furthermore, it has a good phase imbalance characteristic. The simulated results of proposed balun are an insertion loss of 1.2 dB, a return loss of 10 dB, a phase imbalance of 1 degree at frequency bandwidth of 750 MHz ranged from 1.8 GHz to 2.55 GHz, respectively. This balun has an area of $2mm{\tims}3.5mm{\times}0.66mm$ (height).

• Journal of the Korean Applied Science and Technology
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• v.29 no.2
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• pp.199-204
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• 2012

Organic thin-film transistors (OTFTs) have received considerable attention because their potential applications for nano-scale thin-film structures have been widely researched for large-scale integration industries, such as semiconductors and displays. However, research in developing n-type materials and devices has been relatively shortage than developing p-type materials. Therefore, we report on the fabrication of top-contact [6,6]-phenyl-C61-butyricacidmethylester (PCBM) TFTs by using three different solvent, o-dichlorobenzene, toluene and chloroform. An appropriate choice of solvent shows that the electrical characteristics of PCBM TFTs can be improved. Moreover, our PCBM TFTs with the cross-linked Poly(4-vinylphenol) dielectric layer exhibits the most pronounced improvements in terms of the field-effect mobility (${\sim}0.034cm^2/Vs$) and the on/off current ratio (${\sim}1.3{\times}10^5$) for our results. From these results, it can be concluded that solvent-modification of an organic semiconductor in PCBM TFTs is useful and can be extended to further investigations on the PCBM TFTs having polymeric gate dielectrics. It is expected that process optimizations using solution-processing of organic semiconductor materials will allow the development of the n-type organic TFTs for low-cost electronics and various electronic applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.336-336
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• 2011

Over the past decades, organic semiconductors have been investigated intensely for their potential in a wide range of optoelectronic device applications since the organic materials have advantages for very light, flexible and low cost device fabrications. In this study, we fabricated small-molecule organic solar cells (OSCs) based on chloro[subphthalocyaninato]boron(III) (SubPc) as an electron donor and $C_{60}$ as an electron acceptor material. Recently SubPc, a cone-shaped molecule with $14{\pi}$-electrons in its aromatic system, has attracted growing attention in small-molecule OSC applications as an electron-donating material for its greater open-circuit voltage (VOC), extinction coefficient and dielectric constant compared to conventional planar metal phthalocyanines. In spite of the power conversion efficiency (PCE) enhancement of small-molecule OSC using SubPc and $C_{60}$, however, the study on the interface between donor-acceptor heterojunction of this system is limited. In this work, SubPc thin films at various thicknesses were deposited by organic molecular beam deposition (OMBD) and the evolution of surface morphology was observed using atomic force microscopy (AFM) and field emission scanning electron microscopy (FE-SEM). We also investigated the influence of film thickness and surface morphology on the PCE of small-molecule OSC devices.

• Korean Journal of Materials Research
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• v.15 no.3
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• pp.202-208
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• 2005

The surface states of gate dielectrics affect device performance severely in Pentacene OTFTs. We have fabricated organic thin-film transistors (OTFTs) using pentacene as an active layer with chemically modified $SiO_2$ gate dielectrics. The effects of the surface treatment of $SiO_2$ on the electric characteristics of OTFTS were investigated. The surface of $SiO_2$ gate dielectric was treated by normal wet cleaning process, $O_2-plasma$ treatment, hexamethyldisilazane (HMDS), and octadecyltrichlorosilane (OTS) treatment. After the surface treatments, the contact angles and surface free energies were measured in order to analyze the surface state changes. In the electrical measurements, typical I-V characteristics of TFTs were observed. The field effect mobility, $\mu$, was calculated to be $0.29\;cm^2V^{-1}s^{-1}$ for OTS treated sample while those for the HMDS, $O_2$ plasma treated, and wet-cleaned samples were 0.16, 0.1, and $0.04\;cm^2V^{-1}s^{-1}$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.200-200
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• 2003

Polycrystalline Si(polysilicon) TFTs have opened a way for the next generation of display devices, due to their higher mobility of charge carriers relative to a-Si TFTs. The polysilicon W applications extend from the current Liquid Crystal Displays to the next generation Organic Light Emitting Diodes (OLED) displays. In particular, the OLED devices require a stricter control of properties of gate oxide layer, polysilicon layer, and their interface. The polysilicon layer is generally obtained by annealing thin film a-Si layer using techniques such as solid phase crystallization and excimer laser annealing. Typically laser-crystallized Si films have grain sizes of less than 1 micron, and their electrical/dielectric properties are strongly affected by the presence of grain boundaries. Impedance spectroscopy allows the frequency-dependent measurement of impedance and can be applied to inteface-controlled materials, resolving the respective contributions of grain boundaries, interfaces, and/or surface. Impedance spectroscopy was applied to laser-annealed Si thin films, using the electrodes which are designed specially for thin films. In order to understand the effect of grain size on physical properties, the amorphous Si was exposed to different laser energy densities, thereby varying the grain size of the resulting films. The microstructural characterization was carried out to accompany the electrical/dielectric properties obtained using the impedance spectroscopy, The correlation will be made between Si grain size and the corresponding electrical/dielectric properties. The ramifications will be discussed in conjunction with active-matrix thin film transistors for Active Matrix OLED.

• Journal of Environmental Science International
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• v.23 no.5
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• pp.985-993
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• 2014

For the field application of dielectric barrier discharge plasma reactor, a multi-plasma reactor was investigated for the inactivation of microorganisms in sewage. We also considered the possibility of degradation of non-biodegradable matter ($UV_{254}$) and total organic carbon (TOC) in sewage. The multi-plasma reactor in this study was divided into high voltage neon transformers, gas supply unit and three plasma modules (consist of discharge, ground electrode and quartz dielectric tube). The experimental results showed that the inactivation of microorganisms with treated water type ranked in the following order: distilled water > synthetic sewage effluent >> real sewage effluent. The dissolved various components in the real sewage effluent highly influenced the performance of the inactivation of microorganisms. After continuous plasma treatment for 10 min at 180 V, residual microorganisms appeared below 2 log and $UV_{254}$ absorbance (showing a non-biodegradable substance in water) and TOC removal rate were 27.5% and 8.5%, respectively. Therefore, when the sewage effluent is treated with plasma, it can be expected the inactivation of microorganisms and additional improvement of water quality. It was observed that the $NH_4{^+}$-N and $PO{_4}^{3-}$-P concentrations of sewage was kept at the constant plasma discharging for 30 min. On the other hand, $NO_3{^-}$-N concentration was increased with proceeding of the plasma discharge.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.117-122
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• 2007

LB method is one of the most interesting technique to arrange certain molecular groups at precise position relative to others. Also, the LB deposition technique can fabricate extremely thin organic films with a high degree of control over their thickness and molecular architecture. In this way, new thin film materials can be built up at the molecular level, and the relationship between these artificial structures and the properties of materials can be explored. In this paper, evaluation of physical properties was made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current on the monolayer films of phospolipid monomolecular DLPC. Lipid thin films were manufacture by detecting deposition for the accumulation and the current was measured after the electric bias was applied across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.