• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.166.2-166.2
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• 2014

In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

• 한국표면공학회지
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• 제22권3호
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• pp.109-117
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• 1989

The effect of heft treatment on the characteristic properties of insulation layer is studied for two kinds of non-oriented silicon steels, which were insulation-coates with various kinds of inorganic and inorganic-organic complex coating solutions. In addition, how the carbon contained in the insulation layer would affect the carbon content and the magnetic properties of the steel substrates is examined. Lower temperature heat treftment ($480^{\circ}C$ for 0.5hr) is found to render morw favorable surface qualities, wheras higher temperature heat treatment ($790^{\circ}C$ for 2hr) better core loss due to grin growt occurred during the heat treatment. Decarburization of the steel substrate is also found unaffectrd by the presence of carbon in the insulation layer.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.17-22
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• 2009

Two different organic-inorganic hybrid thin film transistors (OITFTs) with the structures of glass/ITO/ZnO/PMMA/Al (staggered structure) and glass/ITO/PMMA/ZnO/Al (inverted staggered structure), were fabricated and their electrical and structural properties were compared. The ZnO thin films used as active channel layers were deposited by the atomic layer deposition (ALD) method at a temperature of $100^{\circ}C$. To investigate the effect of the substrates on their properties, the ZnO films were deposited on bare glass, PMMA/glass and ITO/glass substrates and their crystal properties and surface morphologies were analyzed. The structural properties of the ZnO films varied with the substrate conditions. The ZnO film deposited on the ITO/glass substrate showed better crystallinity and morphologies, such as a higher preferred c-axis orientation, lower FWHM value and larger particle size compared with the one deposited on the PMMA/glass substrate. The field effect mobility ($\mu$), threshold voltage ($V_T$) and $I_{on/off}$ switching ratio for the OITFT with the staggered structure were about $0.61\;cm^2/V{\cdot}s$, 5.5 V and $10^2$, whereas those of the OITFT with the inverted staggered structure were found to be $0.31\;cm^2/V{\cdot}s$, 6.8 V and 10, respectively. The improved electrical properties for the staggered OITFTs may originate from the improved crystal properties and larger particle size of the ZnO active layer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.543-544
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• 2006

Pentacene thin film transistors fabricated without photolithographic patterning were fabricated on the plastic substrates. Both the organic/inorganic thin films and metallic electrode were patterned by shifting the position of the shadow mask which accompanies the substrate throughout the deposition process. By using an optically transparent zirconium oxide ($ZrO_2$) as a gate insulator and octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayer (SAM) to increase the adhesion between the plastic substrate and gate insulator and the mobility with surface treatment, high-performance transistor with field effect mobility $.66\;cm^2$/V s and $I_{on}/I_{off}$>$10^5$ was formed on the plastic substrate. This technique will be applicable to all structure deposited at low temperature and suitable for an easy process for flexible display.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1185-1188
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• 2006

Pentacene thin film transistors (OTFTs) on flexible polyimide substrate using electroplated gate electrode and organic/high-k inorganic bilayer gate dielectric layer. Incorporation of thin atomic-layer deposited $HfO_2$ layer on the PVP organic gate dielectric layer reduced the gate leakage and as a result enhanced the current on/off ratio.

• 폴리머
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• 제24권3호
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• pp.389-398
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• 2000

폴리카보네이트 표면에 spin-coating한 유/무기 복합 코팅막을 자외선 경화와 가열(12$0^{\circ}C$, 12시간)처리함으로써 약 4~13 $\mu\textrm{m}$ 두께의 투명한 내마모성 유/무기 복합코팅막을 제조하였다. 코팅용액은 무기상과 유기상을 각각 0 : 100, 20 : 80, 30 : 70, 50 : 50, 80 : 20 중량비로 혼합한 다음 광개시제, 증감제 및 계면활성제를 첨가하여 제조하였다. 무기상은 TEOS와 실란커플링제 MPTMS을 1 : 2 혹은 2 : 1몰비로 흔합하여 졸ㆍ겔 반응으로 제조하였으며, 유기상은 2관능형 urethane acrylate 올리고머, 다관능형 TMPTA와 HDDA를 4:3:3 wt% 비율로 흔합하여 제조하였다. 유/무기복합상의 화학적 변화는 FT-IR, $^{29}$ Si-NMR로 분석하였으며, 열분석과 코팅층 표면 형상은 TGA/DSC, SEM, AFM으로 분석하였다. 무기물의 함량과 실란커플링제의 첨가량이 증가 할수록 분자수준의 흔화도가 개선되고 표면 평활도와 내마모성도 향상되었다. 즉 약 10 $\AA$ 이하의 표면 거칠기와 약 15$0^{\circ}C$의 T$_{g}$를 나타내는 시료는 500회 마모시험 전후 단지 16%의 광투과도 감소만을 보인 반면에, 무코팅 폴리카보네이트를 46%의 광투과율 감소를 나타내었다..

• 한국재료학회지
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• 제34권9호
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• pp.439-447
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• 2024

Organic-inorganic hybrid coating films have been used to increase the transmittance and enhance the physical properties of plastic substrates. Sol-gel organic-inorganic thin films were fabricated on polymethylmethacrylate (PMMA) substrates using a dip coater. Metal alkoxide precursor tetraethylsilicate (TEOS) and alkoxy silanes including decyltrimethoxysilane (DTMS), 3-glycidoxypropyltrimethoxysilane (GPTMS), phenyltrimethoxysilane (PTMS), 3-(trimethoxysilyl)propyl methacrylate (TMSPM) and vinyltrimethoxysilane (VTMS) were used to synthesize sol-gel hybrid coating solutions. Sol-gel synthesis was confirmed by the results of FT-IR. Cross-linking of the Si-O-Si network during synthesis of the sol-gel reaction was confirmed. The effects of each alkoxy silane on the coating film properties were investigated. All of the organic-inorganic hybrid coatings showed improved transmittance of over 90 %. The surface hardness of all coating films on the PMMA substrate was measured to be 4H or higher and the average thickness of the coating films was measured to be about 500 nm. Notably, the TEOS/DTMS coating film showed excellent hydrophobic properties, of about 97°.

• Corrosion Science and Technology
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• 제14권2호
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• pp.64-75
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• 2015

Single $TiO_2$ coating prepared by sol-gel process usually experiences cracks in coating layer. In order to prevent cracks, an inorganic-organic hybrid $TiO_2-SiO_2$ coating was synthesized by combining precursors with an organic functional group. Five different coatings with various ratios of (1:8, 1:4, 1:1, 1:0.25 and 1:0.125) titanium alkoxide (TBOT, Tetrabutylorthotitanate) to organo-alkoxysilane (MAPTS, ${\gamma}$-Methacryloxy propyltrimethoxysilane) on carbon steel substrate were made by sol-gel dip coating. The prepared coatings were analyzed to study the coating properties (surface crack, thickness, composition) by scanning electron microscope (SEM), focused ion beam (FIB), and Fourier transform infrared spectroscopy (FT-IR). Potentiodynamic polarization tests and electrochemical impedance spectroscopy (EIS) were also performed to evaluate the corrosion characteristics of the coatings. Crack free $TiO_2-SiO_2$ hybrid coatings were prepared with the optimization of the ratio of TBOT to MAPTS. The corrosion rates were significantly decreased in the coatings for the optimized precursor ratio without cracks.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.190-193
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• 2002

The processing technology of organic thin-film transistors (Ons) performances have improved fur the last decade. Gate insulator layer has generally used inorganic layer, such as silicon oxide which has properties of a low electrical conductivity and a high breakdown field. However, inorganic insulating layers, which are formed at high temperature, may affect other layers termed on a substrate through preceding processes. On the other hand, organic insulating layers, which are formed at low temperature, dose not affect pre-process. Known wet-processing methods for fabricating organic insulating layers include a spin coating, dipping and Langmuir-Blodgett film processes. In this paper, we propose the new dry-processing method of organic gate dielectric film in field-effect transistors. Vapor deposition polymerization (VDP) that is mainly used to the conducting polymers is introduced to form the gate dielectric. This method is appropriate to mass production in various end-user applications, for example, flat panel displays, because it has the advantages of shadow mask patterning and in-situ dry process with flexible low-cost large area displays. Also we fabricated four by four active pixels with all-organic thin-film transistors and phosphorescent organic light emitting devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.973-976
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• 2006

In this paper, the inorganic multi-layer encapsulation of thin film was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, Sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Ethylene Terephthalate(PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the water vapor transmission rate (WVTR) for PET can be reduced from level of $0.57g/m^2/day$ (bare substrate) to $1^{\ast}10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicate that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.