• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.413-418
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• 2006

Highly stable thin-film transistor (TFT) pixel employing both low temperature polycrystalline silicon (LTPS) and amorphous silicon (a-Si) for active matrix organic light emitting diode (AMOLED) is discussed. ELA (excimer laser annealing) LTPS-TFT pixel should compensate $I_{OLED}$ variation caused by the non-uniformity of LTPS-TFT due to the fluctuation of excimer laser energy and amorphous silicon TFT pixel is desired to suppress the decrease of $I_{OLED}$ induced by the degradation of a-Si TFT. We discuss various compensation schemes of both LTPS and a-Si TFT employing the voltage and the current programming.

• Clean Technology
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• v.30 no.1
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• pp.13-22
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• 2024

In this study, blended 6,13-Bis(triisopropylsilylethynyl)pentacene (TP):2-Decyl-7-phenyl[1]benzothieno[3,2-b][1] benzothiophene (BT):Poly styrene (PS) TFT at different ratios were explored for their potential application as light absorption sensors. Due to the mixing of BT, both off current reduction and on/off ratio improvement were achieved at the same time. In particular, the TP:BT:PS (1:0.25:1 w/w) sample showed excellent light absorption characteristics, which proved that it is possible to manufacture a high-performance light absorption device. Through analysis of the crystal structure and electrical properties of the various mixing ratios, it was confirmed that the TP:BT:PS (1:0.25:1 w/w) sample was optimal. The results of this study outline the expected effects of this innovation not only for the development of light absorption devices but also for the development of mixed organic semiconductor (OSC) optoelectronic systems. Through this study, the potential to create a multipurpose platform that overcomes the limitations of using a single OSC and the potential to fabricate a high-performance OSC TFT with a fine-tuned optical response were confirmed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.601-604
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• 2006

We have developed ZnO TFT array using conventional photolithography and wet etching processes. Transparent 20 nm of ultra thin ZnO film deposited by means of plasma enhanced atomic layer deposition at $100^{\circ}C$ was used for the active channel. The ZnO TFT has a mobility of $0.59cm^2/V.s$, a threshold voltage of 7.2V, sub-threshold swing of 0.64V/dec., and an on/off ratio of $10^8$.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.44-47
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• 2000

본 연구는 α-Si:H TFT(Amorphous Silicon Thin Film Transistor)를 대체 할 펜타센을 활성층으로 사용하는 박막 트랜지스터를 제작에 관한 것이다. 유기 박막 트랜지스터는 유기발광소자와 함께 유연한 디스플레이에 응용된다. 펜타센 박막 트랜지스터의 제작은 채널 길이 25㎛, 70㎛, 소스, 드레인, 게이트 전극으로 Au을 lift off 공정으로 제작하였으며, 펜타센은 OMBD(Organic Molecular Beam Deposition)로 기판온도를 80℃로 유지하여 증착하였다. 제작된 소자로부터 트랜지스터 전류-전압 특성곡선을 측정하였고, 게이트에 의한 채널의 전도도가 조절됨을 확인하였다. 그리고, 전달특성곡선으로부터 문턱전압과 전계효과 이동도를 추출하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.1038-1039
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• 2004

We developed a new photoresist which was composed of polyaniline, uv-curing agent, N-methyl-2- pyrrolidine (NMP) and N-Butyl alcohol (BuOH) as solution. The photoresist is characterized by the capability of being developed in water. We successfully patterned pentacene thin film, which was vulnerable to organic solvent and thus could not be patterned by the conventional photolithography process, with the water soluble photoresist and the minimum feature size was found to be 2um.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.594-600
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• 2014

A threshold voltage compensation pixel circuit was developed for active-matrix organic light emitting diodes (AMOLEDs) using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO-TFTs). Oxide TFTs are n-channel TFTs; therefore, we developed a circuit for the n-channel TFT characteristics. The proposed pixel circuit was verified and proved by circuit analysis and circuit simulations. The proposed circuit was able to compensate for the threshold voltage variations of the drive TFT in AMOLEDs. The error rate of the OLED current for a threshold voltage change of 3 V was as low as 1.5%.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

• Journal of the Korean Applied Science and Technology
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• v.19 no.4
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• pp.335-338
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• 2002

A new process for polymeric gate insulator in field-effect transistors was proposed. Fourier transform infrared absorption spectra were measured in order to identify ODPA-ODA polyimide. Its breakdown field and electrical conductivity were measured. All-organic thin-film transistors with a stacked-inverted top-contact structure were fabricated to demonstrate that thermally evaporated polyimide films could be used as a gate insulator. As a result, the transistor performances with evaporated polyimide was similar with spin-coated polyimide. It seems that the mass-productive in-situ solution-free processes for all-organic thin-film transistors are possible by using the proposed method without vacuum breaking.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1216-1219
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• 2007

We have been developing printed organic TFTs for flexible displays. In this study, we have pay attention to the operation stability improvement of the organic TFTs, and studied several factors especially depending on the dielectric layers. From the detailed analysis of the effects of dielectric layers, we have proposed a new printed dielectric layer which is mainly consisting of metal oxide and gives high operation stability

• Electrical & Electronic Materials
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• v.17 no.7
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• pp.21-29
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• 2004

절연성 기판 위에 단결정이 아닌 반도체 박막을 이용하여 만든 전계효과 (Field Effect FET) 소자로 일반적으로 정의되는 박막 트랜지스터 (Thin Film Transistor, TFT)는 1962 RCA lab.의 Weimer에 제안되어 지금까지 많은 발전을 거듭해 왔다. ［1］ TFT는 SRAM이나 ROM에도 응용되지만, 주된 사용 분야는 능동구동방식 평판 디스플레이(Active Matrix Flat Panel Display)의 화소 스위칭 소자이다. 액정 디스플레이(Liquid Crystal Display, LCD)나 유기 전계발광 디스플레이(Organic Electro-luminescence Display, OELD) 화소의 스위칭 소자로도 TFT가 널리 사용되고 있다. (중략)