• Journal of Pharmaceutical Investigation
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• v.27 no.3
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• pp.233-239
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• 1997

Glibenclamide is a second generation sulfonylurea that is orally active as a hypoglycemic drug. It exists as a crystalline powder which is sparingly soluble in water. It was investigated that the potential of glibenclamide to exhibit polymorphism. Three polymorphic modifications (form 1, form 2 and form 3) and three pseudopolymorphic modifications (form 4, form 5 and form 6) were obtained by crystallization from different organic solvents. The isolated crystal forms were characterized by differential scanning calorimetry(DSC), thermogravimetric analysis(TGA) and X-ray crystallography powder diffraction studies. Form 1 was the most stable and melt at $175.4^{\circ}C$. Form 2 was metastable and melt at $151.0^{\circ}C$. Form 3 was a new polymorphic modification because it was different from form 1 and form 2 in X-ray crystallography powder diffraction data. Form 4 was a 1 : 7(toluene : glibenclamide) toluene solvate; form 5 was a 1 : 5(toluene : glibenclamide) toluene solvate; form 6 was a 3 : 8(pentanol : glibenclamide) pentanol solvate. All forms were stable in 3-month storage under 0% or 100% humidity condition. The dissolution rate of form 4 was highest; those of form 2, form 3, form 1, form 5 and form 6 followed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.448-448
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. However, Indium tin oxide(ITO) thin film for electrode of OLED shows a low electrical properties and is impossible to deposit at high thermal condition because electrical characteristics of ITO is getting worse. One of the ways to realize an improved flexible OLED is to use high internal efficiency electrodes, which have higher work function than those single layer of ITO films of the same thickness. The high internal efficiency electrodes film is developed with structure of nickel oxide for bottom Emission Type of OLED.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.449-449
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• 2007

OLED has many advantages of low voltage operation, self radiation, light weight, thin thickness, wide view angle and fast response time to overcome existing liquid crystal display (LCD)'s weakness. Therefore, It draws attention as promising display and has already developed for manufactured goods. Also, OLED is regarded as a only substitute of flexible display with a thin display. A considerable portion of the light originating film emissive centers buried in a solid film never escapes due to internal reflection at the air-film interface and is scattered as edge emission or dissipated within the solid film This is one of the major reasons why the luminous power efficiency of OLED remains low, in spite of research progress in OLED. Although several ways of overcoming this difficulty have been reported, no comprehensive method has been proposed yet. In this paper, we propose that use of anti-reflective coating layers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.413-413
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• 2007

In recent years, flexible display devices such as liquid crystal display (LCD), organic light emitting diode (OLED), etc. have attracted considerable interest in a wide variety of applications. Polymer substrate is absolutely necessary to realize this kind of flexible display devices. Using the polymer as a substrate, there are lots of advantages including not only mechanical flexibility such as rolling and bending characteristics but also light weights, low cost and so on. In detail, thickness and weights is only one forth and one second of glass substrate, respectively. However, it needs low temperature below $150^{\circ}C$ in the fabrication process comparing to conventional deposition process. The polymer substrate is not thermally stable as much as the glass substrate so that some deformation can be occurred according to variation of temperature. In particular, performance of devices can be easily deteriorated by shrinkage of substrate when heating it. In this paper, pre-annealing and deposition of buffer layer was introduced and studied to solve previously mentioned problems of the shrinkage and followed shear stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.270-271
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• 2005

A high Tc superconducting with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_Y$ was prepared by the citarte method. The solid precursor produced by the dehydration of the gel at $120^{\circ}C$ for 12h is not in the amorphous state as expected but in a crystalline state. X-ray diffraction peaks of nearly the same angular position as the peaks of high Tc phase were observed in the precursor. After pyrolysis at $400^{\circ}C$ and calcination at $840^{\circ}C$ for 4h, the (001)peak of the high Tc phase was cleary observed. Experimental results suggest that the intermediate phase formed before the formation of the superconducting phase may be the most important factro in determining whether it is easy to form the high Tc phase or not. because the nucleation barriers of the two superconducting phase may be altered by the variation of the crystal structures of those intermediate phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.176.1-176.1
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• 2013

TCO (Transparent Conductive Oxide)는 투명 전도성 산화물 높은 투과율과 낮은 비저항 가지고 있어서 최근 사용된 평판디스플레이 LCD(liquid crystal display), PDP (Plasma Display Panel), OLED (Organic Light Emitting Display) 에 많이 사용되고 있다. 현재 양산화 되고 있는 ITO (Indium tin Oxide)는 좋은 전도율과 높은 투과율로서 가장 많이 쓰인다. 하지만 ITO중에 Indium Oxide는 치명적인 독성을 가지고 있으며 In의 저장량이 적어 시간이 갈수록 가격이 비싸지는 등 여러 가지 단점을 가지고 있다. 그것에 비해 AZO (aluminum-doped zinc oxide)는 독성이 없고 가격도 저렴하여 ITO의 단점을 보완 할 수 있는 물질이다. AZO 증착은 현재 sol-gel, CVD(chemical vapor deposition), Sputter, 등으로 사용되고 있으며 현재 많은 연구가 진행되고 있다. 본 실험에서는 PEN 기판을 사용하였으며, 플라즈마의 열적 데미지로 인한 기판의 변형 등 여러 가지 문제를 해결하기 위하여 박막의 열적 변형이 적고, 고밀도 플라즈마로 양질의 박막 증착이 가능한 FTS (Facing Target Sputtering)방법을 사용하여 AZO박막을 증착시키고 구조적, 전기적, 광학적인 특성을 평가 하였다. 측정 분석 결과 AZO는 가시광 영역에 높은 투과율이 요구되는 Flexible display 표시장치와 OLED, PDP, 유기태양전지 등 많은 영역에 사용이 가능 할 것이라 사료된다.

• Journal of the Korean Applied Science and Technology
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• v.25 no.2
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• pp.130-136
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• 2008

$xTiO_2$-$ySiO_2$ system photocatalysts were developed by sol-gel method based on the change of production parameters, and their structure of crystallization and the specific surface area were measured. Considering the efficiency of the ethanol and phenol degradation using the catalyst, the conclusions were obtained as follows: By means of X-ray analysis of $xTiO_2$-$ySiO_2$ powder that is obtained from Titanium and Silicon alkoxide by sol-gel process, it is shown that crystal structure of anatase type is a dominating structure and, on the other hand, the structure of rutile also partly exists. The increase of $SiO_2$ contents causes the decrease of the degree of crystallization of the gel, whereas the specific surface area preferentially increases. It is shown that more than 90% of ethanol and phenol are degraded when reaction time is about three and an hours, and the maximum degradation rate of ethanol and phenol is shown in $60TiO_2$-$40SiO_2$ catalyst.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.9
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• pp.84-89
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• 2021

Indium tin oxide (ITO) transparent electrodes, which are used to manufacture organic light-emitting diodes, are used in light-emitting surface electrodes of display EL panels such as cell phones and TVs, liquid crystal panels, transparent switches, and plane heating elements. ITO is a major component that consists of indium and tin and is advantageous in terms of obtaining sheet resistance and light transmittance in a thin film. However, the optical performance of devices decreases with an increase in its thickness. A digital holography system was constructed and measured for the step measurement of the ITO thin film, and the reliability of the technique was verified by comparing the FE-SEM measurement results. The error rate of the step difference measurement was within ±5%. This result demonstrated that this technique is useful for applications in advanced MEMS and NEMS industrial fields.

• Journal of Fashion Business
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• v.25 no.4
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• pp.125-140
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• 2021

Recently, flexible displays have been used as part of fashion beyond the concept of parts for electronic products. The flexible display applied to wearable fashion products flexibly bends according to the wearing position of the human body and, at the same time, decorates the fashion product more splendidly through the screen on which images or videos are displayed. Flexible displays, which are used for clothes and accessories, combine analogue fashion sensibility with digital screens to create a new level of convergence product design and expand the range of fashion design and fashion materials. This study aims to analyze the trends of the development and commercialization of fashion products that use flexible displays. As a research method, theoretical research and empirical research through case analysis were conducted in parallel. First, as a theoretical study, the morphological and technical characteristics of flexible displays were examined. Through theoretical studies, the effect of the characteristics of flexible displays on the development of wearable fashion products was investigated. Second, as an empirical case study, the design of wearable fashion products using flexible displays over the past 10 years and the characteristics of the displays used in the products were analyzed. Based on the characteristics analyzed, the product design, display and product integration methods and the commercialization stages of wearable fashion products using flexible displays were analyzed.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.