• Korean Journal of Crystallography
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• v.12 no.3
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• pp.171-176
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• 2001

HgCdTe films were grown on the (100). (111), (211) CdZnTe, and (100) GaAs substrates by metal organic chemical vapor epitaxy. We have investigated the surface morphology, electrical properties, crystalline qualities, and composition of HgCdTe with substrates orientation. Three dimensional facet growth was occurred on (111) CdZnTe substrate. The crystalline quality of HgCdTe on (100) CdZnTe was superior to that of HgCdTe on (100) GaAs. FWHM values of double crystal x-ray diffraction of HgCdTe on (100) CdZnTe and (100) GaAs were 55 and 125arcsec, respectively. HgCdTe on GaAs substrate showed n-type conductivity with high mobility, however, HgCdTe on CdZnTe showed p-type conductivity with carrier concentration of higher than 10/sup 16/㎤.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.376-386
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• 2014

Zinc oxysulfide nanocrystals (ZnOS NCs) were synthesized by forming ZnS phase on a ZnO matrix. ZnO nanocrystals (NCs) with a diameter of 10 nm were synthesized by forced hydrolysis in an organic solvent. As-synthesized ZnO NCs aggregated with each other due to the high surface energy. As acetic acid (AA) was added into the milky suspension of the aggregated ZnO NCs, transparent solution of well dispersed ZnO NCs formed. Finally ZnOS NCs were formed by adding thioacetic acid (TAA) to the transparent solution. The effect of recrystallization on the structural, optical and electrical properties of the ZnOS NCs were studied. The results of UV-vis absorption confirmed the band gap tunability caused by increasing the curing temperature of ZnOS thin films. This may have originated from the larger effective size due to the recrystallization of zinc sulfide (ZnS). From XRD result we identified that ZnOS thin films have a zinc blende crystal structure of ZnS without wurtzite ZnO structure. This is probably due to the small amount of ZnO phases. These assertions were verified through EDS of FE-SEM, XPS and EDS mapping of HR-TEM results; we clearly proved that ZnOS were comprised of ZnS and ZnO phases.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.1-19.1
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• 2010

The process of manufacturing printed electronics using printing technology is attracting attention because its process cost is lower than that of the conventional semiconductor process. This technology, which offers both a lower cost and higher productivity, can be applied in the production of organic TFT (thin film transistor), solar cell, RFID(radio frequency identification) tag, printed battery, E-paper, touch screen panel, black matrix for LCD(liquid crystal display), flexible display, and so forth. In general, in order to implement printed electronics, narrow width and gap printing, registration of multi-layer printing by several printing units, and printing accuracy of under $20\;{\mu}m$ are all required. These electronic products require high precision to the degree of tens of microns - in a large area with flexible material, and mass productivity at low cost. As such, the roll-to-roll printing process is attracting attention as a mass production system for these printed electronic devices. For the commercialization of this process, two basic electronic ink technologies, such as conductive ink and polymers, and printing equipment have to be developed. Therefore, this paper addressed basis design and test to develop fine patterning equipment employing the roll-to-roll printing equipment and electronic ink.

• Journal of Powder Materials
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• v.24 no.6
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• pp.483-488
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• 2017

Transition-metal oxide semiconductors have various band gaps. Therefore, many studies have been conducted in various application fields. Among these, methods for the adsorption of organic dyes and utilization of photocatalytic properties have been developed using various metal oxides. In this study, the adsorption and photocatalytic effects of $WO_3$ nanomaterials prepared by hydrothermal synthesis are investigated, with citric acid added in the hydrothermal process as a structure-directing agent. The nanostructures of $WO_3$ are studied using transmission electron microscopy and scanning electron microscopy images. The crystal structure is investigated using X-ray diffraction patterns, and the changes in the dye concentrations adsorbed on $WO_3$ nanorods are measured with a UV-visible absorption spectrophotometer based on Beer-Lambert's law. The methylene blue (MB) dye solution is subjected to acid or base conditions to monitor the change in the maximum adsorption amount in relation to the pH. The maximum adsorption capacity is observed at pH 3. In addition to the dye adsorption, UV irradiation is carried out to investigate the decomposition of the MB dye as a result of photocatalytic effects. Significant photocatalytic properties are observed and compared with the adsorption effects for dye removal.

• Laser Solutions
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• v.13 no.1
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• pp.11-15
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• 2010

Indium tin oxide (ITO) provides high electrical conductivity and transparency in the visible and near IR (infrared) wavelengths. Thus, it is widely used as a transparent electrode for the fabrication of liquid crystal displays (LCDs) and organic light emitting diode displays (OLRDs), photovoltaic devices, and other optical applications. Lasers have been used for removing coating on polymer substrate for flexible display and electronic industry. In selective removal of ITO layer, laser wavelength, pulse energy, scan speed, and the repetition rate of pulses determine conditions, which are efficient for removal of ITO coating without affecting properties of the polymer substrate. ITO coating removal with a laser is more environmentally friendly than other conventional etching methods. In this paper, pattering of ITO film from polymer substrates is described. The Yb:KGW femtosecond laser processing system with a pulse duration of 250fs, a wavelength of 1030nm and a repetition rate of 100kHz was used for removing ITO coating in air. We can remove the ITO coating using a scanner system with various pulse energies and scan speeds. We observed that the amount of debris is minimal through an optical and a confocal microscope, and femtosecond laser pulses with 1030nm wavelength are effective to remove ITO coating without the polymer substrate ablation.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.02a
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• pp.129-132
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• 2003

Yttria stabilized zirconia (YSZ) buffer layers were deposited by a metal organic chemical vapor deposition (MOCVD) technique using single liquid source for the application of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) coated conductor. Y:Zr mole ratio was 0.2:0.8, and tetrahydrofuran (THF) was used as a solvent. The (100) single crystal MgO substrate was used for searching deposition condition. Bi-axially oriented CeO$_2$ and NiO films were fabricated on {100}〈001〉 Ni substrate by the same method and used as templates. At a constant working pressure of 10 Torr, the deposition temperatures (660~80$0^{\circ}C$) and oxygen flow rates (100~500 sccm) were changed to find the optimum deposition condition. The best (100) oriented YSZ film on MgO was obtained at 74$0^{\circ}C$ and $O_2$ flow rate of 300 sccm. For YSZ buffer layer with this deposition condition on CeO$_2$/Ni template, full width half maximum (FWHM) values of the in-plane and out-of-plane alignments were 10.6$^{\circ}$ and 9.8$^{\circ}$, respectively. The SEM image of YSZ film on CeO$_2$/Ni showed surface morphologies without microcrack.k.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.59.1-59.1
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• 2012

Organic thin-film transistors (OTFTs) with printable semiconductors are promising candidate devices for flexible active-matrix (AM) display applications. Yet, stable operation of actual display panels driven by OTFTs has seldom been reported up to date. Here, we demonstrate a flexible reflective type polymer dispersed liquid crystal (PDLC) display, in which inkjet-printed OTFT arrays are used as driving elements with excellent areal uniformity in terms of device performance. As the active semiconductor, a novel, ambient processable conjugated copolymer was synthesized. The stability of the devices with respect to electrical bias stress was improved by applying a channel-passivation layer, which suppresses the environmental effects and hence reduces the density of trap states at the channel/dielectric interface. The combination of high performance and high stability OTFT devices enabled the successful realization of stable operating flexible color-displays by inkjet-printing.

• Bulletin of the Korean Chemical Society
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• v.23 no.4
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• pp.580-586
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• 2002

We investigated the effect of ionic component on crystalline morphology development during isothermal annealing in a sodium neutralized sulfonated poly(ethylene terephthalate) ionomer (Ion-PET) by time-resolved small-angle x-ray scattering (TR-SAX S) using synchrotron radiation. At early stage in Ion-PET, SAXS intensity at a low annealing temperature (Ta = 120 $^{\circ}C)$ decreased monotonously with scattering angle for a while. Then SAXS profile showed a peak and the peak position progressively moved to wider angles with isothermal annealing time. Finally, the peak intensity decreased, shifting the peak angle to wider angle. It is revealed that ionic aggregates (multiplets structure) of several nm, calculated by Debye-Bueche plot, are formed at early stage. They seem to accelerate the crystallization rate and make fine crystallites without spherulite formation (supported by optical microscopy observation). From decrease of peak intensity in SAXS,it is suggested that new lamellae are inserted between the preformed lamellae so that the concentration of ionic multiplets in amorphous region decreases to lower the electron density difference between lamellar crystal and amorphous region. In addition, analysis on the annealing at a high temperature (Ta = 210 $^{\circ}C)$ by optical microscopy, light scattering and transmission electron microscopy shows a formation of spherulite, no ionic aggregates, the retarded crystallization rate and a high level of lamellar orientation.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.4
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• pp.431-438
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• 2005

In order to apply the photocatalytic decomposition of aromatic VOCs, adsorbent prepared from MSWI fly ash was coated by $TiO_2$ solution to endow with photo-catalytic function. The effects of coating number, existence of light source and the type of $TiO_2$ solution used for coating were examined. Adsorbent coated with amorphous $TiO_2$ solution showed higher adsorptivity than adsorbent coated with crystal $TiO_2$ solution. Without light source, breakthrough curve of photo -catalyst absorbent for VOCs removal was similar to that of absorbent made from MSWI fly ash. On the other hand, breakthrough time was enlarged with light source and total removal efficiency of benzene and toluene was also increased. It can be explained as photo-decomposition effect of $TiO_2$ photo-catalyst. Total removal efficiency of benzene and toluene was increased according to the increase of coating number with light source. It was due to the effect of adsorption and photo reaction of photo-catalytic adsorbent. But total removal efficiency of benzene was lower than that of toluene. Because benzene was removed more effectively than toluene by adsorption, but photo - decomposition effect oi toluene was more high than benzene.

• Journal of Applied Biological Chemistry
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• v.42 no.3
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• pp.146-150
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• 1999

As a part of the integrated disease system in greenhouse, an antifungal fungus(AF1) was isolated from greenhouse soil. It exhibited strong inhibitory activites against Pythium ultimum, Phytophtora capsici, Rhizoctonia solani, Botrytis cinerea, and Fusarium oxysporum based on dual culture on 1/5 strength of potato dextrose agar between antagonistic fungus and several plant pathogens. The antagonistic fungus was identified as Chaetomium cochliodes, based on morphological characteristics; the body of the perithecium bears straight or slightly wavy, unbranched hairs, whilst the apex bears a group of spirally coiled hairs. To investigate antagonistic principles, antifungal compound was extracted and fractionated by different solvent systems. An antifungal compound was isolated as pure crystal from is culture filtrate using organic solvent extraction and column chromatography, followed by preparative thin layer chromatography. The chemical structure of the purified antifungal compound was identified as chaetoglobosin A based on the data obtained form $^1H-NMR$, $^{13}C-NMR$, DEPT 90, 135, $^1H-^1H$ COSY, $^1H-^{13}C$ COSY and EI/MS. $ED_{50}$ values of the chaetoglobosin A against P. ultimum, P. capsici, R. solani, B. cinerea and F. oxysporum were 1.98, 4.01, 4.16, 2.67 and 35.14 ppm, respectively.