• Title/Summary/Keyword: Order memory

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Cell Characteristics of a Multiple Alloy Nano-Dots Memory Structure

  • Kil, Gyu-Hyun;Lee, Gae-Hun;An, Ho-Joong;Song, Yun-Heup
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.240-240
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    • 2010
  • A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

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Design of Zero-Layer FTP Memory IP (PMIC용 Zero Layer FTP Memory IP 설계)

  • Ha, Yoongyu;Jin, Hongzhou;Ha, Panbong;Kim, Younghee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.11 no.6
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    • pp.742-750
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    • 2018
  • In this paper, in order to enable zero-layer FTP cell using only 5V MOS devices on the basis of $0.13{\mu}m$ BCD process, the tunnel oxide thickness is used as the gate oxide thickness of $125{\AA}$ of the 5V MOS device at 82A. The HDNW layer, which is the default in the BCD process, is used. Thus, the proposed zero layer FTP cell does not require the addition of tunnel oxide and DNW mask. Also, from the viewpoint of memory IP design, a single memory structure which is used only for trimming analog circuit of PMIC chip is used instead of the dual memory structure dividing into designer memory area and user memory area. The start-up circuit of the BGR (Bandgap Reference Voltage) generator circuit is designed to operate in the voltage range of 1.8V to 5.5V. On the other hand, when the 64-bit FTP memory IP is powered on, the internal read signal is designed to maintain the initial read data at 00H. The layout size of the 64-bit FTP IP designed using the $0.13-{\mu}m$ Magnachip process .is $485.21{\mu}m{\times}440.665{\mu}m$($=0.214mm^2$).

Relationships between Memory Belief, Depression and Cognitive Functioning for Stroke Patients (뇌졸중환자의 기억신념과 우울, 인지기능과의 관계)

  • Park, Gyeong A;Oh, Myung Hwa;Kim, Da Hye
    • 재활복지
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    • v.21 no.3
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    • pp.209-226
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    • 2017
  • The purpose of this study was to investigate the relationships between memory belief, depression and cognitive functioning for stroke patients. A total of 88 subjects were participated in this study and the questionnaire was composed with general characteristics and K-MoCA, Beck Depression Inventory(BDI), Memory Self Efficacy Qestionnaire(MSEQ), Memory Controllability Inventory(MCI). The results showed that, for the memory self efficacy by general characteristics, there were significant differences in terms of level of education, living and economic status, the number of onset of stroke (p<.05), the memory controllability showed significant differences in economic status (p<.05), and the depression showed significant differences in onset duration of stroke (p<.05), and the cognitive functioning showed significant differences in gender, age, education, living condition, and the number of onset of stroke (p<.05). In addition, there was a significant correlation between memory self efficacy and memory controllability, depression, and cognitive functioning (p<.05). Memory controllability was correlated with depression (p<.01), depression was correlated with cognitive functioning (p<.01). Memory self efficacy, memory controllability and depression were found to be factors, affecting the cognitive functioning (p<.05). Based on this results, it is recommended to develop a multifaceted rehabilitation program in order to induce the positive mood, to reduce the negative emotions such as depression and to promote the memory belief about recovery of cognitive functioning.

A Study on the Implementation of Digital Filters with Reduced Memory Space and Dual Impulse Response Types (기억용량 절약과 순회방식 선택이 가능한 디지털 필터의 구성에 관한 연구)

  • Park, In Jung;Rhee, Tae Won
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.950-956
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    • 1986
  • In this paper, a direct addressing mode of a microprocessor is introduced to save memory capacity, and also a dedicated digital filter is constructed to speed up the filter processing and to enable an easy selection of the impulse response types. A theoretical analysis has been conducted on the errors caused by the finite word klength, rounding-off and multiplication procedures. The digital filter designed by the proposed method is made into a module which can function as a 7th-order recursive or a 14-order nonrecursive type with a simples witch operation. The proposed filter is implemented on a printed-circuit board. The frequency characteristics of this filter can be controlled by the multiplication values stored in ROMs. A low-pass, a high-pass and a band-pass filter have been designed and their frequency characteristics are verified by actual measurements. For a order higher filer, two filter modules have been cascaded into an integrated filter of 23rd-order non-recursive low-pass type and a 12th-order recursive multiband type. Their frequency characteirstics have been found to agree with the theory.

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Comparison of Circuit Reduction Techniques for Power Network Noise Analysis

  • Kim, Jin-Wook;Kim, Young-Hwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.9 no.4
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    • pp.216-224
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    • 2009
  • The endless scaling down of the semiconductor process made the impact of the power network noise on the performance of the state-of-the-art chip a serious design problem. This paper compares the performances of two popular circuit reduction approaches used to improve the efficiency of power network noise analysis: moment matching-based model order reduction (MOR) and node elimination-based MOR. As the benchmarks, we chose PRIMA and R2Power as the matching-based MOR and the node elimination-based MOR. Experimental results indicate that the accuracy, efficiency, and memory requirement of both methods very strongly depend on the structure of the given circuit, i.e., numbers of the nodes and sources, and the number of moments to preserve for PRIMA. PRIMA has higher accuracy in general, while the error of R2Power is also in the acceptable range. On the other hand, PRIMA has the higher efficiency than R2Power, only when the numbers of nodes and sources are small enough. Otherwise, R2Power clearly outperforms PRIMA in efficiency. In the memory requirement, the memory size of PRIMA increases very quickly as the numbers of nodes, sources, and preserved moments increase.

Bending and buckling analysis of sandwich Reddy beam considering shape memory alloy wires and porosity resting on Vlasov's foundation

  • Bamdad, Mostafa;Mohammadimehr, Mehdi;Alambeigi, Kazem
    • Steel and Composite Structures
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    • v.36 no.6
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    • pp.671-687
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    • 2020
  • The aim of this research is to analyze buckling and bending behavior of a sandwich Reddy beam with porous core and composite face sheets reinforced by boron nitride nanotubes (BNNTs) and shape memory alloy (SMA) wires resting on Vlasov's foundation. To this end, first, displacement field's equations are written based on the higher-order shear deformation theory (HSDT). And also, to model the SMA wire properties, constitutive equation of Brinson is used. Then, by utilizing the principle of minimum potential energy, the governing equations are derived and also, Navier's analytical solution is applied to solve the governing equations of the sandwich beam. The effect of some important parameters such as SMA temperature, the volume fraction of SMA, the coefficient of porosity, different patterns of BNNTs and porous distributions on the behavior of buckling and bending of the sandwich beam are investigated. The obtained results show that when SMA wires are in martensite phase, the maximum deflection of the sandwich beam decreases and the critical buckling load increases significantly. Furthermore, the porosity coefficient plays an important role in the maximum deflection and the critical buckling load. It is concluded that increasing porosity coefficient, regardless of porous distribution, leads to an increase in the critical buckling load and a decrease in the maximum deflection of the sandwich beam.

SMA(SHAPE MEMORY ALLOY) ACTUATOR USING FORCED CONVECTION (강제 대류를 이용한 형상기억합금 작동기)

  • Jun Hyoung Yoll;Kim Jung-Hoon;Park Eung Sik
    • Journal of computational fluids engineering
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    • v.10 no.2
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    • pp.48-53
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    • 2005
  • This work discusses the numerical analysis, the design and experimental test of the SMA actuator along with its capabilities and limitations. Convective heating and cooling using water actuate the SMA(Shape memory alloy) element of the actuator. The fuel such as propane, having a high energy density, is used as the energy source for the SMA actuator in order to increase power and energy density of the system, and thus in order to obviate the need for electrical power supplies such as batteries. The system is composed of a pump, valves, bellows, a heater(burner), control unit and a displacement amplification device. The experimental test of the SMA actuator system results in 150 MPa stress(force : 1560 N) with $3\%$ strain and 0.5 Hz. actuation frequency. The actuation frequency is compared with the prediction obtained from numerical analysis. For the designed SMA actuator system, the results of numerical analysis were utilized in determining design parameters and operating conditions.

Cold Data Identification using Raw Bit Error Rate in Wear Leveling for NAND Flash Memory

  • Hwang, Sang-Ho;Kwak, Jong Wook;Park, Chang-Hyeon
    • Journal of the Korea Society of Computer and Information
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    • v.20 no.12
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    • pp.1-8
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    • 2015
  • Wear leveling techniques have been studied to prolong the lifetime of NAND flash memory. Most of studies have used Program/Erase(P/E) cycles as wear index for wear leveling. Unfortunately, P/E cycles could not predict the real lifetime of NAND flash blocks. Therefore, these algorithms have the limited performance from prolonging the lifetime when applied to the SSD. In order to apply the real lifetime, wear leveling algorithms, which use raw Bit Error Rate(rBER) as wear index, have been studied in recent years. In this paper, we propose CrEWL(Cold data identification using raw Bit error rate in Wear Leveling), which uses rBER as wear index to apply to the real lifetime. The proposed wear leveling reduces an overhead of garbage collections by using HBSQ(Hot Block Sequence Queue) which identifies hot data. In order to reduce overhead of wear leveling, CrEWL does not perform wear leveling until rBER of the some blocks reaches a threshold value. We evaluate CrEWL in comparison with the previous studies under the traces having the different Hot/Cold rate, and the experimental results show that our wear leveling technique can reduce the overhead up to 41% and prolong the lifetime up to 72% compared with previous wear leveling techniques.

An Improving Method of Restructuring Parallel Programs for Data Race Detection

  • Ha, Keum-Sook;Lee, Sung woo;Yoo, Kee-Young
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.715-718
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    • 2000
  • Although shared memory parallel programs are designed to be deterministic both in their final results and intermediate states, the races that occur when different processes access a common memory location in an order not guaranteed by synchronization could result in unintended non-deterministic executions of the program. So, Detecting races, particularly first data races, is important for debugging explicit shared memory parallel programs. It is possible that all data races reported by other on-the-fly algorithms would disappear once the first races were removed. To detect races parallel programs with nested loops and inter-thread coordination, it must guarantee the order of synchronization operations in an execution instance. In this paper, we propose an improved restructuring method that guarantee ordering execution instance and preserve the semantics of original program. This method requires O(np) time and (s + up) space, where n is the number of total operations, s is the number of synchronization operations and p is the number of parallelism in the execution. Also, this method makes on-the-fly detection of parallel program with nested loops and inter-thread coordination more easily in space and time complexity.

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Characterization of Spironaphthooxazine Derivative Thin Films for Optical Memory

  • Kang, Young-Soo;An, Sang-Do;Jang, Ju-Seog;Kim, Byung-Kyu;Kim, Yong-Joo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.11C no.3
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    • pp.49-52
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    • 2001
  • The derivatives of spironaphthooxazine gause photoisomerization when they are illuminate with UV light. We investigated the photoisomerization of spironaphthooxazine derivatives for holographic memory. Langmuir-Blodgett (LB) films contain amphiphile spironaphthooxazine derivatives which can be applied in molecular devices by a change of molecular level energy and a refractive index. In order to investigate the photoisomerization of spironaphthooxazine derivatives at the air/water energy and a refractive index. In order to investigate the photoisomerization of spironaphthooxazine derivatives at the air/water interfaces, spironaphthooxazine derivatives with side alkyl chains were synthesized. The films of the spironaphthooxazine derivatives were characterized by the measurement of UV/vis spectroscopy, Brewster Angle Microscopy (BAM) and Atomic Force Microscopy (AFM). The monolayers of the spironaphthooxazine derivatives mixed with stearic acid were stable at the air/water interface and visualized by the measurement of BAM. The spironaphthooxazine derivative monolayers on the glass surface showed the maximum efficiency of diffraction as 0.99% by the measurement of holography.

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