• 한국재료학회지
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• 제15권7호
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• pp.431-434
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• 2005

To investigate the dependences of the absorption spectrum and electronic structure properties on the ZnO nano-particle size, ZnO nanocrystals were synthesized by a sol-gel method. The absorption onset peak exhibits a systematic blue-shift with decreasing particle size due to the quantum confinement effect, as well as, with decreasing $Zn^{2+}$ concentration. The increase of particle size is mainly controlled by coarsening and aggregation step during the nucleation and growth of ZnO nano-particles. The onset absorption spectrum of ZnO colloids changes from 310 to 355 nm as $Zn^{2+}$ concentration increases from 0.01 to 0.1 mole. The average particle size as a function of aging- time can be determined from the absorption spectra. The freshly prepared nanocrystal size was about 2.8nm.

• 전자통신동향분석
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• 제33권6호
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• pp.81-93
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• 2018

Metamaterials are artificial media that can control the properties of waves at will. Active photonic metadevice technologies cover the device and material technologies that control the visible and IR light through an external signal (mainly an electrical signal). The application areas of active photonic metadevices are tremendous for example holography, active HOE, bio imaging, IR imaging, telecommunication, and optoelectronic devices. In this paper, the technical trends and prospects of active metamaterials, active meta holography, active meta devices, nano-optical telecommunication devices, and IR imaging meta devices are reviewed.

• Current Optics and Photonics
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• 제3권2호
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• pp.172-176
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• 2019

The work reports on the fabrication of an optical planar waveguide in the Nd:CNGG crystal by the 0.4-MeV hydrogen ion implantation with a fluence of $8.0{\times}10^{16}ions/cm^2$. The nuclear energy loss of the implanted hydrogen ions was derived by using SRIM 2013 code. The microscope image of the proton-implanted Nd:CNGG crystal cross section was captured by a metallographic microscope. The transmittance spectra were recorded before and after the ion implantation. The light intensity distribution of the planar waveguide at 632.8 nm was experimentally measured to validate its effect on one dimension confinement. The investigation shows that the proton-implanted Nd:CNGG waveguide is a candidate for an optoelectronic integrated device.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1725-1728
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• 2018

We synthesized the gold nanoparticles (Au NPs)-embedded methylammonium lead iodide ($MAPbI_3$) film for the first time. The effects of metal nanoparticles on $MAPbI_3$ perovskite were systematically studied using UV-Vis absorption and photoluminescence (PL) measurements. As a result, the 20-nm-sized Au NPs-embedded $MAPbI_3$ film exhibited a 4.15% higher absorbance than the bare $MAPbI_3$ film. Moreover, the average PL intensity of the Au NPs-embedded $MAPbI_3$ film increased by about 75.25% over the bare $MAPbI_3$ film. Therefore, we have confirmed that addition of the Au NPs has a positive effect on the optical properties of $MAPbI_3$, and we believe that this study will provide a basic insight into the metal nanoparticles-embedded perovskite thin films for the future optoelectronic applications.

• Journal of the Korean Physical Society
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• 제73권11호
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• pp.1735-1743
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• 2018

Excitons are the most prominent features of the optical properties of monolayer transition-metal dichalcogenides(TMDC). In view of optoelectronics it is very important to understand the decay mechanisms of the excitons of these materials. Auger recombination of excitons are regarded as one of the dominant decay processes. In this paper the Auger constant of recombination is computed based on the approach proposed by Kavoulakis and Baym. We obtain both temperature dependent (from type A, A' processes) and temperature independent (from type B, B' processes) contributions, and a numerical estimate of theoretical result yields the value of constant in the order of $10^{-2}cm^2s^{-1}$, being consistent with existing experimental data. This implies that Auger decay processes severely limit the photoluminescence yield of TMDC-based optoelectronic devices.

• Advances in nano research
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• 제13권5호
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• pp.427-435
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• 2022

Static stability behaviors of annular sandwich plates constructed from two layers of particle-reinforced nanocomposites have been investigated in the present article. The type of nanoscale particles has been considered to be graphene oxide powders (GOPs). The particles are assumed to have uniform and graded dispersions inside the matrix and the material properties have been defined according to Halpin-Tsai micromechanical model. The core layer is assumed to have honeycomb configuration. Annular plate has been formulated according to thin shell assumptions considering geometrical nonlinearities. After solving the governing equations via Galerkin's technique, it is showed that the post-buckling curves of annular sandwich plates rely on the core wall thickness, amount of GOP particles, sector radius, and thickness of layers.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.493-496
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• 2004

Recently, organic thin films are widely used to the application of organic optoelectronic devices such as OLED, OTFT, organic solar cell, and organic laser, etc. The electrical transport of organic thin film is very important to determine the performance and thus should be analyzed for analysis of operation and design of devices. However, there have been rarely known about the electrical transport of organic thin films. As an example pentacene is known to be a good organic semiconductor to produce the best performance in OTFT at the present. But the performance is varied depending on the position of source/drain contacts and gate surface states and the thickness of thin film. Therefore, it is necessary to investigate the effects of the above-mentioned factors on the electrical properties of pentacene thin film.

• 센서학회지
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• 제29권5호
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• pp.328-331
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• 2020

In this study, a highly crystalline SnO₂ thin film was formed using a sol-gel process. In addition, a SnO₂ thin-film transistor was successfully fabricated. The fabricated SnO₂ thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1 cm² V^-1 s^-1, an on/off current ratio of 1.2 × 10⁵, and a subthreshold swing of 2.69. The formed SnO₂ had a larger bandgap (3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 × 10^-6 Jones, gain of 1.43 × 10⁷, detectivity of 2.75 × 10^-6 cm Hz^1/2 W^-1, and photosensitivity of 4.67 × 10².

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.857-860
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• 2003

Tin doped indium oxide(ITO) and Al doped zinc oxide(ZnO:Al) films, which are widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The electrical and optical properties of both the ITO and ZnO:Al thin films were investigated as functions of substrate temperature, working gas pressure and deposition time. ITO and ZnO:Al films with the the present experimental conditions of temperature and pressure showed resistivity of $2.36{\times}10^{-4}{\Omega}-cm,\;9.42{\times}10^{-4}{\Omega}-cm$ and transmittance of 86.28%, 90.88% in the wavelength range of the visible spectrum, respectively.

• ETRI Journal
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• 제21권4호
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• pp.65-82
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• 1999

We present a calculation model for an improved quantitative theoretical analysis of electronic and optical properties of strained-piezoelectric[111] InGaAs/GaAs superlattices (SLs). The model includes a full band-coupling between the four important energy bands: conduction, heavy, light, and spin split-off valence bands. The interactions between these and higher lying bands are treated by the k ${\cdot}$ p perturbation method. The model takes into account the differences in the band and strain parameters of constituent materials of the heterostructures by transforming it into an SL potential in the larger band-gap material region. It self-consistently solves an $8{\times}8$ effective-mass $Schr{\ddot{o}}dinger$ equation and the Hartree and exchange-correlation potential equations through the variational procedure proposed recently by the present first author and applied to calculate optical matrix elements and spontaneous emission rates. The model can be used to further elucidate the recent theoretical results and experimental observations of interesting properties of this type of quantum well and SL structures, including screening of piezoelectric field and its resultant optical nonlinearities for use in optoelectronic devices.