• 한국광학회:학술대회논문집
• /
• 한국광학회 2009년도 동계학술발표회 논문집
• /
• pp.495-496
• /
• 2009

• 한국광학회:학술대회논문집
• /
• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
• /
• pp.107-108
• /
• 2009

• 센서학회지
• /
• 제31권4호
• /
• pp.228-237
• /
• 2022

Two-dimensional (2D) nanomaterials have demonstrated the potential to replace silicon and compound semiconductors that are conventionally used in photodetectors. These materials are ultrathin and have superior electrical and optoelectronic properties as well as mechanical flexibility. Consequently, they are particularly advantageous for fabricating high-performance photodetectors that can be used for wearable device applications and Internet of Things technology. Although prototype photodetectors based on single microflakes of 2D materials have demonstrated excellent photoresponsivity across the entire optical spectrum, their practical applications are limited due to the difficulties in scaling up the synthesis process while maintaining the optoelectronic performance. In this review, we discuss facile methods to mass-produce 2D material-based photodetectors based on the exfoliation of van der Waals crystals into nanosheet dispersions. We first introduce the liquid-phase exfoliation process, which has been widely investigated for the scalable fabrication of photodetectors. Solution processing techniques to assemble 2D nanosheets into thin films and the optoelectronic performance of the fabricated devices are also presented. We conclude by discussing the limitations associated with liquid-phase exfoliation and the recent advances made due to the development of the electrochemical exfoliation process with molecular intercalants.

• Bulletin of the Korean Chemical Society
• /
• 제34권6호
• /
• pp.1779-1782
• /
• 2013

N-type ZnO nanorods were grown on p-type porous silicon using a chemical bath deposition (CBD) method (p-n diode). The structure and geometry of the device were examined by field-emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) while the optoelectronic properties were investigated by UV/Vis absorption spectrometry as well as photoluminescence and electroluminescence measurements. The field emission (FE) properties of the device were also measured and its turn-on field and current at 6 $V/{\mu}m$ were determined. In principle, the growth of ZnO nanorods on porous siicon for optoelectronic applications is possible.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.101.1-101.1
• /
• 2016

Van der Waals (vdW) heterostructures built from two-dimensional layered materials provide an unprecedented opportunity in designing new material systems because the lack of dangling bonds on the vdW surfaces enables the creation of high-quality heterointerfaces without the constraint of atomically precise commensurability. In particular, the ability to build artificial heterostructures, combined with the recent advent of transition metal dichalcogenides, allows the fabrication of unique semiconductor heterostructures in an ultimate thickness limit for fundamental studies as well as novel device applications. In this talk, we will present the characterization of the electronic and optoelectronic properties of atomically thin p-n junctions consisting of vertically stacked WSe2 and MoS2 monolayers. We observed gate-tunable diode-like current rectification and a photovoltaic response across the p-n interface. Unlike conventional bulk p-n junctions, the tunneling-assisted interlayer recombination of the majority carriers is responsible for the tenability of the charge transport and the photovoltaic response. Furthermore, we will discuss the enhanced optoelectronic characteristics in graphene-sandwiched vdW p-n junctions.

• 전기학회논문지
• /
• 제59권1호
• /
• pp.123-126
• /
• 2010

$Cu_2O$ nanoparticles-based films are fabricated by spin-coating on glass substrates and their optoelectronic characteristics are investigated in this study. The $Cu_2O$ films are nearly all-transparent as high as 98% in a wavelength range from 400 nm to 900 nm and three exciton peaks associated with the sublevels in the conduction band are observed at the wavelengths shorter than 400 nm in the absorption spectrum. Under the illumination of the 325 nm wavelength light, the photocurrent efficiency of the $Cu_2O$ film is $1.8\times10^5 {\mu}A/W$ at a voltage of 2.5 V in air.

• 센서학회지
• /
• 제28권3호
• /
• pp.152-156
• /
• 2019

An ultraviolet (UV) image sensor is an extremely important optoelectronic device used in scientific and medical applications because it can detect images that cannot be obtained using visible or infrared image sensors. Because photodetectors and transistors are based on different materials, conventional UV imaging devices, which have a hybrid-type structure, require additional complex processes such as a backside etching of a GaN epi-wafer and a wafer-to-wafer bonding for the fabrication of the image sensors. In this study, we developed a monolithic GaN UV passive pixel sensor (PPS) by integrating a GaN-based Schottky-barrier type transistor and a GaN UV photodetector on a wafer. Both individual devices show good electrical and photoresponse characteristics, and the fabricated UV PPS was successfully operated under UV irradiation conditions with a high on/off extinction ratio of as high as $10^3$. This integration technique of a single pixel sensor will be a breakthrough for the development of GaN-based optoelectronic integrated circuits.

• Current Optics and Photonics
• /
• 제8권1호
• /
• pp.38-44
• /
• 2024

Under the influence of atmospheric turbulence, a star's point image will shake back and forth erratically, and after exposure the originally small star point will spread into a huge spot, which will affect the ground calibration of the star sensor. To analyze the impact of atmospheric turbulence on the positioning accuracy of the star's center of mass, this paper simulates the atmospheric turbulence phase screen using a method based on a sparse spectrum. It is added to the static-star-simulation device to study the transmission characteristics of atmospheric turbulence in star-point simulation, and to analyze the changes in star points under different atmospheric refractive-index structural constants. The simulation results show that the structure function of the atmospheric turbulence phase screen simulated by the sparse spectral method has an average error of 6.8% compared to the theoretical value, while the classical Fourier-transform method can have an error of up to 23% at low frequencies. By including a simulation in which the phase screen would cause errors in the center-of-mass position of the star point, 100 consecutive images are selected and the average drift variance is obtained for each turbulence scenario; The stronger the turbulence, the larger the drift variance. This study can provide a basis for subsequent improvement of the ground-calibration accuracy of a star sensitizer, and for analyzing and evaluating the effect of atmospheric turbulence on the beam.

• 한국재료학회지
• /
• 제20권5호
• /
• pp.241-245
• /
• 2010

One of the weak points of the Cr-doped SZO is that until now, it has only been fabricated on perovskite substrates, whereas NiO-ReRAM devices have already been deposited on Si substrates. The fabrication of RAM devices on Si substrates is important for commercialization because conventional electronics are based mainly on silicon materials. Cr-doped ReRAM will find a wide range of applications in embedded systems or conventional memory device manufacturing processes if it can be fabricated on Si substrates. For application of the commercial memory device, Cr-doped $SrZrO_3$ perovskite thin films were deposited on a $SrRuO_3$ bottom electrode/Si(100)substrate using pulsed laser deposition. XRD peaks corresponding to the (112), (004) and (132) planes of both the SZO and SRO were observed with the highest intensity along the (112) direction. The positions of the SZO grains matched those of the SRO grains. A well-controlled interface between the $SrZrO_3$:Cr perovskite and the $SrRuO_3$ bottom electrode were fabricated, so that good resistive switching behavior was observed with an on/off ratio higher than $10^2$. A pulse test showed the switching behavior of the Pt/$SrZrO_3:Cr/SrRuO^3$ device under a pulse of 10 kHz for $10^4$ cycles. The resistive switching memory devices made of the Cr-doped $SrZrO_3$ thin films deposited on Si substrates are expected to be more compatible with conventional Si-based electronics.

• 한국재료학회지
• /
• 제20권5호
• /
• pp.257-261
• /
• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.