• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.93-97
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• 2004

Structural and optoelectronic properties of as-synthesized SnO$_2$ nanowires were examined in this study. The SnO$_2$ nanowires were first synthesized by thermal evaporation of ball-milled SnO$_2$ powders in argon atmosphere without the presence of any catalysts, arid their structural properties are then investigated by X-ray diffraction, Raman scattering, scanning electron microscopy, and transmission electron microscopy. This investigation revealed that the synthesized SnO$_2$ nanowires are single-crystalline and that their growth direction is parallel to the [100] direction. In addition, photoresponse of a single SnO$_2$ nanowire was performed with light with above-gap energy, and different characteristics of photoresponses were obtained for the nanowire at ambient atmosphere and in vacuum. The photoresponse mechanism is briefly discussed in this paper.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.28.2-28.2
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• 2011

Resistance random access memory (ReRAM) is a promising candidate for next-generation nonvolatile memory because of its advantageous qualities such as simple structure, superior scalability, fast switching speed, low-power operation, and nondestructive readout. We investigated the resistive switching behavior of tantalum oxide that has been widely used in dynamic random access memories (DRAM) in the present semiconductor industry. As a result, it possesses full compatibility with the entrenched complementary metal-oxide-semiconductor processes. According to previous studies, TiN is a good oxygen reservoir. The TiN top electrode possesses the specific properties to control and modulate oxygen ion reproductively, which results in excellent resistive switching characteristics. This study presents fully room temperature fabricated the TiN/$TaO_x$/Pt devices and their electrical properties for nonvolatile memory application. In addition, we investigated the TiN electrode dependence of the electrical properties in $TaO_x$ memory devices. The devices exhibited a low operation voltage of 0.6 V as well as good endurance up to $10^5$ cycles. Moreover, the benefits of high devise yield multilevel storage possibility make them promising in the next generation nonvolatile memory applications.

• Current Optics and Photonics
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• 제2권1호
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• pp.7-14
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• 2018

As a sophisticated detection technology, LIDAR has been widely employed to probe low-altitude windshear. Due to the drawbacks of the traditional ramp algorithm, the alarm accuracy of the LIDAR has not been satisfactory. Aiming at settling this matter, a novel method is proposed on the basis of improved signal smoothing and second windshear detection, which essentially acts as a combination of ramp algorithm and segmentation approach, involving the human factor as well as signal fluctuations. Experiments on the real and artificial signals verify our approach.

• Current Optics and Photonics
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• 제4권2호
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• pp.134-140
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• 2020

A significant enhancement of the magneto-optical Faraday rotation and extraordinary optical transmission (EOT) in the cascaded double-fishnet (CDF) structure with periodic rectangular apertures is theoretically predicted by using the extended finite difference time domain (FDTD) method. The results demonstrate that the transmittance spectrum of the CDF structure has two EOT resonant peaks in a broad spectrum spanning visible to near-infrared wavebands, one of them coinciding with the enhanced Faraday rotation and large figure of merit (FOM) at the same wavelength. It is most important that the resonant position and intensity of the transmittance, Faraday rotation and FOM can be simply tailored by adjusting the incident wavelength, the thickness of the magnetic layer, and the offset between two metallic rectangular apertures, etc. Furthermore, the intrinsic physical mechanism of the resonance characteristics of the transmittance and Faraday rotation is thoroughly studied by investigating the electromagnetic field distributions at the location of resonance. It is shown that the transmittance resonance is mainly determined by different hybrid modes of surface plasmons (SPs) and plasmonic electromagnetically induced transparency (EIT) behavior, and the enhancement of Faraday rotation is mostly governed by the plasmonic electromagnetically induced absorption (EIA) behavior and the conversion of the transverse magnetic (TM) mode and transverse electric (TE) mode in the magnetic dielectric layer.

• 마이크로전자및패키징학회지
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• 제11권2호
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• pp.11-16
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• 2004

전자칩의 고집적화에 의해 전자기기들은 점점 소형화 되어가고 있으며, 이들 기기들에서 발생되는 열은 기기의 성능 저하뿐 아니라 수명을 단축시킨다. 본 연구에서는 효율적인 방열 위한 마이크로 히트싱크 제조를 위하여 멤브레인에 금속(금, 니켈, 구리)은 도금하는 무전해 도금 방법을 이용하였다. 무전해 도금은 폴리카보네이트 멤브레인을 sensitization과 activation 등의 전처리 후, 도금하고자 하는 금속염 수용액에 침적시켜 실행하였다. 무전해 도금에 의하여 제조된 각각의 마이크로피브릴의 열전달 특성과 방열량은 표면적이 가장 큰 니켈 마이크로피브릴에서 가장 우수하게 나타났다.

• KSII Transactions on Internet and Information Systems (TIIS)
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• 제12권7호
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• pp.3338-3355
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• 2018

Images acquired by Large Aperture Static Imaging Spectrometer (LASIS) exhibit obvious interference stripes, which are vertical and stationary due to the special imaging principle of interference hyperspectral image (IHI) data. As the special characteristics above will seriously affect the intrinsic structure and sparsity of IHI, decomposition of IHI has drawn considerable attentions of many scientists and lots of efforts have been made. Although some decomposition methods for interference hyperspectral data have been proposed to solve the above problem of interference stripes, too many times of iteration are necessary to get an optimal solution, which will severely affect the efficiency of application. A novel algorithm for decomposition of interference hyperspectral images based on split Bregman iteration is proposed in this paper, compared with other decomposition methods, numerical experiments have proved that the proposed method will be much more efficient and can reduce the times of iteration significantly.

• 한국재료학회지
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• 제30권10호
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• pp.515-521
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• 2020

Organic-inorganic hybrid perovskite nanocrystals have attracted a lot of attention owing to their excellent optical properties such as high absorption coefficient, high diffusion length, and photoluminescence quantum yield in optoelectronic applications. Despite the many advantages of optoelectronic materials, understanding on how these materials interact with their environments is still lacking. In this study, the fluorescence properties of methylammonium lead bromide (CH₃NH₃PbBr₃, MAPbBr₃) nanoparticles are investigated for the detection of volatile organic compounds (VOCs) and aliphatic amines (monoethylamine, diethylamine, and trimethylamine). In particular, colloidal MAPbBr₃ nanoparticles demonstrate a high selectivity in response to diethylamine, in which a significant photoluminescence (PL) quenching (~ 100 %) is observed at a concentration of 100 ppm. This selectivity to the aliphatic amines may originate from the relative size of the amine molecules that must be accommodated in the perovskite crystals structure with a narrow range of tolerance factor. Sensitive PL response of MAPbBr₃ nanocrystals suggests a simple and effective strategy for colorimetric and fluorescence sensing of aliphatic amines in organic solution phase.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2011

ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.