• Carbon letters
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• 제12권2호
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• pp.90-94
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• 2011

We present the effect of a coupling agent on the optoelectrical properties of few-walled carbon nanotube (FWCNT)/epoxy resin hybrid films fabricated on glass substrates. The FWCNT/epoxy resin mixture solution was successfully prepared by the direct mixing of a $HNO_3$-treated FWCNT solution and epoxy resin. FWCNT/binder hybrid films containing different amounts of the coupling agent were then fabricated on UV-ozone-treated glass substrates. To determine the critical binder content ($X_c$), the effects of varying the binder content in the FWCNT/silane hybrid films on their optoelectrical properties were investigated. In this system, the $X_c$ value was approximately 75 wt%. It was found that above $X_c$, the coupling agent effectively decreased the sheet resistance of the films. From microscopy images, it was observed that by adding the coupling agent, more uniform FWCNT/binder films were formed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.178.2-178.2
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• 2015

In and Ga doped ZnO (IGZO) films were deposited on 5 nm thick Cu film buffered Polycarbonate (PC) substrates with RF magnetron sputtering and then the effect of Cu buffer layer on the optical and electrical properties of the films was investigated. While IGZO single layer films show the electrical resistivity of $1.2{\times}10-1{\Omega}cm$, IGZO/Cu bi-layered films show a lower resistivity of $1.6{\times}10-3{\Omega}cm$. Although the optical transmittance of the films in a visible wave length range is deteriorated by Cu buffer layer, IGZO films with 5 nm thick Cu buffer layer show the higher figure of merit of $2.6{\times}10-4{\Omega}-1$ than that of the IGZO single layer films due to the enhanced opto-electrical performance of the IGZO/Cu bi-layered films.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.57.2-57.2
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• 2007

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.97-98
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• 2009

Here, we describe a versatile strategy for precise control of the optoelectrical properties of the single walled carbon nanotube (SWNT)/silane binder hybrid films by noncovalent hybridization. Stable SWNT/silane binder solutions were prepared by direct mixing of high concentration CNT solutions and silane sol solutions. The critical binder content was determined by varying the amount of binder in the SWNT/binder solutions. A binder content of 50 wt% was used to prepare the other SWNT/binder solutions. This study demonstrates how the intermolecular interactions between the SWNTs and the silanes can affect the conductivity of the CNT/binder network films by characterizing the optoelectrical and Raman spectroscopic properties of the SWNT/silane films containing silane binders with various functional groups. The use of the PTMS binder with phenyl groups was found to be most effective in the fabrication of transparent and conductive films on glass substrates. Such a precise control of the optoelectrical properties of SWNT/binder films can be useful to fabricate the high performance conductive thin films, with ramifications for understanding the fundamental intermolecular interaction in carbon materials science.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• 한국세라믹학회지
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• 제38권12호
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• pp.1085-1092
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• 2001

고효율 AC powder EL 소자를 초저가형과 저전력 소모형으로 분류하여 막의 두께와 제조된 유기결합제에 따라 스크린 프린팅법으로 제조하였다. 제조된 소자의 광전기적 특성을 평가하기 위하여 인가 주파수는 400Hz~1kHz, 인가 전압은 50~300 $V_{rms}$까지 변화시켜 휘도 및 전류밀도를 측정하였다. 주파수 및 전압공급원은 정현파 발생 장치로서 frequency generator를 이용하였다. 또한 휘도는 luminometer 의해 측정되었으며 전류밀도 측정을 위하여 multimeter를 사용하였다. 초저가형 AC powder EL 소자의 경우에는 가소제를 첨가하지 않고 발광층의 두께는 45~50$\mu\textrm{m}$이며 유전층의 두께는 약 10$\mu\textrm{m}$에서 43cd/$m^2$ 정도의 휘도와 20$\mu$A/$cm^2$정도의 전류밀도를 얻을 수 있었으며 저전력 소모형 AC powder EL 소자의 경우에는 15wt의 가소제 첨가하에 발광층의 두께는 45~50$\mu$m이며 유전층의 두께는 15~20$\mu$m에서 74cd/ $m^2$정도의 휘도와 30~40$\mu$A/ $m^2$정도의 전류밀도를 얻을 수 있었다. 또한 수명시간에 있어서 본 연구에서 제조한 AC powder EL 소자가 타사 제품보다 절대적으로 우수한 특성을 보였다.다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.218-218
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• 2008

• 전기전자학회논문지
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• 제13권1호
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• pp.57-64
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• 2009

The optoelectrical characteristics of the ZnO nanoparticles (NPs) annealed in vacuum or oxygen condition from $200^{\circ}C$ to $600^{\circ}C$ were examined. Increased on-off ratio (or, the ratio of photocurrent to dark current) was observed when they were annealed at $300^{\circ}C$, $400^{\circ}C$ and $500^{\circ}C$ with the values enhanced about 4 orders compared to the as-prepared ZnO NPs in both annealing conditions, while the maximum efficiency was shown at the annealing temperature of $600^{\circ}C$ for the ZnO NPs annealed in vacuum with the value of 29.8 mA/W and at the temperature of $500^{\circ}C$ for those annealed in oxygen condition with the value of 40.3 mA/W. Photoresponse behavior of the ZnO NPs annealed in oxygen showed the sharp increase right after the ir exposure to the light followed by the slow decay and saturation during steady illumination, differing from the ZnO NPs annealed in vacuum which only exhibited the gradual increase. This difference occurred due to the curing effect of the oxygen vacancies. SEM images indicated no change in their morphologies with annealing, indicating the change in their internal structures by annealing, and most remarkably at $600^{\circ}C$. As for their photoluminescence(PL) spectra, the decrease of the deep-level(DL) emission was observed when they were annealed in oxygen at $400^{\circ}C$, and not at $200^{\circ}C$ and $600^{\circ}C$.

• 폴리머
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• 제38권4호
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• pp.525-529
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• 2014

반도체 특성을 가지는 금속산화물이 포함된 poly(3,4-ethylenedioxythiophene)(PEDOT)-$TiO_2$ 하이브리드 전도성 박막을 동시-기상중합법을 이용하여 성공적으로 제조하였다. PEDOT-$TiO_2$ 박막은 PEDOT 박막에 비하여 내스크래치성, 연필경도와 같은 기계적 물성과 전기/광학적 특성을 향상시킬 수 있었다. 동시-기상중합으로 제조된 하이브리드 박막은 FTS 산화제에 의한 졸-젤 반응으로 물리화학적으로 안정한 가교구조의 $TiO_2$ 층이 균일하게 형성되어 PEDOT 박막자체의 전기/광학적 손실을 수반하지 않고 기계적 물성을 높일 수 있었다. 동시-기상중합을 통하여 제조된 하이브리드 박막은 PEDOT 박막에 비하여 평탄한 표면구조를 가졌으며, 이로 인하여 상대적으로 높은 전기전도도를 가진다.