• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.370-373
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• 2003

Superluminescent diodes(SLDs) are the optimum light sources for application in optical measurement systems such as fiber gyroscopes, optical time domain reflectometers, and to short and medium distance optical communication systems. The broadband characteristics of SLDs reduce Rayleigh backscattering noise, polarization noise, and the bias offset due to the nonlinear Kerr effect in fiber gyro systems. In this paper, in order to suppress lasing oscillation, we introduced a laterally tilted SCH(Separate Confinement Heterostructure)-SLD with a window region. An output power of 11mW has been achieved at 200mA injection current at 25$^{\circ}C$. At 120mA, parallel and perpendicular to the junction were 31$^{\circ}$${\times}$38$^{\circ}$.

• The Journal of Korean Institute of Communications and Information Sciences
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• 제19권8호
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• pp.1571-1577
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• 1994

This paper is designed and implemented mixer of 12GHz/14GHz as up-conversion. Observation that harmonics and intermodulation power level varied by two signal power level and bias obtained operation points of mixer. Finally, optimum operation points shows that $P_{RF}$(radio signal frequency power level). $P_{LO}$(local oscillation power level) is below -30[dBm], -2[dBm] respectively. Simultaneously $V_{DS}$ is 2.7[V]and $V_{GS}$ is -0.2[V].

• Journal of the Korean Ceramic Society
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• 제42권4호
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• pp.232-236
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• 2005

The etching characteristics of a $LiNbO_{3}$ optical waveguide structure have been investigated using neutral loop discharge plasma with the mixture of $C_{3}F_{8}$ and Ar and the bias power parameters. The etching rate and profile angle of optical waveguide with etching parameters were evaluated by scanning electron microscopy. Also, the etching RMS roughness was evaluated by atomic force microscopy. From the results of optimum etching conditions are the $C_{3}F_{8}$ gas flow ratio of 0.2 and the bias power of 300 W.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제23권12호
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• pp.1380-1387
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• 2012

The transmit/receive(T/R) module is a key component in the active phased array system. The brick-type T/R module has been widely used and the miniaturization has been an important factor to get the flexibility of the system configuration. For the miniaturization, multi-function chips(MFC) having a common leg configuration are suitable to reduce the number of required MMICs and a high isolation between transmit and receive paths is necessary for the high gain T/R modules. In this work, we propose a bias timing scheme for the compact T/R module and show the optimum timing based on measurements, in order to improve the feed-back path loop problem and the consequent isolation problem of the common leg configuration. We have implemented high power(7 W/channel) and high T/R gain(35 dB transmit and 30 dB receive gains) within the half size($140{\times}80{\times}16mm^3$) of the conventional T/R modules.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.502-507
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• 2003

Toward the development of practical methods for observed data oriented bispectral estimation, an automatic means for determining the smoothing bandwidth of bispectral windows is proposed, that can also provide an associated optimum bispectral estimate of stationary non-Gaussian signals, systematically only from an observed time series datum of finite length. For the conventional non-parametric bispectral estimation, the MSE (mean squared error) of the normalized estimate is reviewed under a certain mixing condition and sufficient data length, mainly from the viewpoint of the inverse relation between its bias and variance with respect to the smoothing bandwidth. Based on the fundamental relation, a systematic method not only for determining the bandwidth, but also for obtaining the optimum bispectral estimate is presented by newly introducing a MSE evaluation index of the estimate only from an observed time series datum of finite length. The effectiveness and fundamental features of the proposed method are illustrated by the basic results of numerical experiments.

• Journal of Positioning, Navigation, and Timing
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• 제12권1호
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• pp.11-22
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• 2023

In this paper, we propose an efficient satellite selection method for multi-constellation GNSS. The number of visible satellites has increased dramatically recently due to multi-constellation GNSS. By the increased availability, the overall GNSS performance can be improved. Whereas, due to the increase of the number of visible satellites, the computational burden in implementing advanced processing such as integer ambiguity resolution and fault detection can be increased considerably. As widely known, the optimal satellite selection method requires very large computational burden and its real-time implementation is practically impossible. To reduce computational burden, several sub-optimal but efficient satellite selection methods have been proposed recently. However, these methods are prone to the local optimum problem and do not fully utilize the information redundancy between different constellation systems. To solve this problem, the proposed method utilizes the inter-system biases and geometric assignments. As a result, the proposed method can be implemented in real-time, avoids the local optimum problem, and does not exclude any single-satellite constellation. The performance of the proposed method is compared with the optimal method and two popular sub-optimal methods by a simulation and an experiment.

• Journal of information and communication convergence engineering
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• 제5권2호
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제14권6호
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• pp.236-243
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• 2004

The oxide etching process was characterized in a magnetically enhanced reactive ion etching (MERIE) reactor with a $CHF_3CF_4$ gas chemistry. A statistical experimental design plus one center point was used to characterize relationships between process factors and etch response. The etch response modeled are etch rate, etch selectivity to TiN and uniformity. Etching uniformity was improved with increasing $CF_4$ flow ratio, increasing source power, and increasing pressure depending on source power. Characterization of via etching in $CHF_3CF_4$ MERIE using neural networks was successfully executed giving to highly valuable information about etching mechanism and optimum etching condition. It was found that etching uniformity was closely related to surface polymerization, DC bias, TiN and uniformity.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.821-824
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• 2005

Probe storage is one of the strong candidates for future mobile storage device since it has potential of recording density over I $Tb/in^2$ with r/w speed over 100 Mbps. It also uses silicon-processing technology that suits the purpose of small form factor. In this paper, write characteristics of resistive probe that can rotate the field direction of PZT by field-induced resistance changes in a small resistive region at the apex of the tip will be presented. Also, the relationship between the size of tip and the available write width is investigated for different source bias conditions. For this study, two-dimensional computer simulation ($SILVACO^{TM}$) was performed. With optimum design, the width of the writing electric field can be smaller than 50nm

• The Transactions of The Korean Institute of Electrical Engineers
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• 제60권8호
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• pp.1566-1571
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• 2011

The objective of this paper is to present a quantitative analysis leading to the assessment of optimum terminating impedances in the design of active frequency multipliers. A brief analysis of the basic principal of the GaAs FET frequency multiplier is presented. The analysis is outlined in bias optimization and drive power determination. Utilizing the equivalent circuit model of GaAs FET, we have simulated the optimized load impedance for the maximum output of the active frequency multipliers. The C-class and reverse C-class frequency doublers have been fabricated and the load impedances have been measured. The experimental results are in good agreement with the estimated results in the simulation with the accuracy of 90%.