• Title/Summary/Keyword: Optimum bias

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The Effect of Substrate Bias Voltage during the Formation of BN film by R. F. Sputtering Method (RF 스퍼터링법에 의한 BN박막 증착시 기판 바이어스전압의 영향에 관한 연구)

  • 이은국;김도훈
    • Journal of the Korean institute of surface engineering
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    • v.29 no.2
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    • pp.93-99
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    • 1996
  • In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

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Dependence of pulse width on the operating parameters in a gain-switched semiconductor laser (이득 스위칭 반도체 레이저에서 동작 파라메터에 대한 출력 펄스 폭의 의존성)

  • 이상훈;명승일;이명우;서동선
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.4
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    • pp.101-108
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    • 1998
  • We examine experimentally the dependence of output width on DC bias, RF power, and RF frequency in a gain-switched semiconductor laser. The optimum short pulses are obtained around threshold DC bias. The DC bias to generatoe shorter pulses decreases the RF power increases, whereas it increases to above threshold as the RF freqnecy increases. The pulse width becomes less sensitive to the variations of the DC bias, as the RF bias, or frquency increases.

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Development of a Multiple Response Surface Method Considering Bias and Variance of Desirability Functions (만족도 함수의 편향과 산포를 고려한 다중반응표면최적화 기법 개발)

  • Jung, Ki-Hyo;Lee, Sang-Ki
    • Journal of Korean Institute of Industrial Engineers
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    • v.38 no.1
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    • pp.25-30
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    • 2012
  • Desirability approaches have been proposed to find an optimum of multiple response problem. The existing desirability approaches use either of mean or min of individual desirability in aggregation of multiple responses. However, in order to find an optimum having high mean and low dispersion among individual desirability, the dispersion needs to be simultaneously considered with its mean. This study proposes bias and variance (BV) method which aggregates bias (ideal target-mean) and variance of individual desirability in multiple response optimization. The proposed BV method was applied to an example to evaluate its usefulness by comparing with existing methods. Evaluation results showed that the solution of BV method was a fairly good compared with DS (Derringer and Suich, 1980) and KL (Kim and Lin, 2000) methods. The BV method can be utilized to multiple response surface problems when decision makers want to find an optimum having high mean and low variance among responses.

A Study on the Characteristic for EL Driving Resonant Inverter (EL 구동용 공진형 인버터 특성에 관한 연구)

  • 윤석암
    • Proceedings of the KIPE Conference
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    • 2000.07a
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    • pp.380-383
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    • 2000
  • This paper presents about EL(electro-luminescent) driver with inverter Inverter is constructed by using characteristic of FET and its output characteristics is analysed for the variation of gate bias frequency and load. The optimum operating condition of inverter is that the gate bias frequency of FET equal two resonant frequency of circuit.

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Analysis of Nonlinearity of RF Amplifier and Back-Off Operations on the Multichannel Wireless Transmission Systems. (다 채널 무선 전송 시스템의 RF증폭기의 비선형 및 백-오프 동작 분석)

  • 신동환;정인기;이영철
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.1
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    • pp.18-27
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    • 2004
  • In this paper, we presents an analytical simulation procedure for evaluation in baseband digital modulated signals distortions in the present of RF power amplifier(SSPA) nonlinear behavior and backoff operations of OFDM wireless transmission system. we obtained the optimum nonlinear transfer function of designed SSPA with the SiGe HBT bias currents of OFDM multi-channel wireless transmission system and compared this transfer function to SSPA nonlinear modeling functions mathematically, we finds optimum bias conditions of designed SSPA. With the derived nonlinear modeling function of SSPA, We analysed the PSD characteristics of in-band and out-band output powers of SSPA EVM measurement results of distorted constellation signals with the input power levels of SSPA. The results of paper can be applied to find the SSPA linearly with optimum bias currents and determine the SSPA input backoff bias for AGC control circuits of SSPA.

Effects of Atomic Intermixing of Ta/NiFe Interface on Magnetoresistance and Magnetic Properties in a Ta/NiFe/Cu/NiFe/FeMn/Ta Spin Valve Structure (Ta/NiFe/Cu/NiFe/FeMn/Ta계 스핀밸브 제조시 Ta/NiFe 계면원자섞임이 스핀밸브의 자기저항과 자기적 특성에 미치는 영향)

  • 오세층;이택동
    • Journal of the Korean Magnetics Society
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    • v.8 no.5
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    • pp.288-294
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    • 1998
  • Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increase with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum "effective" free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.have used.

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Dual Mode Power Amplifier for WiBro and Wireless LAN Using Drain Bias Switching (드레인 바이어스 스위칭을 이용한 와이브로/무선랜 이중 모우드 전력증폭기)

  • Lee, Young-Min;Koo, Kyung-Heon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.3 s.357
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    • pp.1-6
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    • 2007
  • A drain bias switching technique is presented to enhance power added efficiency for WiBro and wireless LAN dual band and dual mode transmitter. Some simulations have been done to predict the effect of drain and gate bias change, and bias switching is proposed to get the higher efficiency for dual mode transmitter which generates different output power for different applications. With drain bias switching and simulated optimum fixed gate bias, the amplifier shows dramatic PAE improvement compared to the amplifier without bias switching. The drain and gate bias switching technique will be useful for multi mode communication system with various functions.

The Effects of Substrate Bias Voltage on the Formation of $(ZnS)_{1-x}-(SiO_2)_x$ Protective Films in Phase Change Optical Disk by R.F. Sputtering Method. (R.F. 스퍼터링법에 의한 상변화형 광디스크의 $(ZnS)_{1-x}-(SiO_2)_x$ 보호막 제조시 기판 바이어스전압의 영향)

  • Lee, Tae-Yun;Kim, Do-Hun
    • Korean Journal of Materials Research
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    • v.8 no.10
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    • pp.961-968
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    • 1998
  • In order to investigate the effects of substrate bias voltage on the formation of$ZnS-SiO_2$ protective film in phase change optical disk by R.F. magnetron sputtering method, thin dielectric film was formed on Si wafer and Corning glass by using ZnS(80mol%)-$SiO_2$(20mol%)t arget under argon gas. In this study, the Taguchi experimental method was applied in order to obtain optimum conditions with reduced number of experiments and to control numerous variables effectively. At the same time this method can assure the reproducibility of experiments. Optimum conditions for film formation obtained by above method were target RF power of 200 W. substrate RF power of 20 W, Ar pressure of 5 mTorr. sputtering time of 20 min.. respectively. The phase of specimen was determined by using XRD and TEM. The compositional analysis of specimen was performed by XPS test. In order to measure the thermal resistivity of deposited specimen, annealing test was carried out at $300^{\circ}C$ and $600^{\circ}C$. For the account of void fraction in thin film, the Bruggeman EMA(Effective Medium Approximation) method was applied using the optical data obtained by Spectroscopic Ellipsometry. According to the results of this work, the existence of strong interaction between bias voltage and sputtering time was confirmed for refractive index value. According to XRD and TEM analysis of specimen, the film structure formed in bias voltage resulted in more refined structures than that formed without bias voltage. But excess bias voltage resulted in grain growth in thin film. It was confirmed that the application of optimum bias voltage increased film density by reduction of void fraction of about 3.7%.

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Programmatic Sequence for the Automatic Adjustment of Double Relaxation Oscillation SQUID Sensors

  • Kim, Kiwoong;Lee, Yong-Ho;Hyukchan Kwon;Kim, Jin-Mok;Kang, Chan-Seok;Kim, In-Seon;Park, Yong-Ki
    • Progress in Superconductivity
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    • v.4 no.1
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    • pp.42-47
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    • 2002
  • Measuring magnetic fields with a SQUID sensor always requires preliminary adjustments such as optimum bas current determination and flux-locking point search. A conventional magnetoencephalography (MEG) system consists of several dozens of sensors and we should condition each sensor one by one for an experiment. This timeconsuming job is not only cumbersome but also impractical for the common use in hospital. We had developed a serial port communication protocol between SQUID sensor controllers and a personal computer in order to control the sensors. However, theserial-bus-based control is too slow for adjusting all the sensors with a sufficient accuracy in a reasonable time. In this work, we introduce programmatic control sequence that saves the number of the control pulse arrays. The sequence separates into two stages. The first stage is a function for searching flux-locking points of the sensors and the other stage is for determining the optimum bias current that operates a sensor in a minimum noise level Generally, the optimum bias current for a SQUID sensor depends on the manufactured structure, so that it will not easily change about. Therefore, we can reduce the time for the optimum bias current determination by using the saved values that have been measured once by the second stage sequence. Applying the first stage sequence to a practical use, it has taken about 2-3 minutes to perform the flux-locking for our 37-channel SQUID magnetometer system.

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A Study on a Basis for the Selection of a Design for Quadratic Model Fits Fearing a Cubic Bias in Multilple Response Case

  • Bae, Wha-Soo
    • Journal of the Korean Statistical Society
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    • v.24 no.1
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    • pp.31-44
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    • 1995
  • In fitting a model, there always exists a discrepancy between the fitted model and the true functional relationship. In measuring this discrepancy, Box and Drapper (1959) used the criterion dividing the discrepancy into two parts which are the bias error part and the variance error one in single response case. In this paper, an optimum design which makes these two types of errors as small as possible is found by extending the Box and Drapper criterion to multiple response situation. Especially, a design is found to meat rotatability conditions when we fit a quadratic model to each response fearing cubic bias. Using the central composite design, an application of general results to a specific case is shown to help understanding the material.

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