• Journal of Korea Multimedia Society
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• v.13 no.3
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• pp.457-466
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• 2010

In this paper, we propose a new method for detecting digital forgery that identify interpolated region between digital composited images. For detecting the interpolation factor and the tampered regions, we perform two algorithms: The first algorithm is to estimate the interpolation factors using the differential equation for forgery image along the horizontal, vertical, and diagonal directions, respectively; The second algorithm is to scan the interpolation factors along each direction for detection areas as the mask of the optical window size($64{\times}64$) in order to find out the forgery region. A detection map of the forgery is classified with the magnitude of estimated interpolation factors into colors. This detection map can be used to find out interpolated regions from the tampered image. Experimental results demonstrate the proposed algorithms are proven on several examples. We also show the proposed approach is to accurately detect interpolated regions from digital composite images.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.108-111
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• 2002

CIGS film has been fabricated on soda-lime glass, which is coated with Mo film. by multi-source evaporation process. The films has been prepared with thickness of 1.0 ${\mu}m$, 1.75${\mu}m$, 2.0${\mu}m$, 2.3${\mu}m$, and 3.0${\mu}m$. X-ray diffraction analysis with film thickness shows that CIGS films exhibit a strong (112) preferred orientation. Furthermore. CIGS films exhibited distinctly decreasing the full width of half-maximum and (112) preferred peak with film thickness. Also, The film's microstructure, such as the preferred orientation, the full width at half-maximum(FWHM), and the interplanar spacing were examined by X-ray diffraction. The preparation condition and the characteristics of the unit layers were as followings ; Mo back contact DC sputter, CIGS absorber layer : three-stage coevaporation, CdS buffer layer : chemical bath deposition, ZnO window layer : RF sputtering, $MgF_2$ antireflectance : E-gun evaporation

• Atmosphere
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• v.18 no.4
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• pp.267-277
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• 2008

The occurrence and strength of the Asian Dust over the Korea Peninsular have been increased by the expansion of the desert area. For the continuous monitoring of the Asian Dust event, the geostationary satellites provide useful information by detecting the outbreak of the event as well as the long-range transportation of dust. The Infrared Optical Depth Index (IODI) derived from the MTSAT-1R data, indicating a quantitative index of the dust intensity, has been produced in real-time at Korea Meteorological Administration (KMA) since spring of 2007 for the forecast of Asian dust. The data processing algorithm for IODI consists of mainly two steps. The first step is to detect dust area by using brightness temperature difference between two thermal window channels which are influenced with different extinction coefficients by dust. Here we use dynamic threshold values based on the change of surface temperature. In the second step, the IODI is calculated using the ratio between current IR1 brightness temperature and the maximum brightness temperature of the last 10 days which we assume the clear sky. Validation with AOD retrieved from MODIS shows a good agreement over the ocean. Comparison of IODI with the ground based PM10 observation network in Korea shows distinct characteristics depending on the altitude of dust layer estimated from the Lidar data. In the case that the altitude of dust layer is relatively high, the intensity of IODI is larger than that of PM10. On the other hand, when the altitude of dust layer is lower, IODI seems to be relatively small comparing with PM10 measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Solar Energy
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• v.20 no.2
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• pp.55-65
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• 2000

Better electrical and optical properties of ITO thin films were demanded for the window layer of CdS/CdTe solar cells. To match that demand, an ion beam sputtering system was used for the deposition of ITO thin films. The substrate temperature and ion beam energy were controlled to deposit high quality ITO thin films in two cases of Ar ion sputtering and Ar+$O_2$ ion sputtering. The microstructure changed from domain structure in ITO deposited by Ar ions to grain structure in ITO deposited by Ar+$O_2$ ions. The lowest resistivity of ITO films was $1.5\times10^{-4}{\Omega}cm$ at $100^{\circ}C$ substrate temperature in case of Ar ions sputtering. Transmittance in the visible range was over 80% above $100^{\circ}C$ substrate temperature.

• Korean Journal of Optics and Photonics
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• v.22 no.5
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• pp.223-229
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• 2011

We present a low jitter frequency up-conversion detector based on quasi-phase matched sum frequency generation in a periodically poled $LiNbO_3$ waveguide for efficient single-photon detection at 1.5 ${\mu}m$ telecommunication wavelengths. The maximum detection efficiency and the noise count rate using the pump power of 300 mW and the pump wavelength of 974 nm are about 7% and 480 kHz, respectively. We also characterize the timing jitter of the frequency up-conversion detector by analyzing the time distribution of the detection outputs for photons generated through a picosecond pump pulsed spontaneous parametric downconversion. The minimum timing jitter was measured to be about 39.1 ps. Coincidence measurement with a narrow time window for pulsed up-conversion photons can eliminate the unwanted noise counts and maximize signal to noise ratio.

• Elastomers and Composites
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• v.55 no.1
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• pp.51-58
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• 2020

In this study, the thermal oxidation of raw natural rubber (NR) was investigated under controlled conditions by optical image and fourier transform infrared (FT-IR) analysis. The thermal oxidation was performed on a transparent thin film of raw NR coated on a KBr window in a dark chamber at 80℃ under low humidity conditions to completely exclude moisture and restrict light oxidation. Images of the thin film of raw NR were obtained before and after thermal oxidation. FT-IR absorption spectra were measured in the transmission mode at different thermal exposure times. The thermal oxidation of NR was examined by the changes in the absorption peaks at 3449, 1736, 1447, 1377, 1242, 1072, and 833 cm^-1, which corresponded to a hydroxyl group (-OH), a carbonyl group (-C=O) from an aldehyde and a ketone, a methylene group (-CH₂-), a methyl group (-CH₃), a carbon-oxygen single bond (-C-O) from an epoxide, a carbon-oxygen bond (-C-O) from an ether, an alcohol, a peroxide, or a cyclic peroxide, and a cis-methine group (cis-CCH₃=CH-), respectively. In the initial stage of thermal oxidation, two different types of free radicals were produced quickly and randomly by the homolytic cleavage of a double bond and allylic hydrogen abstraction. Aldehydes and ketones were formed from chain scissions of the double bonds and alcohols were produced from allylic hydrogen abstraction at the methylene or methyl groups. Two reactions seemed to proceed competitively with each other. At a later stage, oxidative crosslinks seemed to dominate through the combination of free radicals such as an allyl radical (CH=CHCH₂·), alkoxy radical (RO·), and peroxy radical (ROO·) and the reaction of a hydroperoxide (-ROOH) with a double bond. The image obtained after thermal oxidation showed hardening without cracks. Based on these observations, a plausible two-step mechanism was suggested for chain hardening caused by the thermal oxidation.

• Korean Journal of Materials Research
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• v.12 no.1
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Nuclear Engineering and Technology
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• v.54 no.3
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• pp.1062-1070
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• 2022

In the present communication, pure and stable α-Bismuth Oxide (Bi₂O₃) nanoparticles (NPs) were synthesized by low temperature solution combustion method using urea as a fuel and calcined at 500℃. The synthesized sample was characterized by using powder X-ray Diffraction (PXRD), Scanning Electron Microscopy (SEM), Energy dispersive X-ray analysis (EDAX), Transmission Electron Microscopy (TEM), Fourier Transform Infrared Spectroscopy (FTIR) and UV-Visible absorption spectroscopy. The PXRD pattern confirms the formation of mono-clinic, stable and low temperature phase α-Bi₂O₃. The direct optical energy band gap was estimated by using Wood and Tauc's relation which was found to be 2.81 eV. The characterized sample was studied for X-ray/gamma ray shielding properties in the energy range 0.081-1.332 MeV using NaI (Tl) detector and multi channel analyzer (MCA). The measured shielding parameters agrees well with the theory, whereas, slight deviation up to 20% is observed below 356 keV. This deviation is mainly due to the influence of atomic size of the target medium. Furthermore an accurate theory is necessary to explain the interaction of X-ray/gamma ray with the NPs.The present work opens new window to use this facile, economical, efficient, low temperature method to synthesize nanomaterials for X-ray/gamma ray shielding purpose.