• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.5
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• pp.69-79
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• 1999

In this paper, we proposed a diffuion model of Ti diffused lithium niobate optical waveguide for fabricating waveguides with high refractive index and compared with conventional one. The achivement of low optical insertion loss between waveguide interface and single mode fibers was discussed as a function of Ti thickness for $\lambda$=1.55$\mu\textrm{m}$ The proposed diffusion method exhibited higher refractive index waveguide than conventional one for $\lambda$=0.6328$\mu\textrm{m}$ We have achieved the total fiber-waveguide-fiber insertion loss as low as 0.5dB/cm in z-cut and 1$\pm$0.5dB/cm in x-cut for both TM and TE mode of Mach-Zehnder interferometric waveguide in the range of Ti thickness 1000-1400$\AA$ for $\lambda$=1.55$\mu\textrm{m}$ From these results, this diffusion model for making a low loss waveguide can be used for low-power-modulators and switches.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.12
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• pp.15-22
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• 2011

Integrated-optic symmetric/asymmetric Mach-Zehnder interferometers at $1.3{\mu}m$ wavelength were studied as sensing part for electric-field measurement system. The devices were simulated based on the BPM software and fabricated utilizing Ti-diffused $LiNbO_3$ channel optical waveguides and lumped-type electrodes. A half-wave voltage of $V_{\pi}$=6.6V and modulation depth of 100% and 75% for a symmetric structure were measured for 200Hz and 1kHz electrical signal bandwidth, respectively. By the way, almost half-maximum power transmission was observed for asymmetric interferometers with ${\pi}$/2 intrinsic phase difference. Expected experimental measurements were observed for 1kHz electrical signal bandwidth.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.5
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• pp.39-48
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• 2000

We newly proposed a polymer based vertical asymmetric optical coupler, which was characterized by simple fabricating procedure and short coupling length. And we fabricated a thermo-optic modulator using the polymeric optical coupler. We optimized the proposed device by coupling characteristic analysis. In a TE polarized 1.33${\mu}{\textrm}{m}$ wavelength, we obtained very short coupling length(L=277.6${\mu}{\textrm}{m}$) with 0.4${\mu}{\textrm}{m}$ thickness of middle layer, high coupling efficiency(94%), and asymmetric vertical waveguides with n$_{u}$ = 1.522, n$_{l}$ = 1.51. We implemented vortical asymmetric thermo-optic modulator with lower inverted rib waveguide and upper slab waveguide. In the 600Hz bandwidth and 4.5㎽ input power, the extinction ratio of the mode was 17㏈ with an insertion loss of 4.5㏈.

• Applied Chemistry for Engineering
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• v.18 no.1
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• pp.77-83
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• 2007

It is essential that second order nonlinear optical materials have low optical propagation losses in the wavelengths of second harmonic generation for practical applications in waveguides. Three dipolar chromophores substituted with nitro, cyano, and alkyl sulfone as an electron withdrawing group were prepared. The UV-Vis absorption spectra of the cyano and alkylsulfone chromophores showed a blue-shift compared to the nitro chromophore. The introduction of oxadiazole segment in the chromophore structure led to similar spectral shift. The blue-shift can produce low optical loses at second harmonics. The chromophores were successfully attached to a polyimide, yielding side chain polymers. The nonlinear optical property of the prepared optical polymers was determined by measuring electro-optic coefficient at 1.55 mm. The polymers exhibited high glass transition temperature of over $185^{\circ}C$ and thermal stability to $300^{\circ}C$ through differential scanning calorimeter analysis and thermal gravimetric analysis.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.5
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• pp.17-23
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• 2017

Optical current sensors are suitable for operation in high voltage and high current environments such as power plants due to they are not affected by electromagnetic interference and have excellent insulation characteristics. However, as they operate in a harsh environment such as large temperature fluctuation and mechanical vibration, high reliability of the sensor is required. Therefore, many groups have been working on enhancing the reliability. In this work, an integrated optical current sensor incorporating polarization-rotated reflection interferometer is proposed. By integrating various optical components on a single chip, the sensor exhibits enhanced stability as well as the solution for low-cost optical sensors. Using this, we performed the characterization for the actual field application. By using a large power source, the current of 0.3 kA~36 kA was applied to the photosensor and the linear operation characteristics were observed. The error of the sensor was within $0{\pm}.5%$. Even when operating for a long time, the error range of the sensor was kept within $0{\pm}.5%$. In addition, the measurement of the frequency response over the range of 60 Hz to 10 kHz has confirmed that the 3-dB frequency band of the proposed OCT is well over 10 kHz.

• Korean Journal of Optics and Photonics
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• v.14 no.2
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• pp.142-145
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• 2003

The nonreciprocal phase shift characteristics of infinite slab optical waveguides with magneto-optic materials in the cladding layer was calculated at 1.55 ${\mu}{\textrm}{m}$ for optical isolators. The infinite slab waveguide structures considered in this paper were as follows. rho magneto-optic materials used as a cladding layer were Ce:YIG and LNB(LuNdBi)$_3$(FeAl)$_{5}$)$_{12}$,). Their specific Faraday rotations Θ$_{F}$ are 4500$^{\circ}$/cm, 500$^{\circ}$/cm at wavelength 1.55 ${\mu}{\textrm}{m}$ respectively. The guiding layer with multi-quantum well structure was used, and it consists of 1.3Q and InGaAs. In order to investigate the effect of evanescent field penetrating the cadding, layer, guiding mode characteristics were calculated for the cases when the substrate is InP and air. We calculated the minimum lengths of 90$^{\circ}$ nonreciprocal phase shifters and their optimum guiding layer thicknesses in various optical waveguide structures.res.s.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.20-24
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• 1998

Photploymer films are widely used in printing and electronic industries, and their usage is expanding to encompass holography, data storage and data processing, optical waveguides and compact disks, etc. One of widely used photoplymerization initiator, 20chloro-hexaarylbiimidazole (o-Cl-HABI), is studied by laser flash photolysis in dichloromethane solution in the absence and presence of the visible light photosensitizing dye, 2, 5-bis[(2, 3, 6, 7 -tetrahydro- 1H, 5H -benzo [i, j,] quinolizin -1-yl) methylene]-cyclopenta-none, (JAW). In the presence of JAW, an increase in triarylimidazolyl radicals L.formation is observed in relative to the absence of JAW. The mechanism of this photosensitizing dissociation is concluded as the dissociation of the o-Cl-HABI radical anion formed by the electron transfer from excited singlet state of JAW to o-Cl-HABI. The observed formation of L.radicals exhibits a linear dependence on o-Cl-HABI concentration. The rate constant of electron transfer obtained from this dependence is equal to (1.0$\pm$0.2) x $10^9 M^{-1}s^{-1}$. No reaction between the excited triplet state of JAW and o-Cl-HABI is found.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.12
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• pp.43-49
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• 2004

In this paper, we have designed a mode size converter to reduce coupling loss between super-high delta silica optical waveguides and single mode fibers. The new mode size converter has three design aspects; periodically segmented taper waveguide for minimal size, lateral taper waveguide for simple fabrication, and surrounding trenches to improve coupling loss. In the optimal mode size converter design, coupling loss is 0.33dB/point without trenches and 0.2dB/point with trenches.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.197-201
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• 2004

SiO$_2$ and SiON thick films were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique on silicon wafer (100) using SiH$_4$ and $N_2$O as precursor gases. In this work, the influence of rf power, and rf bias power on the optical and physical properties of SiO$_2$ and SiON thick films is presented. The refractive index decreases with increasing rf power, and rf bias power. The refractive index of the films varied from 1.4493 to 1.4952 at wavelength at 1552 nm, with increasing rf power, the nitrogen content decreases while the oxygen content increases, in a manner that the O/N ratio increases approximately linearly.

• Korean Journal of Materials Research
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• v.17 no.4
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• pp.222-226
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• 2007

[ $SiO_2$ ]thin films containing Si-nanocrystals and $Er^{3+}$ were fabricated by the RF-sputtering method. Intense emission of $Er^{3+}$ was observed at 1530 nm region after the annealing of the film at $1050^{circ}C$ for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.