• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.49-55
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• 2023

The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10^-4 Ω∙cm, the hole mobility of 51.28 cm²/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

• 한국표면공학회지
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• 제53권1호
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• pp.9-14
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• 2020

CuS (copper sulfide) thin films having the same thickness of 100nm were deposited on the glass substrates using by radio frequency (RF) magnetron sputtering method. RF powers were applied as a process variable for the growth of CuS thin films. The structural and optical properties of CuS thin films deposited under different power conditions (40-100W) were studied. XRD analysis revealed that all CuS thin films had hexagonal crystal structure with the preferential growth of (110) planes. As the sputtering power increased, the relative intensity of the peak with respect to the (110) planes decreased. The peaks of the two bands (264cm^-1 and 474cm^-1) indicated in the Raman spectrum exactly matched the typical spectral values of the covellite (CuS). The size and shape of the grains constituting the surface of the CuS thin films deposited under the power condition ranging from 40W to 80W hardly changed. However, the spacing between crystal grains tended to increase in proportion to the increase in sputtering power. The maximum transmittance of CuS thin films grown at 40W to 80W ranged from 50 % to 51 % based on 580nm wavelength, and showed a relatively small decrease of 48% at 100W. The band gap energy of the CuS thin films decreased from 2.62eV (at 40W) to 2.56eV (at 100W) as the sputtering power increased.

• 한국표면공학회지
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• 제34권5호
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.560-566
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• 2004

In this paper, the electrical and emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma (ICP) with the variation of argon gas pressure and RF power. The RF output was applied to the antenna in the range of 5∼50 W at 13.56 MHz. The internal plasma voltage of the chamber and the probe current were measured while varying the supply voltage to the Langmuir probe in the range of －100V∼＋100V. When the pressure of argon gas was increased, electric current was decreased. There was a significant electric current increase from 10 to 30 W. Also, when the RF power was increased, electron density was increased. Also, the emission spectrum, Ar- I lins, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 mTorr, 10∼300 W, respectively. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• 마이크로전자및패키징학회지
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• 제8권1호
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• pp.1-4
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• 2001

새로운 구조의 APF optical link용 Si pin photodetector를 제작하고 그 특성을 분석하였다. 제작된 소자는 금속-반도체 접촉주위에 $p^{+}$-guard ring구조와 광이 입사되는 수광면에 그물망 모양의 얕은 $p^{+}$-확산영역을 갖는다. 제작된 소자의 전기.광학적 특성을 -5 V의 동작전압에서 측정한 결과, 접합 커패시턴스와 암전류는 각각 4 pF와 180 pA로 나타났으며 광신호 전류와 감도특성는 670 nm이 중심파장을 갖는 2.2 $\mu$W의 입사광 전력 아래에서 각각 1.22 $\mu$A와 0.55 A/W로 나타났다. 제작된 소자는 650~700 nm의 파장영역에서 최대 spectral response를 보이고 있으며 낮은 점한 커패시턴스와 우수한 신호분리능력으로 인해 red light optics응용에서 광신호 검출에 적합하게 사용될 수 있을 것으로 기대된다.

• 한국광학회지
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• 제5권2호
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• pp.266-271
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• 1994

형광 스펙트럼이 Rhodamine 6G의 흡수 스펙트럼과 일치하는 Rhodamine 560을 첨가 색소로 하여 Rhodamine 6G 색소 레이저의 에너지 전달에 의한 출력 증가를 조사하였다. 펌핑 광원으로 펄스형의 경우 아르곤 기체를 주입한 동축 섬광관을 실험실에서 제작하여 사용하였으며 연속형은 아르곤 레이저를 이용하였다. 펄스형의 경우 주색소인 Rhodamine 6G의 종도가 $1\times10^{-4}mol/l$일 때 첨가 색소인 Rhodamine 560의 농도가 Rhodamine 6G농도의 1% 정도에서 에너지 전달효율이 가장 높았다. 연속형의 경우는 Rhodamine 6G의 종도가 $2\times10^{-3}mol/l$ 일 때 Rhodamine 560의 농도가 Rhodamine 6G 농도의 2.5%에서 에너지 전달효율이 가장 높았다. 아르곤 레이저의 multiline발진에 의한 출력이 3.6W일 때 18% 정도 출력이 증가하였으며 488nm와 514.5nm의 단색광으로 펌핑할 경우 아르곤 레이저의 최대 출력이 1.6W일 때 각각 72%와 88%의 출력 증가율을 보였다.

• 대한전자공학회논문지TC
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• 제43권5호
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• pp.35-44
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• 2006

낮은 구동 전류에서 이득 포화 현상을 일으키며 높은 변조 속도를 지원하기 위해 충분한 전광 응답 속도가 제공되는 반사형 반도체 광 증폭기(R-SOA)를 TO-can package 형태로 개발하고 기가급 파장분할다중방식 수동형 광가입자망(WDM-PON)에서 적용 가능성을 시험해 보았다. R-SOA의 제작에 Double trench 구조와 개선된 전류 차단층이 도입되어 고속 변조가 가능해졌다. 자기 방출광(ASE) 주입 방식 R-SOA를 기반으로 하는 기가급 WDM-PON에서 전송 가능하기 위해 필요한 주입 광세기 요구 조건과 사용 가능한 온도 범위를 측정하였다. 주입광의 스펙트럼에 따른 R-SOA의 전송 성능의 변화를 초과이득잡음, Q, 에러오율 측정을 통해 분석하였다. 제안된 파형이 기 조성된 ASE 공급 방법을 사용하여 출력 스펙트럼 감소에 의한 전송 신호의 품질 저하를 보완할 수 있음을 확인하였다.

• 한국광학회지
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• 제10권5호
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• pp.396-400
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• 1999

고출력 erbium 첨가 광섬유 광원을 이용하는 광섬유 자이로스코프에서 측정감도를 개선하기 위하여 신호처리를 통해 자이로의 출력단에서 출력신호에 포함된 광원의 과잉잡음 성분을 소거하였다. 진폭 1.8rad으로 변조된 자이로의 잡음 스펙트럼을 측정한 결과, 본 논문의 방식으로 과잉잡음을 소거한 경우가 소거하지 않은 경우에 비해서 잡음이 13.5dB 감소하였다. 또한, 회전에 따른 자이로 출력을 측정한 결과, 불규칙잡음 계수가 1/4∼1/5 정도로 감소하였다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2008년도 춘계학술발표대회 논문집
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• pp.263-268
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• 2008

Building Integrated PV(BIPV) is one of the best fascinating PV application technologies. To apply PV module in building, various factors should be reflected such as installation position, shading, temperature, and so on. Especially a temperature should be considered, for it affects both electrical efficiency of a PV module and heating/cooling load in a building. This study investigates a semitransparent PV module that is designed as finished material for windows. Therefore it needs to considerate about the optical characteristics of the transparent module. It reports the effect of thermal and optical characteristics of the PV module on generation performance. The study was performed by measuring sun spectrum and luminance through the PV modules and by monitoring the temperature and experiment. The results showed that 1 degree temperature rise reduced about 0.48% of output power.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.31-35
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• 2011

Photovoltaic modules are well known to be one of the most eco generation of electricity. But usually study solar cell. Otherwise, PV modules are also important in power generation. We have to check other subsidiary materials. In this work benefit of using optically superior encapsulation materials(EVA) in generation temperature is demonstrated. Optical characterization of three EVA products demonstrates reduced transmission in the visible ray region of the solar spectrum. It will have a decisive effect to the module efficiency. Test is shown reduction of reflectance and transmittance. Reflections is dependent on the low iron glass. It can be seen between a specific wave length(240~350mm) about 1%. Transmittance in the entire ray region of light is markedly reduced to depending on the temperature rise. The graph is shown optical properties on EVA. Transmission was reduced. about 1%.