• Title/Summary/Keyword: Optical power spectrum

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Influence of temperature of a second harmonic crystal on the power stability of intracavity frequency-doubled diode pumped Nd:$YVO_4$ lasers (비선형 광학 결정의 온도가 다이오드 레이저 펌핑된 내부 공진기형 Nd:$YVO_4$ 이차 조화파 레이저의 출력 안정도에 미치는 영향)

  • Kim Ji Won;Yun Chun Seop
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.02a
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    • pp.220-221
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    • 2003
  • Intracavity second harmonic generation of diode pumped solid state lasers in the visible and ultraviolet regions provide efficient, compact and robust light sources for various applications, such as optical data storage, material processing, spectroscopy and bioanalysis. Advantages of neodymium vanadate (Nd:$YVO_4$) as a gain medium for intracavity-doubled lasers over Nd:YAG lie in the facts that the gain spectrum consists of a single line with short absorption depth, and that the stimulated emission cross sections are larger. (omitted)

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Measurement of Multimode Fiber Bandwidth by the Fourth-Order Spectra of Amplified Spontaneous Emission

  • Moon, Sucbei;Kim, Dug Young
    • Journal of the Optical Society of Korea
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    • v.18 no.1
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    • pp.15-22
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    • 2014
  • We present a novel bandwidth measurement scheme for multimode optical fibers. Amplified spontaneous emission (ASE) radiation was utilized for a source of intrinsically modulated light with a wide modulation bandwidth. In our measurement scheme, the continuous-wave (CW) ASE light that passed through a multimode fiber (MMF) under test was analyzed by the fourth-order power with a high-speed photodetector and an electric spectrum analyzer. The modulation transfer function of the multimode fiber could be directly measured with the photoelectric spectra in the modulation frequency domain. The measurement result of our method was experimentally compared to that of the conventional measurement scheme based on the impulse response measurement. It has been found that our scheme provides a stable measurement means of MMF characterization that is suitable for the field testing due to the simplicity of the system.

Characterization of Erbium-Doped Fiber Amplifier (에르븀 첨가 광섬유증폭기의 특성측정)

  • 한정희;이재승;주무정;심창섭
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.30A no.5
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    • pp.45-51
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    • 1993
  • An erbium doped fiber amplifier(EDFA) pumped by aingle 1.48$\mu$m LD was fabricated, and its gain and noise characteristics were measured. As a signal source, 1548 nm wavelength DFB LD was used. The small signal net gain of the EDFA module was 21.8 dB with maximum gain coefficient 0.7dB/mW for the erbium fiber length of 17.6 m, the pump power of 58 mW, and an input signal power of -25 dBm, respectively. The saturation power of the EDFA was 1 dBm for the input signal power of -5 dBm and the noise figure, measured by using an optical spectrum analyzer, was 5.8 dB for the input signal power of -40 dBm.

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Optical E-H Transition Properties of Inductively Coupled Plasma with Ar Gas Pressure and RF Pourer (Ar 가스 압력과 RF 전력변화에 따른 유도결합형ㆍ플라즈마 E-H모드 변환의 광학적 특성)

  • 허인성;조주웅;이영환;김광수;최용성;박대희
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.1
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    • pp.20-23
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    • 2004
  • In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

High brightness property of Power Electroluminescent Device using ZnS:Cu (ZnS:Cu를 이용한 후막 전계발광소자의 고휘도 특성)

  • Lee, Jong-Chan;Park, Dae-Hui
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.5
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    • pp.349-353
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    • 1999
  • In this paper, to fabricate the AC power electroluminescent device (PELD) with high brightness, new structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material structure that constructed single emissive layer between electrodes was proposed. Dielectric and phosphor material were BaTiO3 and ZnS:Cu respectively. Fabricated AC power EL devices were estimated by optical and electrical properties of EL spectrum, brightness, CIE coordinate system, transferred charge density and EL emission wave in time domain. With above results, we found that brightness of newly proposed AC powder EL power EL device was 2754 cd/m2 at 100V, 400 Hz and compared with conventional device structure.

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Effects of Deposition Parameters on the Bonding Structure and Optical Properties of rf Sputtered a-Si$_{1-x}$C$_{x}$: H films (RF 스퍼터링으로 증착된 a-Si$_{1-x}$C$_{x}$: H 박막의 결합구조와 광학적 성질에 미치는 증착변수의 영향)

  • 한승전;권혁상;이혁모
    • Journal of the Korean institute of surface engineering
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    • v.25 no.5
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    • pp.271-281
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    • 1992
  • Amorphous hydrogenated silicon carbide(a-Si1-xCx : H) films have been prepared by the rf sputtering using a silicon target in a gas mixture of Argon and methane with varying methane gas flow rate(fCH) in the range of 1.5 to 3.5 sccm at constant Argon flow rate of 30sccm and rf power in the range of 3 to 6 W/$\textrm{cm}^2$. The effects of methane flow rate and rf power on the structure and optical properties of a-Si1-xCx : H films have been analysed by measuring both the IR absorption spectrum and the UV transmittance for the films. With increasing the methane flow rate, the optical band gap(Eg) of a-Si1-xCx : H films increases gradually from 1.6eV to the maximum value of 2.42eV at rf power of 4 W/$\textrm{cm}^2$, which is due to an increases in C/Si ratio in the films by an significant increase in the number of C-Hn bonds. As the rf power increases, the number of Si-C and Si-Hn bonds increases rapidly with simultaneous reduction in the number of C-Hn bonds, which is associated with an increase in both degree of methane decomposition and sputtering of silicon. The effects of rf power on the Eg of films are considerably influenced by the methane flow rate. At low methane flow rate, the Eg of films decreased from 2.3eV to 1.8eV with the rf power. On the other hand, at high methane flow rate, that of films increased slowly to 2.4eV.

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Growth of Nd:YAG single crystal by czochralski method and characteristics of laser generation (Czochralski 방법에 의한 Nd : YAG 단결정의 육성 및 레이저 출력특성)

  • 이상호;김한태;배소익;정수진
    • Korean Journal of Optics and Photonics
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    • v.9 no.3
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    • pp.175-180
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    • 1998
  • Nd:YAG single crystal widely used as solid state laser was grown by Czochralski method. <111> single crystal with 0.9at% of $Nd^{3+}$ was grown from the Czochralski furnace with a automatic diameter control system. The vertical temperature gradient in the liquid was the major factor that influence the crystal quality, and the crystal diameter was controlled by the home made computer program. The crystal boule with $\phi$50mm$\times$ι100mm effective size was cut, polished, and antireflection coated. The optical evaluation such as absorption spectrum, fluorescence spectrum coincide with typical features of Nd:YAG single crystal. The laser rod was assembled into the CW laser generator with a Kr lamp. The maximum CW laser output was 70 W and the threshold power and efficiency was 1.3kW and 1.64% respectively.

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Half mJ Supercontinuum Generation in a Telecommunication Multimode Fiber by a Q-switched Tm, Ho:YVO4 Laser

  • Zhou, Renlai;Ren, Jiancun;Lou, Shuli;Ju, Youlun;Wang, Yuezhu
    • Journal of the Optical Society of Korea
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    • v.19 no.1
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    • pp.7-12
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    • 2015
  • Up to ${\sim}520{\mu}J$ broadband mid-infrared (IR) supercontinuum (SC) generation in telecommunication multimode fiber (MMF) directly pumped by a $2.054{\mu}m$ nanosecond Q-switched Tm, $Ho:YVO_4$ laser is demonstrated. An average output power of 3.64 W is obtained in the band of ~1900 to ~2600 nm, and the corresponding optic-to-optic conversion efficiency is 67% by considering the coupling efficiency. The spectrum has extremely high flatness with negligible intensity variation (<2%) in the wavelength interval of ~2070 to ~2475 nm. The SC long-wavelength edge is limited by the silicon glass material loss, and by optimizing the MMF length, the SC spectrum could extend out to ${\sim}2.6{\mu}m$. The output SC pulse shapes are measured at different output powers, and no splits are found. The SC laser beam is nearly diffraction limited with an $M^2=1.15$ in $2.1{\mu}m$ measured by the traveling knife-edge method, and the laser beam spot is monitored by an infrared vidicon camera.

Flat Sweeping Automatic Hold of Wavelength Swept Laser (파장 스위핑 레이저의 평탄 스위핑 자동 유지)

  • Lee, Duk-Kyu;Eom, Jinseob
    • Journal of IKEEE
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    • v.23 no.2
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    • pp.606-613
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    • 2019
  • In this paper, a new method for flat sweeping automatic hold of wavelength swept laser has proposed. Through the performance test on the implemented laser, even 5 hours passed, the flat sweeping has held up well, and 56nm flat sweeping range, 1kHz sweeping frequency, and 8.8mW average optical power were obtained. This showes that the proposed can eliminate the necessity of hand-operated polarization control required for previous swept lasers in case of long time operation and also optical spectrum analyzer needed to monitor the sweeping spectrum status.

Optical Properties of Inductively Coupled Plasma with Ar Gas Pressure and RF Power (13.56MHz) (Ar 가스압력과 RF 전력변화 (13.56MHz)에 따른 유도결합형 플라즈마의 광학적 특성)

  • Her, In-Sung;Kim, Kwang-Soo;Choi, Yong-Sung;Lee, Jong-Chan;Park, Dea-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05e
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    • pp.92-95
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    • 2003
  • In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10~60m Torr, 10~300W respectively.

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