• 한국전기전자재료학회논문지
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• 제27권9호
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• pp.589-593
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• 2014

AlNO multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. $Al_2O_3$/AlNO(LMVF)/AlNO(HMVF)/Al/substrate of 4 multi-layer has been prepared in an Ar and ($N_2+O_2$) gas mixture, and $Al_2O_3$ of top layer is anti-reflection layer on double AlNO(LMVF)/AlNO(HMVF) layers and Al metal of infrared reflection layer. In this study, the roughness and surface properties of AlNO thin films were estimated by field emission scanning electron microscopy(FE-SEM). The grain size of AlNO thin films increased with increasing sputtering power. The composition of thin films has been systematically investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The absorptance of AlNO films shows the increasing trend with swelling ($N_2+O_2$) gas mixture in HMVF and LMVF deposition. The excellent optical performance showed above 98% of absorptance in visible wavelength region.

• 한국재료학회지
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• 제13권6호
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• pp.389-393
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• 2003

The effect of antireflection layer on the reduction of optical loss has been investigated in Si photodiodes detecting red light with central wavelength of 670 nm. The theoretical analysis showed minimum reflection loss of 6% for the $SiO_2$thickness of about $1100∼1200\AA$ in the $SiO_2$-Si system with the single antireflection layer and no reflection loss for the X$N_3$N$_4$$SiO_2$thickness of $2000\AA$/$1200\AA$ in the $Si_3$$N_4$$SiO_2$-Si system with double antireflection layer. In our experiments, Si photodiodes with the web-patterned $p^{＋}$-shallow diffusion region were fabricated by bipolar IC process technology and the devices were classified into three kinds according to the structure of $Si_3$$N_4$/$SiO_2$antireflection layer. The fabricated devices showed maximum spectral response in the optical spectrum of 650∼700 nm. The average photocurrents of the devices with the $Si_3$$N_4$$SiO_2$thickness of $1000\AA$/X$SiO\AA$, and $2000\AA$$1800\AA$ under the incident power, of -17 dBm were 3.2 uA, 3.5 uA and 3.1 uA, respectively.

• 한국광학회지
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• 제10권4호
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• pp.311-317
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• 1999

다이오드 레이저 펌핑 Nd:YAG 레이저를 평면 반일체 고리형 공진기를 이용하여 1064 nm 파장에서 단방향, 단일 모드로 발진시켰다. 실험에 사용된 반일체 고리형 공진기는 자기장 내에 놓여진 Nd:YAG 레이저 활성매질, 결정 석영판, 출력경으로 구성되어 전체적으로 광 다이오드로서 작용한다. 이에 대한 고유편광 이론 연구가 수행되었으며, 고유편광 모드에 대한 광손실이 계산되었다. 1.2 W, 809 nm 다이오드 레이저로 펌핑하여 155 mW의 단일 모드 출력을 얻었으며, 이때의 기울기 효율은 17%이었다. 동일한 두 레이저 시스템이 제작되었는데, 그 출력들의 맥놀이 주파수 스펙트럼으로부터 100 kHz 이하의 레이저 선폭을 갖는 것으로 측정되었고, 2 GHz 이상의 영역에서 연속적인 주파수 튜닝이 관측되었다.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.820-824
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• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• 한국세라믹학회지
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• 제56권1호
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• pp.71-76
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• 2019

Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.

• 대한기계학회논문집A
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• 제41권5호
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• pp.435-442
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• 2017

반사 굴절 광학계는 굴절과 반사를 이용하여 영상을 전달한다. 영상의 질을 높이려면 광학계에 있는 부경의 편심과 경사가 작게 발생되고 주경이 광량을 최대로 받도록 부경 지지대의 형상이 결정되어야 한다. 특히 감시 정찰용 광학계는 랜덤 가속도 진동을 심하게 받는다. 이러한 환경하에 최선의 설계를 하기 위하여 표준편차로 표현된 편심과 경사에 대한 제한조건을 만족하면서 부경 지지대의 부피를 최소화하여야 한다. 편심과 경사의 표준편차는 통계적인 표현이므로 이들에 대한 설계민감도를 해석학적으로 유도하기가 어렵다. 그러므로, 이 표준편차들을 반응 표면 분석법을 이용하여 2차 회귀 방정식으로 대체한 후 형상 최적 설계를 수행하였다. 검토 결과 본 논문의 방법이 랜덤 진동을 받는 강건한 부경 지지대의 형상 최적화에 효율적임을 알 수 있다.

• 한국광학회지
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• 제31권5호
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• pp.223-230
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• 2020

본 논문에서는 전광섬유 master oscillator power amplifier (MOPA) 구조의 이터븀(ytterbium) 첨가 편광유지 광섬유 레이저의 유도 브릴루앙 산란 및 모드 불안정 특성에 대해 연구하였다. 이터븀 첨가 광섬유 및 신호 광원의 종류에 따라 레이저 출력 및 역반사 스펙트럼을 측정하여 광섬유 레이저의 출력 증폭 한계를 분석하였다. 레이저 구조의 최적화를 통해 단일모드 빔 품질을 갖는 전광섬유 고출력 편광유지 광섬유 레이저를 구현하였다. Pseudo-random binary sequence (PRBS) 신호에 의해 위상변조된 10 GHz의 선폭을 갖는 신호 광원을 적용하여 1.5 kW의 출력을 얻었다. 최대 출력에서 1.15의 빔 품질을 가지며, 17 dB 이상의 편광소광률 특성을 확인하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.149-149
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• 2010

The double-layer antireflection (DLAR) coatings have significant advantages over single-layer antireflection (SLAR) coatings. This is because they will be able to cover a broad range of the solar spectrum which would enhance the overall performance of solar cells. Moreover films deposited at high frequency are expected to show excellent and UV-stable passivation in the refractive index that we adopted. In this work, we present a novel DLAR coating using SiNx:H thin films with refractive indices 1.9 and 2.3 as the top and bottom layers. This approach is cost effective when compared to earlier DLAR coatings with two different materials. SiNx:H films were deposited by Plasma enhanced chemical vapor deposition (PECVD) technique using $SiH_4$, $NH_3$ and $N_2$ gases with flow rates 20~80sccm, 200sccm and 85 sccm respectively. The RF power, plasma frequency and substrate temperature for the deposition were 300W, 13.56 MHz and $450^{\circ}C$, respectively. The optimum thickness and refractive indices values for DLAR coatings were estimated theoretically using Macleod simulation software as 82.24 nm for 1.9 and 68.58 nm for 2.3 respectively. Solar cells were fabricated with SLAR and DLAR coatings of SiNx:H films and compared the cell efficacy. SiNx:H> films deposited at a substrate temperature of $450^{\circ}C$ and that at 300 W power showed best effective minority carrier lifetime around $50.8\;{\mu}s$. Average reflectance values of SLAR coatings with refractive indices 1.9, 2.05 and 2.3 were 10.1%, 9.66% and 9.33% respectively. In contrast, optimized DLAR coating showed a reflectance value as low as 8.98% in the wavelength range 300nm - 1100nm.

• 한국결정성장학회지
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• 제20권4호
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• pp.164-167
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• 2010

본 연구에서는 HVPE을 이용하여 sapphire(001) 기판 위에 직경 2 inch, 두께 약 1.5 mm인 bulk GaN를 성장하고, 이를 mechanical polishing을 통해 $10{\times}10,\;15{\times}15$ mm 크기의 free-standing GaN template을 제작하여 그 특성을 평가하였다. 성장된 GaN 단결정의 X-ray diffraction pattern 결과 (002) 및 (004) 면으로부터의 회절에 의한 peak가 나타났으며, (002) 면의 DCXRD(Double crystal X-Ray diffraction) rocking curve peak의 반치폭(FWHM)은 98 arcsec으로 나타났다. 제작한 GaN template는 363 nm 파장에서 sharp한 PL spectrum을 나타내었으며, 불순물 defect에 의한 yellow 영역에서의 broad peak은 관찰되지 않았으며, 제작된 GaN template표면의 etch-pit 밀도는 $5{\times}10^6/cm^2$으로 매우 낮았다. 이러한 분석결과를 통하여 성장된 GaN template는 LED 및 LD 등의 청색 발광소자 및 고온, 고출력 소자용 기판재료로 응용이 가능할 것으로 생각 된다.

• 전기학회논문지P
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• 제61권2호
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• pp.97-102
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• 2012

CPV system in the desert areas or areas near the equator, as is suitable for high-temperature region. As compared to silicon solar cells, CPV system have a high proportion of a BOS (balance of system). Solar cells because of its low proportion when designing a module technology is applied in a variety of ways. Applied to the CPV system is classified into two kinds of optical technology. One of those using fresnel lens uses refraction of light energy. The other is a mirror reflection of the structure using sprays. Both of these two ways to condense the sun to collect solar cell is a form of light. And goals by using a small solar cell materials is to produce more energy. In this paper, suitable for a domestic environment, with the aim CPV Manufacturing Technology, built on a variety of modular process technology to the development of a prototype performance analysis was carried out. In particular, silicone coated on the glass by the method of implementation of the Fresnel lens SOG(Silicon on glass) by applying the lens to absorb the solar spectrum was broad. In addition to, for the analyze to characteristics of the CPV module, developed CPV module performance and generating characteristics studied. These related technology through research and development of high-performance multi-junction solar cells, modules, development of concentrating solar power systems to facilitate the growth of the market is considered to be.