• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.5
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• pp.227-231
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• 2010

Super hydrophilic $TiO_2$ thin films with photocatalytic property were successfully fabricated on a glass substrate by liquid phase deposition (LPD). The $TiO_2$ thin film formed nano particles on a surface at $70^{\circ}C$. As an immersion time in $TiF_4$ solution increased, the thickness of thin films gradually increased. $TiO_2$ thin film showed a water contact angel of below ca. $5^{\circ}$ and the transmittance of ca. 75~90 % in visible range. In addition, $TiO_2$ thin film showed the photocatalytic property to decompose methyl orange solution by the illumination of UV light. The surface morphologies, optical properties and contact angel of prepared thin films with a different immersion time were measured by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), UV-Vis spectrophotometer and contact angle meter.

• Clean Technology
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• v.18 no.4
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• pp.366-372
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• 2012

Three acrylic copolymers containing tris(8-hydroxyquinoline) aluminum (AlQ3) pendant group (25 wt%), acrylateco-HEMA-$AlQ_3$ (25 wt%), were successfully synthesized by free radical polymerization from acrylates [methyl methacrylate (MMA), acrylonitrile (AN) or 2-hydroxyethyl methacrylate (HEMA)] with HEMA functionalized with AlQ3 pendant groups (HEMA-p-$AlQ_3$). The glass transition temperatures ($T_g$) of MMA-co-HEMA-p-$AlQ_3$ (copolymer 1), AN-co-HEMA-p-$AlQ_3$ (copolymer 2) and HEMA-co-HEMA-p-$AlQ_3$ (copolymer 3) were found to be 158, 150 and $126^{\circ}C$, respectively. They have good thermal stability: a very desirable feature for the stability of OLEDs. Their solubility, thermal properties, UV-visible absorption and photoluminescence behaviors were investigated. They were found to be soluble in various organic solvents such as tetrahydrofuran (THF), dimethylformamide (DMF), toluene and chloroform. It was also found that the UV-visible absorption and photoluminescence behaviors of these copolymers were similar to those of pristine $AlQ_3$. Green organic light-emitting diodes (OLEDs) have also been fabricated using these copolymers as light emission/electron transport components obtained easily by spin coating, and their current density voltage (J-V) curves were compared. The OLED device of the copolymer 3 had the lowest turn-on voltage of about 2 V compared to other copolymer types devices.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.224-229
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• 2010

Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.178-184
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• 2001

Transparent and highly oriented KLN thin films have been grown by an rf- magnetron sputtering deposition method. A homogeneous and stable KLN target was prepared by calcine and sintering process. For KLN target, stoichiometry and composition excess with K of 30% and 60%, and Li of 15% and 30% respectively, was prepared. The targets were sintered at low temperature to prevent vaporization of K and Li. KLN thin films were fabricated by rf-magnetron sputtering method using those targets. In this experiment, using the target of composition excessed with K of 60% and Li of 30%, single phase KLN thin film was produced. KLN thin film has excellent crystallinity and highly c-axis oriented on Corning 1737 substrate. Transmittance of thin film in visible range was 90%, absorption edge is 333 nm and refractive index at 632.8 nm was 1.93.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.154-154
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• 2006

Samsung Electro Mechanics ink jet has developed ultra high resolution alignment system. The alignment system has been developed for repeatable printing of conductive ink. The resolution of alignment system is 0.5um and the velocity of printing working plate is 1.5m/s. So far repeated printing results included sintering process have over 30um of drop mislocation data. In order to improve line thickness and conductivity of metal line, we need to develop the higher mechanical accurate align system. On the demand, this developed align system has under $1{\sim}2{\mu}m$ mispositioning performance and can measure of mechanical accuracy of inkjet printer, as well as the straightness of jetted drop from inkjet head. There is no kinds limit of substrate and ink to use SEM alignment system. By using this alignment system, we progress two experiment of reiterate printing drop and making conductive line on the glass and photo paper. Optical microscope and 3D profiler has been used for measurement of printed ink.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.28 no.1
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• pp.15-21
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• 2022

The purpose of our study was to investigate the migration level of lead (Pb), cadmium (Cd), and barium (Ba) from glassware into a food simulant and to evaluate the exposure of each element. The test articles were glassware, including tableware, pots, and other containers. Pb, Cd, and Ba were analysed by Inductively Coupled Plasma Optical Emission Spectrometry (ICP-OES). The analytical performance of the method was validated in terms of its linearity, limit of detection (LOD), limit of quantification (LOQ), recovery, precision, and uncertainty. The monitoring was performed for 110 samples such as glass cups, containers, pots, and bottles. a food simulant. Migration test was conducted at 25? for 24 hours in a dark place using 4% acetic acid as a food simulant. Based on the data; exposure assessment was carried out to compare the estimated daily intake (EDI) to the human safety criteria. The risk levels of Pb and Ba determined in this study were approximately 1.9% and 0.3% of the provisional tolerable weekly intake (PTWI) and tolerable daily intake (TDI) value, respectively, thereby indicating a low exposure to the population.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.142-150
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• 2023

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9×10^-4 Ω·cm and about 1.0×10^-4 Ω·cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 ℃.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.78-82
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• 2023

A fabrication of smart windows with controllable visible light transmittance in three steps by using λ/2 retardation films based on a reactive mesogen (RM) material and polarizing films is demonstrated. The phase retardation films with a Δn·d value of λ/2 (λ: wavelength) convert the direction of a traveling light to the optical axis of the film symmetrically. In this work, the retardation characteristics according to the RM thickness were evaluated and henceλ/2 phase retardation film can be fabricated. The phase retardation film with Δn·d of 276.1 nm, which is close to λ/2 (=275 nm @550 nm), was fabricated. The light transmittance of a smart window with the structure of (polarizing film)/(glass)/(alignment layer)/(λ/2 retardation film) was measured in the transmission mode, half mode and blocking mode. The evaluation results show that the transmittance of the smart window can be controlled in three steps with 35.8%, 27.8%, and 18.2% at each mode, respectively. In addition, by fabricating a smart window with a size of 15×200 mm², the feasibility of use in various fields such as buildings and automobiles was verified.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.5
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• pp.797-802
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• 2023

We prepared GZO (Ga₂O₃ : 5 wt %, ZnO : 95 wt %) thin film on glass substrate according to the substrate temperature using the pulsed laser deposition method and investigated electrical and optical properties of the thin film. Through the XRD measurements, their were confirmed that all GZO thin films grew preferentially in c-axis and the GZO thin film deposited at 300℃ showed the best crystallinity with a FWHM of 0.38°. As the substrate temperature increased from 150 to 300℃, the resistivity of GZO thin film tend to decrease, while the average transmittance in the visible light region was not significantly affected. The figure of merit of the GZO thin film deposited at 300℃ was 2.05×10⁴ Ω^-1·cm^-1, which was the best value, the resistivity and the average transmittance in the visible light region were 3.72 × 10^-4 Ω·cm and 87.71 %, respectively. In this study, it was found that GZO thin film is very promising material for transparent conducting thin film.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.