• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.74-74
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• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.361.2-361.2
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• 2014

Transition metal dichalcogenides (MoS2, WS2, WSe2, MoSe2, NbS2, NbSe2, etc.) are layered materials that can exhibit semiconducting, metallic and even superconducting behavior. In the bulk form, the semiconducting phases (MoS2, WS2, WSe2, MoSe2) have an indirect band gap. Recently, these layered systems have attracted a great deal of attention mainly due to their complementary electronic properties when compared to other two-dimensional materials, such as graphene (a semimetal) and boron nitride (an insulator). However, these bulk properties could be significantly modified when the system becomes mono-layered; the indirect band gap becomes direct. Such changes in the band structure when reducing the thickness of a WS2 film have important implications for the development of novel applications, such as valleytronics. In this work, we report for the controlled synthesis of large-area (~cm2) single-, bi-, and few-layer WS2 using a two-step process. WOx thin films were deposited onto a Si/SiO2 substrate, and these films were then sulfurized under vacuum in a second step occurring at high temperatures ($750^{\circ}C$). Furthermore, we have developed an efficient route to transfer these WS2 films onto different substrates, using concentrated HF. WS2 films of different thicknesses have been analyzed by optical microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.291.2-291.2
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• 2014

ZnO 박막(thin film)은 씨앗층(seed layer)의 종류, 두께, 증착 조건 등에 따라 그 특성이 달라지는 것으로 알려져 있다. 이에 본 연구에서는 씨앗층의 종류에 따른 박막의 특성변화를 알아 보기 위해, 졸겔 스핀코팅(sol-gel spin-coating) 방법으로 4가지 종류의 씨앗층(Al-ZnO, Co-ZnO, Cu-ZnO, In-ZnO) 위에 ZnO 박막을 성장 한 후 성장된 ZnO 박막의 구조적, 광학적 특성을 field emission scanning electron microscope, X-ray diffractometer, UV-visible spectrometer를 통해 조사하였다. ZnO 박막의 표면구조는 씨앗층의 종류에 따라 변하였으며, 씨앗층 위에 성장된 ZnO 박막들의 c축 배향성과 결정성이 씨앗층 없이 성장된 ZnO 박막보다 더 우수하게 나타났다. 투과도(transmittance) 측정값을 통해 계산된 광학적 밴드갭(optical bandgap)과 Urbach 에너지는 씨앗층에 따라 다른 값을 나타내었다. 광학적 밴드갭은 Al-ZnO 씨앗층 위에 성장된 ZnO 박막에서 가장 크게 나타났으며, Urbach 에너지는 Co-ZnO 씨앗층 위에 성장된 ZnO 박막에서 가장 낮았다. 따라서 ZnO박막 성장 시 용도에 맞게 적절한 씨앗층을 사용하는 것은 소자의 성능을 향상시키는데 매우 중요한 역할을 할 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.168.1-168.1
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• 2014

We developed poly (3,4-ethylene dioxylene thiophene):poly (styrene sulfonic acid) (PEDOT:PSS)-free organic solar cells (OSCs) using buffer and anode combined Ta doped $In_2O_3$ (ITaO) electrodes. To optimize the ITaO electrodes, we investigated the effect of $Ta_2O_5$ doping power on the electrical, optical, and structural properties of the co-sputtered ITaO films. The optimized ITaO film doped with 20 W $Ta_2O_5$ radio frequency power showed sheet resistance of 17.11 Ohm/square, a transmittance of 93.45%, and a work function of 4.9 eV, all of which are comparable to the value of conventional ITO electrodes. The conventional bulk heterojunction OSC with ITaO anode showed a power conversion efficiency (PCE) of 3.348% similar to the OSCs (3.541%) with an ITO anode. In addition, OSCs fabricated on an ITaO electrode successfully operated without an acidic PEDOT:PSS buffer layer and showed a PCE of 2.634%, which was much higher than the comparable no buffer OSC with an ITO anode. Therefore, co-sputtered ITaO electrodes simultaneously acting as a buffer and an anode layer can be considered promising transparent electrodes for cost-efficient and reliable OSCs because they can eliminate the use of an acidic PEDOT:PSS buffer layer.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.217.2-217.2
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• 2014

We prepared a flexible and transparent CuO/Cu/CuO multilayer electrodes on a polyethylene terephthalate (PET) substrate using a specially designed roll-to-roll sputtering system at room temperature for GFF-type touch screen panels (TSPs). By the continuous roll-to-roll sputtering of the CuO and Cu layer, we fabricated a flexible CuO(150nm)/Cu(150nm)/CuO(150nm) multilayer electrodes with a sheet resistance of $0.289{\Omega}/square$, resistivity of $5.991{\times}10^{-23}{\Omega}-cm$, at the optimized condition without breaking the vacuum. To investigate the feasibility of the CuO/Cu/CuO multilayer as a transparent electrode for GFF-type TSPs, we fabricated simple GFF-type TSPs using the diamond patterned CuO/Cu/CuO electrode on PET substrate as function of mesh line width. Using diamond patterned CuO/Cu/CuO electrode of mesh line $5{\mu}m$ with sheet resistance of 38 Ohm/square, optical transmittance of 90% at 550 nm and an average transmittance of 89% at wavelength range from 380 to 780 nm, we successfully demonstrated GFF-type touch panel screens (TPSs). The successful operation of GFF-type TPSs with CuO/Cu/CuO multilayer electrodes indicates that the CuO/Cu/CuO multilayer is a promising transparent electrode for large-area capacitive-type TPSs due to its low sheet resistance and high transparency.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.367-367
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• 2014

Transparent conductive oxides (TCOs) 박막은 가시광선영역에서의 높은 투과율과 낮은 저항 특성을 동시에 갖고 있어 최근 smart windows, solar cells, liquid crystal displays (LCD), organic light emitting devices (OLED)등과 같은 최첨단 기기에 필수적인 구성요소로 활발히 사용되고 있다. 따라서, 현재까지 FTO ($SnO_2:F$), ITO ($In_2O_3:Sn$), ATO ($SnO_2:Sb$)등과 같은 다양한 TCO들이 많은 연구자들에 의해 연구되고 있다. 그 중 ITO는 우수한 전기적(${\sim}10^{-4}{\Omega}cm$) 및 광학적(~85%) 특성 때문에 현재 상업적으로 활발히 응용되고 있는 대표적인 물질이다. 하지만 ITO의 주된 구성요소인 indium은 제한적인 매장량과 과도한 소비량 때문에 원가가 비싸다는 문제점이 있다. 반면에, ATO는 우수한 전기적(${\sim}10^{-3}{\Omega}cm$) 및 광학적(~80%) 특성뿐만 아니라 구성물질들의 매장량이 풍부하여 ATO의 원가가 저렴하다는 장점을 가지고 있어 현재 ITO을 대체 할 수 물질로 관심 받고 있다 [1]. 지금까지 우수한 특성을 갖는 ATO박막을 합성하는 방법으로 sol-gel spin coating, sputtering, spray pyrolysis, chemical vapor deposition (CVD)등이 알려져 있다. 이 중에서도, sol-gel spin coating과 spray pyrolysis은 solution기반의 합성법으로 분류되며 합성과정이 간단하고 비용이 저렴하다는 장점이 있고 현재까지 많은 연구가 보고되었다. 그러나, 진공기반이 아닌 우수한 특성을 갖는 solution기반의 ATO박막을 합성하기 위해서는 새로운 합성법의 개발이 학문적으로나 산업적으로도 매우 중요한 이슈이다. 따라서, 본 연구에서는 electrospray을 활용하여 solution기반의 ATO박막을 처음으로 합성하였다. 게다가 ATO박막에 열처리온도에 따른 구조, 화학, 전기, 광학적 특성을 확인하기 위하여 X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM), transmission electron microscopy (TEM), Hall Effect Measurement System, UV spectrophotometer를 사용하였다. 이러한 실험 결과들을 바탕으로 electrospray을 통해 합성된 solution기반의 ATO박막에 자세한 특성을 본 학회에서 다루도록 하겠다.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.336.1-336.1
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• 2014

대표적인 TCO 물질인 ITO는 디스플레이 패널이나 태양 전지 등과 같은 소자에 널리 사용되고 있다. 최근에는 대량생산 및 대면적화, 그리고 유연 디스플레이 응용을 위해 롤투롤 스퍼터링(roll to roll sputtering) 공정을 이용하여 플라스틱 기판에 ITO박막을 증착하여 ITO 필름을 제작하고 있다. 롤투롤 방식으로 ITO 필름의 제작 시 공정 변수에 따라 ITO 박막의 전기적 광학적 물성 변화가 매우 크기 때문에, 공정 변수에 따른 ITO 박막의 전기적, 광학적 특성 변화에 대한 연구의 필요성이 매우 높아지고 있다. 따라서 본 연구에서는 롤투롤 스퍼터링 방법으로 PET 기판 위에 다양한 조건으로 ITO 박막을 증착하여 공정변수에 따른 ITO 박막의 물성을 조사 하였다. 이를 위해 ITO (In/Sn=95/5 wt.%) 타겟을 사용하여 DC 파워와 산소 분압비, 열처리 온도 등을 변화시켜 낮은 면저항과 높은 광투과도를 가지는 최적의 ITO 증착 조건을 찾은 후 ITO 박막을 PET 기판 위에 두께 별로 증착 하였다. ITO 박막의 두께와 열처리 온도에 따른 전기적 특성은 면저항 측정기와 홀 측정 장치를 이용하여 분석하였고, 분광광도계와 탁도 측정기를 이용하여 광학적 특성을 관찰하였다. 또한, GIXD를 이용하여 이들 박막의 구조와 결정성에 대한 조사를 수행하였다. 이 결과들로부터 산소 분압비에 따른 ITO/PET 박막의 저항 특성 변화와 ITO 박막의 두께와 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 조사하여, 롤투롤 스퍼터링법에서 공정 조건에 따른 ITO/PET 필름의 물성변화를 보고하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.241.2-241.2
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• 2014

We present highly transparent liquid crystal displays (LCDs) using hybrid films based on carbon nanomaterials, metal grid, and indium-tin-oxide (ITO) grid. Carbon based nanomaterials are used as transparent electrodes because of high transmittance. Despite of their high transmittance they have relatively high sheet resistance. To solve this problem, we applied grid and made hybrid conductive films based on carbon nanomaterials. Conventional photolithography processes were used to make a grid pattern of metal and ITO. To fabricate transparent conductive films, carbon nanotube (CNT) ink was spin coated on the grid pattern. The transparency of the conductive film was controlled by shape and size of the grid pattern and the thickness of CNT films. The optical transmittance of CNT-based hybrid films is 92.2% and sheet resistance is also reduced to $168{\Omega}/square$. These substrates were used for the fabrication of typical twisted nematic (TN) LCD cells. From the characteristics of LCD devices such as transmittance, operating voltage, voltage holding ratio our devices were comparable to those of pristine ITO substrates. The result shows that the hybrid conductive films based on carbon nanomaterials could be alternative of ITO for the highly transparent LCDs.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.110-113
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• 2017

The two-dimensional layered $MoS_2$ has high mobility and excellent optical properties, and there has been much research on the methods for using this for next generation electronics. $MoS_2$ is similar to graphene in that there is comparatively weak bonding through Van der Waals covalent bonding in the substrate-$MoS_2$ and $MoS_2-MoS_2$ heteromaterial as well in the layer-by-layer structure. So, on the monatomic level, $MoS_2$ can easily be exfoliated physically or chemically. During the $MoS_2$ field-effect transistor fabrication process of photolithography, when using water, the water infiltrates into the substrate-$MoS_2$ gap, and leads to the problem of a rapid decline in the material's yield. To solve this problem, an epoxy-based, as opposed to a water-based photoresist, was used in the photolithography process. In this research, a hydrophobic $MoS_2$ field effect transistor (FET) was fabricated on a hydrophilic $SiO_2$ substrate via chemical vapor deposition CVD. To solve the problem of $MoS_2$ exfoliation that occurs in water-based photolithography, a PPMA sacrificial layer and SU-8 2002 were used, and a $MoS_2$ film FET was successfully created. To minimize Ohmic contact resistance, rapid thermal annealing was used, and then electronic properties were measured.