• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.154-154
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• 1999

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1107-1110
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• 2006

We investigate the effect of processing temperature of gate insulator and optical anisotropy on organic thin-film transistors (OTFTs). The insulator film which was processed lower temperature than solvent boiling temperature can lead more aligned pentacne molecules compare to higher processed insulator film. It finally gives rise to the big increase of carrier mobility in OTFTs, although there are little difference at the seriously affecting properties to device performance, for example roughness of gate insulator film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.8
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• pp.726-730
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• 2002

Electro-optical (EO) performances of the ion beam (IB) aligned twisted-nematic (TN)-liquid crystal display (LCD) with ion beam exposure on the new diamond-like carbon (DLC) thin film surface were investigated. A good voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min was observed. Also, the fast response time of the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved. Finally, the residual DC voltage of the ion beam aligned TN-LCD on the DLC thin film surface is almost the same as that of the rubbing aligned TN-LCD on a polyimide (Pl) surface.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.9-15
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• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.286-288
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• 2014

This study deals with the catalyst free radio frequency plasma assisted polymerization of ethylene glycol using nitrogen as reactive gas to modify the surface chemistry and morphology. The deposited film was characterized through various analysis techniques i.e. surface profilometry, Forier transform infrared spectroscopy, water contact angle and UV-visible spectroscopy to analyze film thickness, chemical structure, surface energy and optical properties respectively. The surface topography was analyzed by Atomic force microscopy. It was observed that the ethylene oxide behaviour and optical transmittance of the film were reduced with the introduction of nitrogen gas due to higher fragmentation of monomer. However the hydrophilic behavior of the film improved due to formation of new water loving functional groups suitable for biomedical applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.477-480
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• 2003

We investigated the electro-optical (EO) performances of the super twisted nematic liquid crystal display (STN-LCD) on the polyimide (PI) surface using polymer film. Monodomain alignment of the plastic STN-LCD can be observed. A stable voltage-transmittance (V-T) curve of the plastic STN-LCD was observed on the polyimide (PI) surfaces using polymer film. Also, a faster response time for the plastic STN-LCD on the polyimide (PI) surfaces using polymer film can be achieved. However, the transmittance of the plastic STN-LCD on the polyimide (PI) surfaces using polymer film decreased greatly as cell gap decreases.

• Transactions of the Society of Information Storage Systems
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• v.9 no.2
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• pp.67-71
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• 2013

The fabrication method of plasmonic nanodots on silicon substrate has been developed to improve the efficiency of thin film solar cells. Nanoscale metallic nanodots arrays are fabricated by anodic aluminum oxide (AAO) template mask which can have different structural parameters by varying anodization conditions. In this paper, the structural parameters of gold nanodots, which can be controlled by the diverse structures of AAO template mask, are investigated to enhance the optical properties of a-Si thin film solar cells. It is found that optical properties of the thin film solar cells are improved by finding optimization values of the structural parameters of the gold nanodot array.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.51-55
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• 2009

We investigated that electrical and optical the properties of IZO thin film for OLED anode application. The IZO thin film was the deposited on the glass substrate by facing targets system as a function of substrate temperature. As a result, the electrical and optical property of IZO thin film prepared with $150^{\circ}C$ was most excellent. To confirm the suitability of the IZO thin film for OLED anode, we evaluated the performance of OLED with IZO/TPD/Alq3/LiF/Al fabricated on IZO anode. Also, the performance of OLED fabricated on IZO anode showed the most excellent at $150^{\circ}C$ substrate temperature.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.117-121
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• 2010

The composite films were fabricated by air-spray method under the 2 kgf/$cm^2$ pressure using the multi-walled CNTs solution and the nitrocellulose on a 10 ${\mu}m$ polyimide film substrates. We obtained the composite films which were sprayed with the MWCNT dispersion by varying the spray time from 20, 40 and 60sec. The electrical and the optical properties of the sandwiched-structure-composite thin films were investigated by an UV/VIS spectrometer and a Hall Effect equipment. As a result, the optical transmittance of all thin films in the visible range, as well as the electrical conductance shows an available value for the transparent electrode. The carrier concentration and the light transmittance rate for the fabricated sample are between $3.733{\times}10^{10}$ and $6.551{\times}10^{14}cm^{-3}$, around 35 to 95%, respectively.

• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.49-54
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• 1989

Thin solid film systems polarizing beam splitter and disk amplifier used in the high power laser system ({{{{ lambda }}0=1060nm) are designed by computer aided optimization technique. Extinction ratio of designed polarizing beam splitter for incidence angle 30$^{\circ}$, 45$^{\circ}$, 55.60$^{\circ}$ are 1:93, 1:895, 1:1991. respectively. Maximum reflectance of designed thin film system of disk amplifier is less than 3% for pumping band (500-900nm) and 0.15% for laser beam. Further, SiO film chosen as one of the suitable thin films in the high power laser system is prepared by the sol=-gel process which gives high damage threshold. When the withdrawal speed is 6.15cm/min -16.62 cm/min and the mixing ratio is in the range of 1 mol (ethylsilicate): 4-8mol(ethylalcohol) : 2mol(water), the thickness of deposited film is in the range of 500{{{{ ANGSTROM }}-1500{{{{ ANGSTROM }}.