• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.539-545
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• 2001

Undoped and Co$^{2+}$ $\alpha$-Ga$_2$S$_3$ thin films were grown by spray pyrolysis method. It has been found that these thin films have a monoclinic structure and direct optical energy gap and indirect were located to 3.477eV and 3.123 eV at 10K respectively. In the photoluminescence due to a D0A(donor-acceptor) pair recombination were observed at 502 nm and 671 nm for the $\alpha$-Ga$_2$S$_3$ thin film, where is excited by the 325 nm-line of He-Cd laser. These peaks are identified to be corresponding to the electron transition between the energy levels of Co$^{2+}$ ion sited a the T$_{d}$ symmetry point in the $\alpha$-Ga$_2$S$_3$;Co$^{2+}$ thin film. film.

• 한국재료학회지
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• 제32권5호
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• pp.249-257
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• 2022

Transparent thin films of pure and nickel-doped ZrO₂ are grown successfully by sol-gel dip-coating technique. The structural and optical properties according to the different annealing temperatures (300 ℃, 400 ℃ and 500 ℃) are investigated. Analysis of crystallographic properties through X-ray diffraction pattern reveals an increase in crystallite size due to increase in crystallinity with temperature. All fabricated thin films are highly-oriented along (101) planes, which enhances the increase in nickel doping. Scanning electron microscopy and energy dispersive spectroscopy are employed to confirm the homogeneity in surface morphology as well as the doping configuration of films. The extinction coefficient is found to be on the order of 10^-2, showing the surface smoothness of deposited thin films. UV-visible spectroscopy reveals a decrease in the optical band gap with the increase in annealing temperature due to the increase in crystallite size. The variation in Urbach energy and defect density with doping and the change in annealing temperature are also studied.

• 한국진공학회지
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• 제3권2호
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• pp.227-233
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• 1994

CuAlGeSe4 및 CuAlGeSe4 ; Co2+ 결정을 고순도의 성분원소로부터 합성하고 서냉법으로 결정을 성장시켰다. 이들결정은 chalcopyrite 결정구조를 갖고 있으며 직접전이형 energy gap 구조를 갖고 286K에서 energy gap은 CuAlGeSe4 결정의 경우는 2.394eV이며 CuAlGeSe4 ; Co2+ 결정의 경우는 2.302 eV로 주어졌다. CuAlGeSe4 : Co2+ 결정에서 cobalt에 의한 불순물 광흡수 peak들은 12243, 7002, 3890 cm-1에서 나타났으며 이 peak들은 CuAlGeSe4 : Co2+ 결정의 Td symmetry site에 위치한 Co2+ ion의 energy 준위사이의 전자전이에 의한 optical absorption임을 규명했다.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1814-1818
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• 1989

The crystals of ZnGa2S4 and ZnGa2S4:Co(2mole%) were synthesized from high-purity (99.999%) elements of Zinc, Gallium, and sulfur. The crystal structure of these crystals belong to a tetragonal system with layer type and the lattice constants are a =5.35\ulcorner c=10.43\ulcornerfor ZnGa2S4: Co(2 mole%) crystal at 298\ulcorner. The optical absorption spectra of these compounds were obtained through reflectance measurements using a 60 mm diameter intergrating sphere. The optical energy gaps are 3.18eV for ZnGa2S4 and 2.60eVfor ZnGa2S4:L Co(2mole%)at 298\ulcorner, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1047-1049
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• 2003

Stibenequinone(SQ) derivative which was electronic transportation materials in Poly(N-vinylcarbazole) (PVK)-based on organic EL and an optical characteristic of organic EL which is mentioned previously was investigated. The Photoluminescence highest pick with blending TBSQ with PVK was shifted from 439nm to 517nm. This result indicates that an energy gap of a PVK/TBSQ blended sample is less than an energy gap of PVK. According to the electrochemistry characteristic, the ionization energy(Ip) and the electro affinity(Ea) decreased from 5.79eV to 5.63eV and 2.23eV to 2.63eV, respectively.

• Current Optics and Photonics
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• 제3권6호
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• pp.566-570
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• 2019

To investigate dependence of the sensitivity of THz metamaterials on the position of target dielectric materials, we functionalized the metamaterial gap with an adhesive polymer. A shift in resonance frequency occurs when polystyrene microbeads are deposited in the gap of the metamaterial's metal resonator pattern, while little change is observed when they are deposited on other areas of the metasurface. A two-dimensional mapping of the sensitivity, with a grid size of 1 ㎛, is obtained from a finite-difference time-domain simulation: The frequency shift is displayed as a function of the position of a target dielectric cube. The resulting sensitivity distribution clearly reveals the crucial role of the gap in sensing with metamaterials, which is consistent with the electric field distribution near the gap.

• 공업화학
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• 제30권2호
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• pp.205-211
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• 2019

지난 수십 년 동안 고분자 분산형 액정(polymer dispersed liquid crystal, PDLC)은 전기광학적으로 전환이 가능한 특성으로 인해 빛의 투과도를 자유롭게 조절할 수 있는 smart window를 개발하는 물질로서 주목을 받아왔다. 본 연구에서는 높은 구동전압과 낮은 명암비 등의 PDLC 문제점을 해결하기 위해 아크릴계 단량체 2-hydroxyethyl acrylate (2-HEA)와 ethylene glycol phenyl ether acrylate (EGPA)의 조성이 PDLC의 전기광학 특성에 미치는 영향을 평가하였다. 상온에서 10 cps 이하의 낮은 점도를 나타내는 2-HEA와 EGPA 단량체를 사용하여 제조하는 경우 보다 쉽게 capillary action에 의해서 indium tin oxide (ITO) glass 사이에 주입하는 공정이 가능하였다. Phenyl group를 포함한 EGPA 단량체가 대부분으로 이루어진 1 : 9인 단량체 혼합물로 만들어진 PDLC cell의 경우 전기장을 인가하지 않은 경우에도 불투명한 상태가 관측되지 않았고 인가 전압에 따라 매우 불안정한 투과율을 나타내었다. Cell gap thickness가 증가함에 따라 문턱전압(threshold voltage, $V_{th}$)과 포화전압(saturation voltage, $V_{sat}$)도 증가하는 경향을 나타내었으며, $20{\mu}m$의 cell gap thickness를 갖는 PDLC cell이 10과 $40{\mu}m$의 경우 보다 상대적으로 높은 명암비를 나타내었다. 특히, 7 : 3 비율의 2-HEA : EGPA 단량체 혼합물을 사용하여 제조된 PDLC cell의 경우가 낮은 구동전압과 높은 명암비의 가장 우수한 전기광학적 특성을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제15권4호
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.25-29
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• 2015

In this study, RF magnetron sputtering was used to investigate the relationship between oxygen vacancy and carrier concentration in a GZO film on an amorphous structure. RF power was fixed at 50W and Ar flow was changed on a glass plate to create a thin film at room temperature. The transmittance of Al-adopted amorphous GZO was measured at 85% or higher; therefore, the transmittance was shown to be outstanding in all films. The hall mobility was also shown to be higher at the film showing the high transmittance at a short-wavelength, whereas the optical energy gap was shown to be higher at the film with high oxygen vacancy. The oxygen vacancy at the amorphous oxide semi-conductor increased the optical energy gap while it was not directly involved in increasing the mobility. The oxygen vacancy increases the carrier concentration while lowering the quality of amorphous structure; such factor, therefore affected the mobility. The increase of amorphous property is a direct way to increase the mobility of amorphous oxide semi-conductor.

• Current Photovoltaic Research
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• 제2권2호
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• pp.41-47
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• 2014

Extensive investigation on silicon based thin film reveals a wide range of film characteristics, from low optical gap to high optical gap, from amorphous to micro-crystalline silicon etc. Fabrication of single junction, tandem and triple junction solar cell with suitable materials, indicate that fabrication of solar cell of a relatively moderate efficiency is possible with a better light induced stability. Due to these investigations, various competing materials like wide band gap silicon carbide and silicon oxide, low band gap micro-crystalline silicon and silicon germanium etc were also prepared and applied to the solar cells. Such a multi-junction solar cell can be a technologically promising photo-voltaic device, as the external quantum efficiency of such a cell covers a wider spectral range.