• Journal of the Korean Magnetics Society
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• v.19 no.5
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• pp.186-190
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• 2009

We investigated the magneto-optical properties and application of diluted magnetic semiconductors Cd$_{1-x}$Mn$_x$Te crystals with various Mn contents grown using a vertical Bridgman method. This material crystallizes in the zinc-blende structure for values of x < 0.82. The band-gap energy was depended on Mn mole fraction x linearly and increased with decreasing temperature. The Faraday rotation was increased as the photon energy increased near to that of the fundamental band gap and its increased with increasing Mn mole fraction. Optical isolator using the Cd$_{0.62}$Mn$_{0.38}$Te crystal shows that the isolation and insertion loss are 45 dB and 0.35 dB at 650 nm, respectively.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.213-217
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• 1996

HgS and HgS: Co crystals and films grown by the slow cooling and the chemical bath deposition method were used to measure their crystal structure and their optical absorption spectra. HgS and HgS: Co crystals are hexagonal structure with the lattice constant $a_0=4.155{\AA}$, $c_0=9.505{\AA}$ for HgS and $a_0=4.148{\AA}$, $c_0=9.462{\AA}$ for HgS and $a_0=4.135{\AA}$, $c_0=9.442{\AA}$ for HgS: Co, respectively. The optical energy gap of these crystals are given as 2.040 eV for HgS and 1.900 eV for HgS: Co, and the optical energy gap of these films were 2.440 eV for HgS and 1.940 eV for HgS: Co at room temperature, respectively.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.847-854
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• 2012

Al-doped ZnO (AZO) thin films were grown on quartz substrates by the sol-gel method. The effects of the Al mole fraction on the structural and optical properties of the AZO thin films were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV-VIS spectroscopy. The particle size of the AZO thin films decreased with an increase in Al concentrations. The optical parameters, the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity, were studied in order to investigate the effects of Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at an infinite wavelength of the AZO thin films were affected by the Al incorporation. The optical conductivity of the AZO thin films also increased with increasing photon energy.

• Korean Journal of Materials Research
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• v.26 no.6
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• pp.347-352
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• 2016

ZnO with wurtzite structure has a wide band gap of 3.37 eV. Because ZnO has a direct band gap and a large exciton binding energy, it has higher optical efficiency and thermal stability than the GaN material of blue light emitting devices. To fabricate ZnO devices with optical and thermal advantages, n-type and p-type doping are needed. Many research groups have devoted themselves to fabricating stable p-type ZnO. In this study, $As^+$ ion was implanted using an ion implanter to fabricate p-type ZnO. After the ion implant, rapid thermal annealing (RTA) was conducted to activate the arsenic dopants. First, the structural and optical properties of the ZnO thin films were investigated for as-grown, as-implanted, and annealed ZnO using FE-SEM, XRD, and PL, respectively. Then, the structural, optical, and electrical properties of the ZnO thin films, depending on the As ion dose variation and the RTA temperatures, were analyzed using the same methods. In our experiment, p-type ZnO thin films with a hole concentration of $1.263{\times}10^{18}cm^{-3}$ were obtained when the dose of $5{\times}10^{14}$ As $ions/cm^2$ was implanted and the RTA was conducted at $850^{\circ}C$ for 1 min.

• Current Applied Physics
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• v.18 no.12
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• pp.1465-1472
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• 2018

The magnetic and optical properties of Ce-doped ZnO systems have been widely demonstrated, but the effects of different strains of Ce-doped ZnO systems remain unclear. To solve these problems, this study identified the effects of biaxial strain on the electronic structure, absorption spectrum, and magnetic properties of Ce-doped ZnO systems by using a generalized gradient approximation + U (GGA + U) method with plane wave pseudopotential. Under unstrained conditions, the formation energy decreased, the system became stable, and the doping process became easy with the increase in the distances between two Ce atoms. The band gap of the systems with different strains became narrower than that of undoped ZnO without strain, and the absorption spectra showed a red shift. The band gap narrowed, and the red shift became weak with the increase of compressive strain. By contrast, the band gap widened, and the red shift became significant with the increase of tensile strain. The red shift was significant when the tensile strain was 3%. The systems with -1%, 0%, and 1% strains were ferromagnetic. For the first time, the magnetic moment of the system with -1% strain was found to be the largest, and the system showed the greatest beneficial value for diluted magnetic semiconductors. The systems with -3%, -2%, 2%, and 3% strains were non-magnetic, and they had no value for diluted magnetic semiconductors. The ferromagnetism of the system with -1% strain was mainly caused by the hybrid coupling of Ce-4f, Ce-5d, and O-2p orbits. This finding was consistent with Zener's Ruderman-Kittel-Kasuya-Yosida theory. The results can serve as a reference for the design and preparation of new diluted magnetic semiconductors and optical functional materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.50-53
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• 1995

In this paper we have obtained property by considering the change of optical energy gap as a function of photo-does for exposing photo on Ag/a-Se$\sub$75/Ge$\sub$25/ thin films. This U-type property was obsered for all photo-exposing except for blu-pass filtered Hg lamep. Expecially, very large band shift(~0.3[eV]) is obtained by exposing He-Ne laser (6328[${\AA}$]). It is impossible to explain this property for exposing He-Ne and semiconductor laser through DWP model, which was explained for photo-exposing above the energy gap. Therefore we suggest a new modified model of DWP model for Ag/a-Se$\sub$75/Ge$\sub$25/ bilayer thin films.

• Journal of Electrical Engineering and Technology
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• v.5 no.4
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• pp.637-639
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• 2010

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

• Journal of the Korean institute of surface engineering
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• v.37 no.4
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• pp.191-195
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• 2004

Gallium or sulphur additions in $CuInSe_2$ were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films shows a chalcopyrite structure with the S and Ga addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The energy band gap of films could be shifted from 1.04 to 1.68 eV by adjusting the mole ratio of S/(S+Se) and Ga/(In+Ga). It is possible to obtain the optimum energy band gap by adding S or Ga solute at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In and Se to provide better properties of thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.607-608
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• 2005

In this paper, author describe the undoped and $Co^{2+}$(0.5mole%) doped $Cd_4SnSe_6$ single crystals were grown by the chemical transport reaction(CTR) method. The grown single crystals crystallize in the monoclinic structure of space group Cc and have the direct band gap structure. The energy gaps of them are 1.68 eV for $Cd_4SnSe_6$ and 1.50 eV for $Cd_4SnSe_6:Co^{2+}$ at 300K respectively.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.136-143
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• 1997

The photvoltaic power system has received considerable attention as the petroleumalterative energies to the environmental problems in the wored scale. $CuLnSe_2$is one ofthe most promising materials for the fabrication of large-area modules and low cost photovoltaic devices. Sulfur solute CuInSe2 thin films were prepared by RF sputtering using powder targer which were previously compacted by powder of $Cu_2Se, \;In_2Se_3, \;Cu_2S, \;and\;In_2S_3$ in various ratios. The results induicated that the sulfur ratio, the(112) texture, and the energy band gap were increased by the increase of the S/(S+Se) that was controlled by stoichiometric compound. The energy band gap can be shifted from 1.04eV to 1.50eV by abjusting the S/(S+Se) ratio, which maich it possible to obtain perfect match to the solar spectrum.