• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.44-44
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• 2003

Free electron lasers (FEL) have, at least, the following advantages in comparison to conventional lasers： FEL can be designed for any arbitrary given emission wavelength. It is continuously tunable within wide band. Easy to get single-mode emission. Easily controlled emission structure (pulse duration, repetition rate, and pulse energy). (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.32-32
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• 2011

Plasma etching is used in microelectronic processing for patterning of micro- and nano-scale devices. Commonly, optical emission spectroscopy (OES) is widely used for real-time endpoint detection for plasma etching. However, if the viewport for optical-emission monitoring becomes blurred by polymer film due to prolonged use of the etching system, optical-emission monitoring becomes impossible. In addition, when the exposed area ratio on the wafer is small, changes in the optical emission are so slight that it is almost impossible to detect the endpoint of etching. For this reason, as a simple method of detecting variations in plasma without contamination of the reaction chamber at low cost, a method of measuring plasma impedance is being examined. The object in this research is to investigate the suitability of using plasma impedance monitoring (PIM) with statistical approach for real-time endpoint detection of $SiO_2$ etching. The endpoint was determined by impedance signal variation from I-V monitor (VI probe). However, the signal variation at the endpoint is too weak to determine endpoint when $SiO_2$ film on Si wafer is etched by fluorocarbon plasma on inductive coupled plasma (ICP) etcher. Therefore, modified principal component analysis (mPCA) is applied to them for increasing sensitivity. For verifying this method, detected endpoint from impedance analysis is compared with optical emission spectroscopy (OES). From impedance data, we tried to analyze physical properties of plasma, and real-time endpoint detection can be achieved.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.97-100
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• 2018

$NF_3$ Plasma etching of silicon was conducted by injecting only $NF_3$ gas into reactive ion etching. $NF_3$ Plasma etching was done in intermediate pressure. Silicon etching by $NF_3$ plasma in reactive ion etching was diagnosed through residual gas analyzer and optical emission spectroscopy. In plasma etching, optical emission spectroscopy is generally used to know what kinds of species in plasma. Also, residual gas analyzer is mainly to know the byproducts of etching process. Through experiments, the results of optical emission spectroscopy during silicon etching by $NF_3$ plasma was analyzed with connecting the results of etch rate of silicon and residual gas analyzer. It was confirmed that $NF_3$ plasma etching of silicon in reactive ion etching accords with the characteristic of reactive ion etching.

• Journal of the Semiconductor & Display Technology
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• v.16 no.2
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• pp.75-78
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• 2017

We reports improved monitoring performance of Self plasma-optical emission spectroscopy (SP-OES) by augmenting a by-pass tube to a conventional straight (or single) tube type self plasma reactor. SP-OES has been used as a tool for the monitoring of plasma chemistry indirectly in plasma process system. The benefits of SP-OES are low cost and easy installation, but some semiconductor industries who adopted commercialized SP-OES product experiencing less sensitivity and slow sensor response. OH out-gas chemistry monitoring was performed to have a direct comparison of a conventional single type tube and a by-pass type tube, and fluid dynamic simulation on the improved hardware design was also followed. It is observed faster pumping out of OH from the chamber in the by-pass type SP-OES.

• Bulletin of the Korean Chemical Society
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• v.23 no.3
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• pp.525-527
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• 2002

• Journal of the Optical Society of Korea
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• v.12 no.1
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• pp.7-12
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• 2008

Directional emission of light exiting a photonic crystal waveguide by a coherent action of radiative surface modes was recently demonstrated, and subsequently the substantial enhancement of the directional emission was achieved by engineering the surface and adjusting relevant parameters. Here we present the analysis of surface modes causing the enhanced emission by the plane wave expansion method and the finite-difference time-domain method. In particular, surface band structures are calculated for nonradiative and radiative surface modes, respectively, and intensity profiles of some representative modes for nonradiative and radiative cases are given.

• Current Optics and Photonics
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• v.3 no.4
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• pp.292-297
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• 2019

We propose a ring resonator-based orbital angular momentum carrying vortex beam generator design with high vertical directional emission efficiency. By adopting a vertically asymmetric grating structure in the ring resonator, optimized for enhanced vertical emission, an emission efficiency in one direction reaches as high as 78%, exceeding the 50% theoretical limit of previously designed vertically symmetric grating-assisted ring resonator-based structures.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.98-102
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• 2001

Effects of laser polarization were studied on behaviors of fast electrons produced from an aluminum target irradiated by a solid target irradiated by obliquely incident laser pulses at Bx10$\^$15/ W/cm$^2$. Jet emission of outgoing fast electrons collimated in the polarization direction was observed for the s-polarized laser irradiation, whereas for the p-polarized irradiation, very directional emission of outgoing fast electrons was found close to the normal direction of the target. The behaviors of in-going fast electrons into the target for s- and p-polarized irradiation were also investigated by observing x-ray Bremsstrahlung radiation at the backside of the target.

• The Bulletin of The Korean Astronomical Society
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• v.42 no.2
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• pp.74.3-74.3
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• 2017

Considering the statistical redshift distribution of the known submillimeter galaxy (SMG) population, most of the significant optical emission lines such as [OII]${\lambda}3727$, $H{\beta}$, [OIII]${\lambda}5007$, and $H{\alpha}$ are redshifted into near-infrared. Using the 3D-HST grism data that provides low resolution NIR spectroscopy over the several deep fields covered by the JCMT large program S2CLS, I investigated the properties of the optical emission lines for submm galaxies which could be used as a proxy for future optical/NIR identification and follow up of the SMGs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.413-414
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• 2008

We have studied an organic layer thickness dependent optical properties and microcavity effects for top-emission organic light-emitting diodes. Manufactured top emission device, structure is Al(100nm)ITPD(xnm)/$Alq_3$(ynm)/LiF(0.5nm)/Al(23nm). While a thickness of hole-transport layer of TPD was varied from 35 to 65nm, an emissive layer thickness of $Alq_3$ was varied from 50 to 100nm for two devices. A ratio of those two layers was kept to about 2:3. Variation of the layer thickness changes a traverse time of injected carriers across the organic layer, so that it may affect on the chance of probability of exciton formation. View-angle dependent emission spectra were measured for the optical measurements. Top-emission devices show that the emission peak wavelength shifts to longer wavelength as the organic layer thickness increases. For instance, it shifts from 490 to 555nm in the thickness range that we used. View-angle dependent emission spectra show that the emission intensity decreases as the view-angle increases. The organic layer thickness-dependent emission spectra show that the full width at half maximum decreases as the organic layer thickness increases. Top emission devices show that the full width at half maximum changes from 90 to 35nm as the organic layer thickness increases. In top-emission device, the microcavity effect is more vivid as the organic layer thickness increases.