• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.73-79
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• 2013

Crystalline silicon solar cells with $SiN_x/SiN_x$ and $SiN_x/SiO_x$ double layer anti-reflection coatings(ARC) were studied in this paper. Optimizing passivation effect and optical properties of $SiN_x$ and $SiO_x$ layer deposited by PECVD was performed prior to double layer application. When the refractive index (n) of silicon nitride was varied in range of 1.9~2.3, silicon wafer deposited with silicon nitride layer of 80 nm thickness and n= 2.2 showed the effective lifetime of $1,370{\mu}m$. Silicon nitride with n= 1.9 had the smallest extinction coefficient among these conditions. Silicon oxide layer with 110 nm thickness and n= 1.46 showed the extinction coefficient spectrum near to zero in the 300~1,100 nm region, similar to silicon nitride with n= 1.9. Thus silicon nitride with n= 1.9 and silicon oxide with n= 1.46 would be proper as the upper ARC layer with low extinction coefficient, and silicon nitride with n=2.2 as the lower layer with good passivation effect. As a result, the double layer AR coated silicon wafer showed lower surface reflection and so more light absorption, compared with $SiN_x$ single layer. With the completed solar cell with $SiN_x/SiN_x$ of n= 2.2/1.9 and $SiN_x/SiO_x$ of n= 2.2/1.46, the electrical characteristics was improved as ${\Delta}V_{oc}$= 3.7 mV, ${\Delta}_{sc}=0.11mA/cm^2$ and ${\Delta}V_{oc}$=5.2 mV, ${\Delta}J_{sc}=0.23mA/cm^2$, respectively. It led to the efficiency improvement as 0.1% and 0.23%.

• Clean Technology
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• v.20 no.4
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• pp.415-424
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• 2014

In this study, two kinds of polymer (PPQX-2hdPTZ (P1), POPQX-2hdPTZ (P2)) were synthesised by Suzuki coupling reaction based on phenothiazine derivative as electron-donor and quinoxaline derivative as electron-acceptor. Microwave synthesis workstation was used to shorten the polymerization time and increase the degree of polymerization. The physical, thermal stability, optical and electrochemical properties of the synthesized polymer were confirmed. The thermal stability of two polymers was outstanding as the initial decomposition temperature was $323-328^{\circ}C$. And additional substituted alkoxy chain on P2 showed higher degree of polymerization. An analysis of electrochemical properties, all polymer had similar HOMO energy level values. Device was fabricated by ITO/PEDOT:PSS/active layer/$BaF_2$/Al structure and photovoltaic properties were confirmed. Each device has a different film thickness and the resulting change in PCE was confirmed. As a result the thinner thickness of the film showed a high efficiency ($PCE_{max}:P1=1.0%$, P2 = 1.1%).

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.216-220
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• 2014

We have synthesized a $CaMgSi_2O_6:Eu^{2+}$ blue phosphor via a solid-state reaction method. The $CaMgSi_2O_6:Eu^{2+}$ phosphor has monoclinic structure with a space group of C2/c (15), and an emission band peaking at 450 nm (blue) due to the $4f^7-4f^65d$ transition of the $Eu^{2+}ion$. The emission intensity at $100^{\circ}C$ is 54% of the value at room temperature. A white LED was fabricated by integrating a UV LED (400 nm) with our blue phosphor plus two commercial green and red phosphors. The white LED shows a color temperature of 3500 K with a color rendering index of 87 (x = 0.3936, y = 0.3605), and a luminous efficiency of 18 lm/W. The white LED shows a luminance maintenance of 97% after operation at 350 mA for 400 hours at $85^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.15-21
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• 1993

This paper describes the design and development of a KrF excimer laser stepper and discusses the detailed system parameters and characterization data obtained from the performance test. We have developed a deep UV step-and-repeat system, operating at 248 nm, by retrofitting a commercial modules such as KrF excimer laser, precision wafer stage and fused silica illumination and 5X projection optics of numerical aperture 0.42. What we have developed, to the basic structure, are wafer alignment optics, reticle alignment system, autofocusing/leveling mechanisms and environment chamber. Finally, all these subsystem were integrated under the control of microprocessor-based controllers and computer. The wafer alignment system comprises the OFF-AXIS and the TTL alignment. The OFF-AXIS alignment system was realized with two kinds of optics. One is the magnification system with the image processing technique and the other is He-Ne laser diffraction type system using the alignment grating on the wafer. 'The TTL alignment system employs a dual beam inteferometric method, which takes advantages of higher diffraction efficiency compared with other TTL type alignment systems. As the results, alignment accuracy for OFF-AXIS and TTL alignment system were obtained within 0.1 $\mu\textrm{m}$/ 3 $\sigma$ for the various substrate on the wafers. The wafer focusing and leveling system is modified version of the conventional systems using position sensitive detectors (PSD). This type of detection method showed focusing and leveling accuracies of about $\pm$ 0.1 $\mu\textrm{m}$ and $\pm$ 0.5 arcsec, respectively. From the CD measurement, we obtained 0.4 $\mu\textrm{m}$ resolution features over the full field with routine use, and 0.3 $\mu\textrm{m}$ resolution was attainable under more strict conditions.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.184-189
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• 2010

Organic light-emitting diodes (OLEDs) with single emissive layer structures using two fluorescent dopants were fabricated and the device was composed of ITO / NPB ($700{\AA}$) / MADN : C545T - 1.0% : DCJTB - 0.3% ($300{\AA}$) / Bphen ($300{\AA}$) / LiF ($10{\AA}$) /Al ($1,000{\AA}$). C545T and DCJTB were functioned as green fluorescent dye and red fluorescent dye under MADN as host material. Concentrations of C545T and DCJTB was changed in emissive layer of MADN. Optimized OLED device using two fluorescence dopants shows emission efficiency of 8.42 cd/A and luminescence of 3169 cd/$m^2$at 6 V with CIE color coordinate, (0.43, 0.50). Electroluminescence of optimized OLED showed two peak at 500 and 564 nm according to C545T and DCJTB. These results indicate that F$\ddot{o}$ster energy transfer energy transfer was from MADN to C545T and rather than to DCJTB continuously.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.57-61
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• 2016

In order to protect the solar cells from the moisture and oxygen, we evaluated the electrical and optical properties for the $Cu(In,Ga)Se_2$ (CIGS) solar cells which were prepared by the spray coating method. Generally, the EVA (ethylene-vinyl acetate) films are laminated to protect the CIGS flexible solar cells, which results in a high cost process due to complicated devices. In this study, we tried to prepare the protection layers of the flexible CIGS flexible solar cells by using spray coating method instead of conventional laminating films in order to reduce the device weight as well as the process time. The CIGS solar cells with spray coating method showed an enhanced efficiency than the before treated sample (2.77% to 2.93%) and relatively proper water vapor transmission rate of the solar cells about 62.891 gm/[$m^2-day$].

• Korean Journal of Optics and Photonics
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• v.9 no.4
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• pp.221-226
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• 1998

Ternary heavy metal oxide glasses in the $PbO-Bi_2O_3-Ga_2O_3$ system doped with $Er_2O_3$ were prepared and their spectroscopic properties, such as radiative transition probability, calculated and measured radiative lifetimes and cross-sections of 1.5 $\mu\textrm{m}$ and 2.7 $\mu\textrm{m}$ emissions were analyzed. Enhanced quantum efficiencies of some electronic transitions were evident mainly because of the low vibrational phonon energy ($~500cm^{-1}$) inherent in the host glasses. This seems to be the main reason for obtaining the 2.7 $\mu\textrm{m}$ luminescence which is normally quenched in the conventional oxide glasses. In addition, green and red fluorescence emissions were observed through the frequency upconversion processes of the 798 nm excitation. Non-radiative transition due to the multiphonon relaxation is a dominant lifetime-shortening mechanism in the 4f-4f transitions in $Er^{3+}$ ion except for the $^4S_{3/2}{\rightarrow}^4I_{15/2}$ transition where a non-radiative transfer to band-gap excitation of the host glasses is dominant. Melting of glasses under an inert gas atmosphere and (or) addition of the typical glass-network former into glasses is necessary in order to enhance the quantum efficiency of the transition.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Nuclear Engineering and Technology
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• v.49 no.5
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• pp.1044-1062
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• 2017

The construction project of the Kijang research reactor (KJRR), which is the second research reactor in Korea, has been launched. The KJRR was designed to use, for the first time, U-Mo fuel. Plate-type U-7 wt.% Mo/Al-5 wt.% Si, referred to as U-7Mo/Ale5Si, dispersion fuel with a uranium loading of $8.0gU/cm^3$, was selected to achieve higher fuel efficiency and performance than are possible when using $U_3Si_2/Al$ dispersion fuel. To qualify the U-Mo fuel in terms of plate geometry, the first miniplates [HANARO Miniplate (HAMP-1)], containing U-7Mo/Al-5Si dispersion fuel ($8gU/cm^3$), were fabricated at the Korea Atomic Energy Research Institute and recently irradiated at HANARO. The PIE (Post-irradiation Examination) results of the HAMP-1 irradiation test were analyzed in depth in order to verify the safe in-pile performance of the U-7Mo/Al-5Si dispersion fuel under the KJRR irradiation conditions. Nondestructive analyses included visual inspection, gamma spectrometric mapping, and two-dimensional measurements of the plate thickness and oxide thickness. Destructive PIE work was also carried out, focusing on characterization of the microstructural behavior using optical microscopy and scanning electron microscopy. Electron probe microanalysis was also used to measure the elemental concentrations in the interaction layer formed between the U-Mo kernels and the matrix. A blistering threshold test and a bending test were performed on the irradiated HAMP-1 miniplates that were saved from the destructive tests. Swelling evaluation of the U-Mo fuel was also conducted using two methods: plate thickness measurement and meat thickness measurement.

• Korean Journal of Optics and Photonics
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• v.31 no.1
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• pp.7-12
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• 2020

In this paper, we experimentally investigate the fiber fuse in single-mode 2-kW-class high-power fiber amplifiers, depending on the cooling method at the splicing point. We measured the temperature of the splicing point between the pump-signal combiner and gain fiber as a function of laser output power. The temperature of the splicing point increased from 20 to 32℃ with a slope of 0.01℃/W, up to 1.2 kW of laser output power. At higher powers the temperature of the splicing point increased dramatically, with a slope of 0.08℃/W. After that, the fiber amplifier was destroyed during operation at 1.96 kW of output power by fiber fuse. The bullet shape, a common feature of fiber fuse, was observed in the damaged passive fiber core of the pump-signal combiner. Later, we adopted an improved water-cooled cold plate to increase the cooling efficiency at the splicing point, and investigated the laser output power. The temperature at the splicing point was 35.8℃ with a temperature-rise slope of 0.007℃/W at the maximum output power of 2.05 kW. The beam quality M² was measured to be less than 1.3, and the output beam's profile was a stable Gaussian shape. Finally, neither fiber fuse nor mode instability was observed in the fiber amplifier at the maximum output power of 2.05 kW.