• Korean Journal of Optics and Photonics
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• v.14 no.4
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• pp.392-398
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• 2003

We present a novel concept of a phase-shifting diffraction-grating interferometer, which is intended for the optical testing of concave mirrors with high precision. The interferometer is configured with a single reflective diffraction grating, which performs multiple functions of beam splitting, beam recombination, and phase shifting. The reference and test wave fronts are generated by means of reflective diffraction at the focal plane of a microscope objective with large numerical aperture, which allows testing fast mirrors with low f-numbers. The fiber-optic confocal design is adopted for the microscope objective to focus a converging beam on the diffractive grating, which greatly reduces the alignment error between the focusing optics and the diffraction grating. Translating the grating provides phase shifting, which allows measurement of the figure errors of the test mirror to nanometer accuracy.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.230-235
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• 2009

Photopolymer is evaluated as better material than the others used for hologram storage, due to many advantages, such as high diffraction efficiency, easy processing, and self-developing. In this study, chalcogenide inorganic compound ($SeO_2$) which has optical activity, was added to polyvinyl alcohol/acrylamide photopolymer films. In order to optimize diffraction efficiency of these photopolymer films, we prepared the photopolymer films with various film thicknesses and Eosin Y content. Diffraction efficiency of the photopolymer films were measured using a 532 nm laser at $40^{\circ}$ incident angle. As a result, the phtopolymer film with Eosin Y content of 0.0045 g and thickness of $297{\mu}m$ showed the highest diffraction efficiency (78.70%).

• Proceedings of the Optical Society of Korea Conference
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• 2008.02a
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• pp.429-430
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• 2008

We demonstrate coherent x-ray diffraction imaging using table-top x-ray laser at a wavelength of 13.9nm driven by 10-Hz ti:Sapphire laser system at the Advanced Photonics Research Institute in Korea. Since the flux of x-ray photons reaches as high as $10^9$ photons/pulse in a $20{\times}20{\mu}m^2$ field of view, we measured a ingle-pulse diffraction pattern of a micrometer-scale object with high dynamic range of diffraction intensities and successfully reconstructed to the image using phase retrieval algorithm with an oversampling ratio of 1:6. the imaging resolution is $^{\sim}150$ nm, while that is much improved by stacking the many diffraction patterns. This demonstration can be extended to the biological sample with the diffraction limited resolution.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.126-130
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• 1990

A single-layer Perceptron with 4x4 input neurons and one output neuron is optically implemented. Holo-graphic lenslet arrays are usee for the programmable optical interconnection topology. The hologram is bleached in order to increase the diffraction efficiency. It is shown that the performance of Perceptron depends on the learning rate, the inertia rate, and the correlation of input patterns.

• Optical Science and Technology
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• v.8 no.2
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• pp.22-26
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• 2004

회절 광학 소자(Diffractive optical element)는 광학 시스템에 있어서 광을 조절하기 위하여 굴절(refraction) 또는 반사(reflection)보다는 주기 구조(periodic structures)에 의한 회절(diffraction)을 이용한 소자라 할 수 있다. DOE의 장점으로는 수차(aberration)가 없는 point-to-point 이미지가 가능하며 광 power를 사용한 평판(flat subface)이 가능하고 비구면과 같은 수차 조절이 가능하다. 단점으로는 HOE(Hologram Optical Element: DOE의 일종)의 수차가 이 구조의 특정 파장에서 나타나고 가시영역의 일정 영역에서 매우 분산적 (dispersive)이다. 또한 상대적으로 시장의 성장에 비하여 찾는 고객의 수가 적다는 점이다.(중략)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.6
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• pp.63-71
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• 1998

In this paper, we experiment the characteristics of coupling coefficient, gain, diffraction efficiency and dependence of time determined by TWM(Two-Wave Mixing), using Fe-LiNbO$_3$ crystal(doped with 0.015Wt.%). From these results, we proposed to apply for optical memory application. The highest coupling angle of 14。 and maximum coupling coefficient of 6.9$cm^{-1}$ / are obtained at 514.5nm wavelength. Also, maximum diffraction efficiency is 54.13% when intensity ratio and writing beam incident angle are 0.1 and 14o, respectively. After fixing process, diffraction efficiency is 21.4%. As an example, we demonstrated the writing and reconstruct optical data using spatial light modualtor and angular multiplexing in most optimal condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.193-196
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• 2001

Single phase $CuInS_2$ thin film with the highest diffraction peak (112) at diffraction angle $(2\theta)$ of $27.7^{\circ}$ and the second highest diffraction peak (220) at diffraction angle $(2\theta)$ of $46.25^{\circ}$ was well made with chalcopyrite structure at substrate temperature of $70^{\circ}C$, annealing temperature of $250^{\circ}C$, annealing time of 60 min. The $CuInS_2$ thin film had the greatest grain size of $1.2{\mu}m$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that $CuInS_2$ thin film was 5.60 A and 11.12 A respectively. Single phase $CuInS_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type $CuInS_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of $CuInS_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type $CuInS_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, $3.0{\times}104cm^{-1}$ and 1.48 eV respectively. When Cu/In composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type $CuInS_2$ thin film was 821 nm, $6.0{\times}10^4cm^{-1}$ and 1.51 eV respectively.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.7-10
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• 2003

Single phase CuInS$_2$ thin film with the strongest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second strongest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$was well made with chalcopyrite structure at substrate temperature of 70$^{\circ}C$. annealing temperature of 250$^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 Um when the Cu/In composition ratio of 1.03, where the lattice constant of a and c were 5.60${\AA}$ and 11.12${\AA}$, respectively. The Cu/In stoichiometry of the single-phase CuInS$_2$thin films was from 0.84 to 1.3. The film was p-type when tile Cu/In ratio was above 0.99 and was n-type when the Cu/In was below 0.95. The fundamental absorption wavelength, absorption coefficient and optical band gap of p-type CuInS$_2$ thin film with Cu/In=1.3 were 837nm, 3.OH 104 cm-1 and 1.48 eV, respectively. The fundamental absorption wavelength absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film with Cu/In=0.84 were 821 nm, 6.0${\times}$10$^4$cm$\^$-1/ and 1.51 eV, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.193-196
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• 2001

Single phase CuInS$_2$ thin film with the highest diffraction peak (112) at diffraction angle (2$\theta$) of 27.7$^{\circ}$ and the second highest diffraction peak (220) at diffraction angle (2$\theta$) of 46.25$^{\circ}$ was well made with chalcopyrite structure at substrate temperature of 70 $^{\circ}C$, annealing temperature of 25$0^{\circ}C$, annealing time of 60 min. The CuInS$_2$ thin film had the greatest grain size of 1.2 ${\mu}{\textrm}{m}$ and Cu/In composition ratio of 1.03. Lattice constant of a and c of that CuInS$_2$ thin film was 5.60 $\AA$ and 11.12 $\AA$ respectively. Single phase CuInS$_2$ thin films were accepted from Cu/In composition ratio of 0.84 to 1.3. P-type CuInS$_2$ thin films were appeared at over Cu/In composition ratio of 0.99. Under Cu/In composition ratio of 0.96, conduction types of CuInS$_2$ thin films were n-type. Also, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of p-type CuInS$_2$ thin film with Cu/In composition ratio of 1.3 was 837 nm, 3.0x10 $^4$ $cm^{-1}$ / and 1.48 eV respectively. When CuAn composition ratio was 0.84, fundamental absorption wavelength, the absorption coefficient and optical energy band gap of n-type CuInS$_2$ thin film was 821 nm, 6.0x10$^4$ $cm^{-1}$ / and 1.51 eV respectively.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.127-128
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• 2007