• 제목/요약/키워드: Optical concentration

검색결과 1,422건 처리시간 0.028초

CWDM 기반 선로 공유 장치 설계 (Line Share Device Design by CWDM)

  • 정병찬;조태경
    • 한국산학기술학회논문지
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    • 제9권1호
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    • pp.87-92
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    • 2008
  • 본 논문은 초고속 통신 사업자가 적은 비용으로 고효율의 광 통신망 구축을 할 수 있는 설계 방안에 대해 제시한다. 하나의 광 코어를 사용하여 다중의 광 신호를 전송할 수 있는 기술인 CWDM과 DWDM기술에 대하여 비교 분석하고, 고속의 데이터의 장거리 전송을 안전하게 할 수 있는 OPTICAL 재생기 기술에 대한 고찰을 통해 장거리 전송에서 나타나는 광 신호의 품질 저하를 TX/RX단의 안정화를 통한 보정에 대해 기술한다. CWDM기반 선로공유장치는 4:1 집선 용 가입자 망을 제공하여 집선 효율이 8배 증가된다.

원심력을 이용한 광통신용 광섬유 모재제조 - 미세입자 크기 및 이동식 injection tube의 영향 - (Fabrication of Optical Fiber Preforms for Optical Communication by Centrifuge - Effects of Fine Particle Sizes and Traversing Injection Tube -)

  • 민동수;김교선;이광래
    • 산업기술연구
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    • 제12권
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    • pp.51-59
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    • 1992
  • In this paper, the technique to fabricate the optical fiber preforms by centrifuge was investigated, using silica particles of different sizes. The injection tube was designed to traverse axially so that uniform coaling of tiny silica particles onto the substrate tube can be certified. The deposition efficiencies and deposition rates of $SiO_2$ particles were measured to elucidate the effects of process variables such as rotation speed of rotor, aqueous flow rate, suspension concentration, binder concentration and overflow weir diameter. This study shows dearly the merit of this technique by enhancing abruptly the deposition rates and deposition efficiencies, comparing to the conventional processes for optical fiber preforms.

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Electrical and Optical Properties of Zinc Oxide Thin Films Deposited Using Atomic Layer Deposition

  • Kim, Jeong-Eun;Bae, Seung-Muk;Yang, Hee-Sun;Hwang, Jin-Ha
    • 한국세라믹학회지
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    • 제47권4호
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    • pp.353-356
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    • 2010
  • Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.

Improved optical design and performances of Amon-Ra instrument energy channel

  • Seong, Se-Hyun;Hong, Jin-Suk;Ryu, Dong-Ok;Park, Won-Hyun;Lee, Han-Shin;Kim, Sug-Whan
    • 한국우주과학회:학술대회논문집(한국우주과학회보)
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    • 한국우주과학회 2010년도 한국우주과학회보 제19권1호
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    • pp.26.1-26.1
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    • 2010
  • In this report, we present newly improved optical design for the Amon-Ra energy channel and its optical performance. The design is optimized parametrically with emphasis on improved light concentration. And then its performances are computed, first, from a laboratory test simulation using laser method (wave optics approach) and, second, from an in-orbit radiative transfer simulation using IRT method with 3D Earth model (geometrical optics approach). Two simulation test results show clear evidence of energy concentration improvement.

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Electro-optical Properties of Twisted Nematic Liquid Crystal Displays Fabricated with TIPS-pentacene Doping

  • Lee, Jin-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제14권2호
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    • pp.82-85
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    • 2013
  • This paper introduces 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene) doped liquid crystal (LC) alignment properties on a rubbed polyimide (PI) layer as a function of the doping concentration of TIPS pentacene. Pretilt angles, photomicrographs, and electro-optical properties of TIPS pentacene doped LCs were comparable to those of pure LCs. However, TIPS pentacene in a LC medium supported twisted nematic-liquid crystal displays (TN-LCDs) to improve electro-optical properties. The threshold voltages observed in the TN cells decreased as the TIPS pentacene concentration increased. In addition, suitable response times were observed in TN cells.

Atomization 방법을 이용한 PbTe quantum dots이 함유된 비선형 광섬유의 제조 및 광특성 (Fabrication of Nonlinear Optical Fiber Doped with PbTe Quantum Dots Using Atomization Doping Process and its Optical Property)

  • 주성민;이수남;김택중;한원택
    • 한국광학회:학술대회논문집
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    • 한국광학회 2004년도 제15회 정기총회 및 동계학술발표회
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    • pp.360-361
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    • 2004
  • An atomization doping process is proposed to manufacture nonlinear optical fiber containing higher concentration of PbTe nano-particles in the core of the fiber than that by the conventional solution doping process. The absorption peaks appeared near 725nm, 880nm, and 1050nm are attributed to the PbTe quantum dots in the fiber core.

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파장 분할 다중화에 적용가능한 고농도 알루미늄이 포함된 에르븀첨가광섬유의 제조 (The Ffabrication of Erbium Doped Fiber with High Al-concentration for Wavelength Division Multiplexing)

  • 전정우;서한?;조윤희;고석봉;정기태;최성일;최봉수
    • 한국광학회:학술대회논문집
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    • 한국광학회 1997년도 Advance Program of 14th optics andquantum Electronics conference, 1997제14 회 광학 및 양자전자 학술 발표회 논문 요약집
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    • pp.24-24
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    • 1997
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펄스 레이저 방법으로 증착된 투명 산화물 전극용 인듐이 도핑된 ZnO:Al 박막 (Indium doped ZnO:Al thin films prepared by pulsed laser deposition for transparent conductive oxide electrode applications)

  • 함성길;이창현;이예나;성낙진;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.27-27
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    • 2008
  • The different concentration Indium doped ZnO:Al films were grown on glass substrates (Corning 1737) at $200^{\circ}C$ by pulsed laser deposition. The indium doping in AZO films shows the critical effect on the crystallinity, resistivity, and optical properties of the films. The AZO films doped with 0.3 atom % indium content exhibit the highest crystallinity, the lowest resistivity of $4.5\times10^{-4}\Omega$-cm, and the maximum transmittance of 93%. The resistivity of the indium doped-AZO films is strongly related with the crystallinity of the films. The carrier concentration in the indium doped-AZO films linearly increases with increasing indium concentration. The mobility of the AZO films with increasing indium concentration was reduced with an increase in carrier concentration and the decrease in mobility was attributed to the ionized impurity scattering mechanism. In an optical transmittance, the shift of the optical absorption edge to shorter wavelength strongly depends on the electronic carrier concentration in the films.

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