• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.408.2-409
• /
• 2016

Theoretically, the dye-sensitized solar cells (DSSCs) are high efficiency solar cells. However DSSCs have low power conversion efficiency (PCE) than silicon based solar cells. In this study, we use the phosphor materials, such as $Y_2O_3:Eu$ (Red), $Zn_2SiO_4:Mn$ (Green), $BaMgAl_{14}O_{23}:Eu$ (Blue), to enhance the PCE of DSSCs. Three phosphors were prepared and used as an effective scattering layer on the transparent $TiO_2$ with doctor blade method. We confirmed that the three scattering layers improve the PCE and Jsc due to the light harvesting enhancement via increased the scattering and absorbance in visible range. Under the sun illumination AM 1.5 conditions, the PCE of the mesoporous $TiO_2$ based DSSCs is 5.18 %. The PCE of the DSSCs with Y2O3:Eu, $Zn_2SiO_4:Mn$ and $BaMgAl_{14}O_{23}:Eu$ as scattering layer were enhanced to 5.66 %, 5.72% and 5.82%, respectably. In order to compare the optical properties change, DSSCs were measured by EQE, reflectance and PCE. At the same time, FE-SEM and XRD were used to confirm the structural changes of each layer.

• Journal of the Korean Vacuum Society
• /
• v.10 no.2
• /
• pp.213-218
• /
• 2001

ZnO and ZnO:In films were deposited on the glass substrates by a spray pyrolysis method. It is found that ZnO films were polycrystalline with the preferred orientation (002) and have a hexagonal structure with lattice constants of a=3.242 $\AA$ and c=5.237 $\AA$. The crystalline structure of ZnO:In films deposited at the In content of 0~6.03 at. % were the same as that of ZnO films, but its lattice constants was slightly larger than those of ZnO films. The relative atomic ratios of metal ion of ZnO:In films were in accordance with those of the spray solution within the experimental error. The minimum resistivity of and the maximum carrier concentration of 19.1 $\Omega\cdot\textrm{cm}$ and the maximum carrier concentration of $2.11\times10^{19}\textrm{cm}^{-3]$ obtained from the ZnO:In films when In content was 2.76 at. %. The optical transmission of the sample grown at the In content of 3.93 at. % was about 95% in the wavelength between 400 and 800 nm.

• Korean Journal of Materials Research
• /
• v.5 no.7
• /
• pp.869-879
• /
• 1995

TiAi intermetallic compound has been extensively studied for possible high temperature structural applications because of its high specific strength at high temperature, high creep resistance, and good oxidation resistance at elevated temperatures. In addition to its good properties, an economic manufacturing routes should be developed for this material to be used more extensively. One of the promising route in manufacturing TiAl intermetallics is the Self-propagating High-temperature Synthesis (SHS) method. Thus in this study, an attempt was made to study the mechanism of the SHS process in TiAl synthesis. The composition of the sample was Ti-(45, 50, 53)at% Al and the microstuctures of the products were analyzed using optical microscope and scanning electron microscope. When the phases formed at the main SHS reaction of whicyh combustion temperature is higher than the melting temperature of aluminum were identified as TiAl and Ti$_3$Al ; Ti$_3$Al cores surrounded by TiAl phase. In order to increase the combustion temperature, carbon was added 5 and 10at.%. When the carbon content was 10at.%, the heat of the reaction was large enough to melt the phase formed and that is consistent with the theoretical calculation results of the adiabatic temperature. The combution temperatue, which was measured by a computer data acquisition system, increased with the carbon content. The phases formed from the reaction involving the carbon added were indentified as TiAl and Ti$_2$AlC using XRD. The vickers hardness of the reaction product increased with the carbon content.

• Current Photovoltaic Research
• /
• v.4 no.4
• /
• pp.150-154
• /
• 2016

Mg and In co-doped ZnO (MIZO) thin films with transparent conducting characteristics were successfully prepared on glass substrates by RF magnetron sputtering technique. The Influence of different substrate temperature (from RT to $400^{\circ}C$) on the structural, morphological, electrical, and optical properties of MIZO thin films were investigated. The MIZO thin film prepared at the substrate temperature of $350^{\circ}C$ showed the best electrical characteristics in terms of the carrier concentration ($4.24{\times}10^{20}cm^{-3}$), charge carrier mobility ($5.01cm^2V^{-1}S^{-1}$), and a minimum resistivity ($1.24{\times}10^{-4}{\Omega}{\cdot}cm$). The average transmission of MIZO thin films in the visible range was over 80% and the absorption edges of MIZO thin films were very sharp. The bandgap energy of MIZO thin films becomes wider from 3.44 eV to 3.6 eV as the substrate temperature increased from RT to $350^{\circ}C$. However, Band gap energy of MIZO thin film was narrow at substrate temperature of $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.106-106
• /
• 2011

Recently, zinc oxide (ZnO) thin films have attracted great attention as a promising candidate for various electronic applications such as transparent electrodes, thin film transistors, and optoelectronic devices. ZnO thin films have a wide band gap energy of 3.37 eV and transparency in visible region. Moreover, ZnO thin films can be deposited in a poly-crystalline form even at room temperature, extending the choice of substrates including even plastics. Therefore, it is possible to realize thin film transistors by using ZnO thin films as the active channel layer. In this work, we investigated influence of oxygen partial pressure on ZnO thin films and fabricated ZnO-based thin film transistors. ZnO thin films were deposited on glass substrates by using a pulsed laser deposition technique in various oxygen partial pressures from 20 to 100 mTorr at room temperature. X-ray diffraction (XRD), transmission line method (TLM), and UV-Vis spectroscopy were employed to study the structural, electrical, and optical properties of the ZnO thin films. As a result, 80 mTorr was optimal condition for active layer of thin film transistors, since the active layer of thin film transistors needs high resistivity to achieve low off-current and high on-off ratio. The fabricated ZnO-based thin film transistors operated in the enhancement mode with high field effect mobility and low threshold voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.755-759
• /
• 2011

$Cu(In_{1-x},Ga_x)Se_2$ thin films have been considered as an effective absorber material for high efficient solar cells. In this paper, the CIGS thin films with varied Ga content were prepared using a co-evaporation process of three stage. We carry out structure and electrical optical property on the thin film in varied Ga content. CIGS thin films have been characterized by X-ray diffraction(XRD), scanning electron microscopy(SEM), energy-dispersive spectroscopy(EDS), four-point probe measurement, and the Hall measurement. To optimize Ga contents, Ga/(In+Ga) ratio were changed from 0.13 to 0.72. At this time the carrier concentrations were varied from $1.22{\times}10^{11}\;cm^{-3}$ to $5.07{\times}10^{16}\;cm^{-3}$, and electrical resistivity were varied from $1.11{\times}10^0\;{\Omega}-cm$ to $1.08{\times}10^2\;{\Omega}-cm$. A strong <220/204> orientation and a lager grain size were obtained at a Ga/(In+Ga) of 0.3. We were able to achieve conversion efficiency as high as 15.95% with a Ga/(In+Ga) of 0.3.

• Journal of the Korean Vacuum Society
• /
• v.2 no.2
• /
• pp.220-226
• /
• 1993

An investigation was made of the dependences of the lattice constants and the energy gap on the composition of $TlGa_xIn_{1-x}Se_2$ single cystals grown by Bridgman method. It was found that a discontinuity in $TlGa_xIn_{1-x}Se_2$ solid solutions occurred in the composition range 0.25$0.0{\leq}X{\leq}0.25$) to the monoclinic structure ($0.65{\leq}X{\leq}1.0$) was observed in this composition range. The temperature dependences of the energy gap and the dielectric constant in $TlGaSe_2$ single crystal have shown that the anomalies appeared at 107 K and 120 K corresponding to first-order and second-order phase transitions, respectively.

• Journal of the Korean Vacuum Society
• /
• v.16 no.4
• /
• pp.267-272
• /
• 2007

Al-doped ZnO (AZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering. The effects of oxygen flow ratio, which was used for a sputtering gas, on the AZO thin films were investigated by using the X-ray diffraction (XRD), atomic force microscopy (AFM), and Hall effects measurement. The AZO thin film, deposited with oxygen flow ratio of 0% at the growth temperature of $400^{\circ}C$, showed a strongly c-axis preferred orientation and the lowest resistivity of $6.9{\times}10^{-4}{\Omega}cm$. The ZnO (002) diffraction peak indicated a tendency to decrease substantially with increasing the oxygen flow ratio. Furthermore, as the oxygen flow ratio was decreased, the carrier concentration and the hall mobility were increased, but the electrical resistivity was decreased.

• Korean Chemical Engineering Research
• /
• v.50 no.1
• /
• pp.72-75
• /
• 2012

In our experiments, strain-free nanowires(NWs) were dispersed on to the substrate, followed by e-beam lithography(EBL) to fabricate single nanowire ultraviolet(UV) sensor devices. Focused-ion beam(FIB), micro-Raman spectroscopy and photoluminescence were employed to characterize the structural and optical properties of AlGaN/GaN NWs. Also, I-V characteristics were obtained under both dark condition and UV lamp to demonstrate AlGaN/GaN NW-based UV sensors. The conductance of a single AlGaN/GaN UV sensor was 9.0 ${\mu}S$(under dark condition) and 9.5 ${\mu}S$ (under UV lamp), respectively. The currents were enhanced by excess carriers under UV lamp. Fast saturation and decay time were demonstrated by the cycled processes between UV lamp and dark condition. Therefore, we believe that AlGaN/GaN NWs have a great potential for UV sensor applications.

• Current Photovoltaic Research
• /
• v.2 no.3
• /
• pp.88-94
• /
• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.