Abstract
ZnO and ZnO:In films were deposited on the glass substrates by a spray pyrolysis method. It is found that ZnO films were polycrystalline with the preferred orientation (002) and have a hexagonal structure with lattice constants of a=3.242 $\AA$ and c=5.237 $\AA$. The crystalline structure of ZnO:In films deposited at the In content of 0~6.03 at. % were the same as that of ZnO films, but its lattice constants was slightly larger than those of ZnO films. The relative atomic ratios of metal ion of ZnO:In films were in accordance with those of the spray solution within the experimental error. The minimum resistivity of and the maximum carrier concentration of 19.1 $\Omega\cdot\textrm{cm}$ and the maximum carrier concentration of $2.11\times10^{19}\textrm{cm}^{-3]$ obtained from the ZnO:In films when In content was 2.76 at. %. The optical transmission of the sample grown at the In content of 3.93 at. % was about 95% in the wavelength between 400 and 800 nm.
분무열분해법으로 유리기판 위에 ZnO와 ZnO:In 박막을 성장시켰다. 성장된 ZnO 박막은 hexagonal 구조를 이루고, 격자상수 a=3.242 $\AA$, c=5.237 $\AA$였고, (002) 방향으로 선택 성장되었다. In을 0~6.03 at. % 불순물로 첨가하여 성장시킨 ZnO:In박막은 ZnO 박막의 결정구조와 같고 격자상수가 약간 증가하였다. ZnO:In 박막의 금속 이온의 비는 분무용액의 금속 이온의 비와 거의 일치하였다. ZnO:In 박막의 최소 비저항과 최대 운반자 농도는 In를 2.76 at % 불순물로 첨가하여 성장시킨 경우였는데, 그 값은 각각 19.1 $\Omega\cdot\textrm{cm}$, $2.11\times10^{19}\textrm{cm}^{-3]$이었다. In를 3.93 at. % 불순물로 첨가하여 성장시킨 ZnO:In 박막 경우 400~800 nm 영역에서의 광투과율은 95% 이상이었다.