• Title/Summary/Keyword: Optical and structural properties

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Synthesis of Cobalt Oxide Film by Thermal Decomposition for Potential Various Applications

  • Han, Seong Ho;Park, Bo Keun;Son, Seong Uk;Kim, Chang Gyoun;Chung, Taek-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.365.1-365.1
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    • 2014
  • Cobalt oxide has excellent various properties such as high catalytic activity, antiferromagnetism, and electrochromism. So cobalt oxides offer a great potential for their applications in the various areas such as optical gas sensor, catalysts for oxidation reaction, electrochromic devices, high temperature solar selective absorbers, magnetic materials, pigment for glasses and ceramics, and negative electrodes for lithium-ion batteries. We have synthesized novel cobalt complexes by simple reaction of cobalt bistrimethylsilylamide as a starting material with a lot of conventional ligands as potential cobalt oxide precursors. The studies include the facile preparation, structural characterization, and spectroscopic analysis of the new precursors. We are making efforts to grow cobalt oxide thin films using cobalt complexes newly synthesized in this study using deposition techniques.

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Optical Properties of Porous-Si Layers on Si-substrate and its Application of Polarization Devices (Porous Si layer의 광학특성과 편광소자에의 응용)

  • Koo, K.W.;Hwang, J.H.;Shiraishi, K.;Matsumura, K.
    • Proceedings of the KIEE Conference
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    • 1999.07e
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    • pp.2453-2455
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    • 1999
  • We propose that we use a porous-Si for a new spatial walk-off polarizing material with a large split angle. The beam-split an91e f is determined by the filling factor g(or porosity p) of the columnar dielectric substance and the slant angle $\theta$. Theoretically, by the assuming that $n_2$=3.5, and $n_1$=1 one can predict that a large split angle, up to $27^{\circ}$, is possible if one can construct such films with $Si.^{[3]}$ To accomplish this, we use porous-Si. As a result of theoretical simulation, the best structural parameters for attaining the maximum split angle $\phi$=$27.5^{\circ}$ are $\theta$=$58.7^{\circ}$ and p=57.6%.

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Facile Hydrothermal Synthesis and Characterization of the $CeO_2$ Nanorings

  • Arul, N. Sabari;Kim, Tae Whan;Mangalaraj, Devanesan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.455-455
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    • 2013
  • $CeO_2$ nanorings were synthesized by using a surfactant free hydrothermal method. The surface morphology, structural and optical properties of the synthesized $CeO_2$ was investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet-visible (UV) spectroscopy measurements. SEM images showed that the surface morphology of the formed $CeO_2$ appeared as nanorings. The XRD pattern of $CeO_2$ nanorings showed the presence of the polycrystalline $CeO_2$ phase readily indexed to the cubic fluorite structure of the $CeO_2$. The mean crystallite size of the $CeO_2$ was calculated using the Scherrer equation from the XRD line broadening of the (111) planes of the cubic $CeO_2$. The UV-Visible spectroscopy spectrum of the $CeO_2$ nanorings exhibited a strong UV absorption band around 350 nm.

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Synthesis and VUV Photoluminescence Characterization of a Tb-activated LiGd$(PO_3)_4$

  • Tae, Se-Won;Choi, Sung-Ho;Hur, Nam-Hoe;Jung, Ha-Kyun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1283-1286
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    • 2009
  • The structural and optical properties on $Tb^{3+}$ addition into LiGd$(PO_3)_4$ compound were investigated by X-ray powder diffraction and photoluminescence spectroscopy. The emission spectrum shows the strongest peak corresponding to the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ at 546 nm under 147 nm and 173 nm excitation. 85 mol% concentration of $Tb^{3+}$ for LiGd$(PO_3)_4$ is much higher than other Tb-doped phosphors.

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Effect of Laser Beam on Structural, Optical, and Electrical Properties of BaTiO3 Nanoparticles during Sol-Gel Preparation

  • Mostafa, Massaud;Ebnalwaled, Khaled;Saied, Hussien A.;Roshdy, Reham
    • Journal of the Korean Ceramic Society
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    • v.55 no.6
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    • pp.581-589
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    • 2018
  • This work concentrated on the effect of different laser beams on the microstructure and dielectric properties of $BaTiO_3$ nanoparticles at different calcinations times during the gelling preparation step. The nanoparticles were prepared by the sol-gel method. A green (1000 mW, 532 nm) and red laser beam (500 mW, 808 nm), were applied vertically at the center of stirring raw materials. The samples were sintered at $1000^{\circ}C$ for 2, 4, and 6 h. X-ray diffraction (XRD) analysis showed that samples prepared under the green laser have the highest purity. The FT-IR spectra showed that the stretching and bending vibrations of TiO bond without any other bonds, which are compatible to the X-ray diffraction (XRD) results. Samples were characterized by transmission electron microscopy (TEM), Scan electron microscopy (SEM), and UV-Visible spectrophotometer. Characterization showed the samples prepared under the green laser to have the highest particle size (~ 50 nm) and transparency for all sintering durations. Laser beam effects on electrical characterization were studied. BT nanoparticles prepared under the green laser show the higher dielectric constant, which was found to increase with sintering temperature.

Fabrication and Evaluation of Chalcogenide Glass for Molding (몰드성형용 GeSbSe계 칼코게나이드 유리 제작 및 특성 분석)

  • Park, Heung-Su;Cha, Du-Hwan;Kim, Hye-Jeong;Kim, Jeong-Ho;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.2
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    • pp.135-139
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    • 2012
  • In this study, we synthesized the chalcogenide glass($Ge_{19}Sb_{23}Se_{58}$) for infrared optics by meltquenching method and verified the effect of cooling condition on the glass properties. The structural and optical properties of the glass were analyzed by XRD, FT-IR and SEM image. The glass synthesized under the cooling temperature of $980^{\circ}C$ shows transmittance of 58% at $8\sim12{\mu}m$, which was decreased as the cooling temperature was decreased. In addition, thermal and hardness also were measured. From the analysis results, we ascertained the feasibility as a molding materials for infrared optics.

Structural and Electrical Properties of WOx Thin Films Deposited by Direct Current Reactive Sputtering for NOx Gas Sensor

  • Yoon, Young-Soo;Kim, Tae-Song;Park, Won-Kook
    • Journal of the Korean Ceramic Society
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    • v.41 no.2
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    • pp.97-101
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    • 2004
  • W $O_{x}$-based semiconductor type thin film gas sensor was fabricated for the detection of N $O_{x}$ by reactive d.c. sputtering method. The relative oxidation state of the deposited W $O_{x}$ films was approximately compared by the calculation of the difference of the binding energy between Ols to W4 $f_{7}$2/ core level XPS spectra in the standard W $O_3$ powder of known composition. As the annealing temperature increased from 500 to 80$0^{\circ}C$, relative oxygen contents and grain size of the sputtered films were gradually increased. As the results of sensitivity ( $R_{gas}$/ $R_{air}$) measurements for the 5 ppm N $O_2$ gas, the sensitivity was 110 and the sensor showed recovery time as fast as 200 s. The other sensor properties were examined in terms of surface microstructure, annealing temperature, and relative oxygen contents. These results indicated that the W $O_3$ thin film with well controlled structure is a good candidate for monitoring and controlling of automobile exhaust.haust.t.t.t.

Properties of Phosphorus Doped ${\mu}c$-Si:H Thin Films Prepared by PECVD (PECVD에 의하여 제조된 Phosphorus-Doped ${\mu}c$-Si:H 박막의 특성)

  • Lee, J.N.;Moon, D.G.;Ahn, B.T.;Im, H.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1992.11a
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    • pp.22-27
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    • 1992
  • Phosphorus doped hydrogenated microcrystalline silicon (${\mu}c$-Si:H) thin films were deposited by PECVD (Plasma Enhanced Chemical Vapour Deposition) method using 10.2% $SiH_4$ gas (diluted in Ar) and 308ppm $PH_3$ gas (diluted in Ar). The structural, optical and electrical properties of the films were investigated as a function of substrate temperature(15 to $400^{\circ}C$) and RF power(10 to 120W). The thin film deposited by varing substrate temperature had columnar structure and microcrystalline phase. The volume fraction of microcrystalline phase in the films deposited at RF power of 80W, increased with increasing substrate temperature up to $200^{\circ}C$, and then decreased with further increasing substrate temperature. Volume fraction of microcrystalline phase increased monotonously with increasing RF power at substrate temperature of $250^{\circ}C$. With increasing volume fraction of microcrystalline, electrical resistivity of films decreased to 0.274 ${\Omega}cm$.

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Synthesis and Characterization of Bandgap-modulated Organic Lead Halide Single Crystals

  • Park, Dae Young;Byun, Hye Ryung;Lee, A Young;Choi, Ho Min;Lim, Seong Chu;Jeong, Mun Seok
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1716-1724
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    • 2018
  • Single crystal of organic lead halide ($CH_3NH_3PbX_3$; $CH_3NH^+_3$ = methylammonium (MA), $X=Cl^-$, $Br^-$, $I^-$) is the best candidate for material intrinsic property studies due to no grain boundary and high crystal quality than the film having a lot of grain boundary and surface defects. The representative crystallization methods are inverse temperature crystallization (ITC) and anti-solvent vapor assisted crystallization (AVC). Herein, we report bandgap modulated organic lead halide single crystals having a bandgap ranging from ~ 2.1 eV to ~ 3 eV with ITC and AVC methods. The bandgap modulation was achieved by controlling the solvents and chloride-to-bromide ratio. Structural, optical and compositional properties of prepared crystals were characterized. The results show that the crystals synthesized by the two crystallization methods have similar properties, but the halide ratios in the crystals synthesized by the AVC method are controlled more quantitatively than the crystals synthesized by ITC.

저온공정에서 제작한 ZnO:Al 박막의 특성 분석

  • Jung, Yu-Sup;Kim, Sang-Mo;Hong, Jung-Soo;Son, In-Hwan;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.201-202
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    • 2009
  • ZnO:Al transparent conductive films for solar cells were deposited on the glass substrates at room temperature by facing target sputtering (FTS) method. The sputtering targets were 100 mm diameter disks of 2w.t..%. AZO and Zn metal. ZnO:Al thin films were deposited as a function film thickness. A base pressure was $2{\times}10^{-6}$torr, and a working pressure was 1mTorr. The properties of thin films on the structural, electrical and optical properties of the deposited films were investigated using a four-point probe (Chang-min), an X-ray diffraction (Rigaku), a Hall Effect measurement (Ecopia), an UV/VIS spectrometer (HP) and a $\alpha$-step (Tencor). The lowest resistivity of film was $5.67{\times}10^{-4}[{\Omega}-cm]$ at 500nm. The average transmittance of over 80% was seen in the visible range.

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