• Journal of Surface Science and Engineering
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• v.41 no.4
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• pp.142-146
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• 2008

Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of $300^{\circ}C$. We used the different three types of high density($95%{\sim}$) ceramic sintered disks(doped with $Ga_2O_3$; 6.65 wt%, $Al_2O_3$; 3.0 wt%, $In_2O_3$; 9.54 wt%). This study examined the effect of different dopants(Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of $5.14{\times}10^{-4}{\Omega}cm$ and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO(GZO) film. All the films had a preferred orientation along the(002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.

• Applied Science and Convergence Technology
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• v.27 no.5
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• pp.95-99
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• 2018

We discuss the structural and optical characteristics of GaN nanowires (NWs) grown on Si(111) substrates by a plasma-assisted molecular-beam epitaxy. The GaN NWs with high crystal quality were formed by adopting a new growth approach, so called Ga pre-deposition (GaPD) method. In the GaPD, only Ga was supplied without nitrogen flux on a SiN/Si surface, resulting in the formation of Ga droplets. The Ga droplets were used as initial nucleation sites for the growth of GaN NWs. The GaN NWs with the average heights of 60.10 to 214.62 nm obtained by increasing growth time. The hexagonal-shaped top surfaces and facets were observed from the field-emission electron microscope images of GaN NWs, indicating that the NWs have the wurtzite (WZ) crystal structure. Strong peaks of GaN (0002) corresponding to WZ structures were also observed from double crystal x-ray diffraction rocking curves of the NW samples. At room temperature, free-exciton emissions were observed from GaN NWs with narrow linewidth broadenings, indicating to the formation of high-quality NWs.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.475-479
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• 2007

Pulsed laser deposition was utilized to grow MnS thin films on c-sapphire substrate using a KrF excimer laser at growth temperatures that ranged from room temperature to $700^{\circ}C$. The results of X-ray diffraction (XRD) and UV-visible spectroscopy were employed to investigate the structural and optical properties of the MnS films. While the growth rate decreased as $T_s$ increased, the overall quality of the film improved. The highest quality MnS film was obtained at $700^{\circ}C$. Variations in the $T_s$ resulted in the MnS films exhibiting different growth mechanisms. The oriented (200) rocksalt MnS film was grown at room temperature. In the case of higher $T_s,\;200{\sim}500^{\circ}C$, the films consisted of mixed phases of rocksalt and wurtzite. The main structure of the films was altered to (111) rocksalt when the temperature was increased to in excess of $600^{\circ}C$. This behavior may very well be the result of elements such as surface energy and atomic arrangement during the growth process. The optical band gap of the obtained ${\alpha}-MnS$ film was estimated to be 3.32 eV.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.211-216
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• 2011

In this study, the effects of growth temperature on structural and optical properties of hydrothermally grown ZnO nanorod arrays have been investigated. Zinc nitrate ($Zn(NO_3)_2$) and hexamethylenetetramine were used as precursors. The ZnO buffered Si(100) with a thickness of 40 nm was used as the substrates. The ZnO nanorods were grown on these substrates with the temperature ranging from 55 to $115^{\circ}C$. The results were characterized by scanning electron microscope, X-ray diffraction and room temperature photoluminescence measurements. Well-aligned ZnO nanorods arrays were obtained from all samples. The tips of nanorods were flat when the temperature was less than $95^{\circ}C$, and the sharp-tip nanoneedle-like morphologies were obtained with the temperature of $115^{\circ}C$. In addition, some bundles were on the nanorods arrays with $115^{\circ}C$ due to the non-equilibrium growth. The growth temperature could affect the crystal and optical properties of ZnO. For the effects on crystal properties, the intensity of (002) peak was increased as the temperature was increased to $75^{\circ}C$, then decreased as the temperature was further increased to $115^{\circ}C$. As for the effects on optical properties, the intensity ratio of UV peak to visible peak is increased with the temperature increasing and the strongest UV peak intensity was obtained with the growth temperature of $95^{\circ}C$.

• Journal of Advanced Navigation Technology
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• v.24 no.6
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• pp.465-470
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• 2020

Complex materials are widely used in aviation industries where lightweighting is essential because they have lighter properties than metals. However, composite materials can cause defects such as internal void formation, poor adhesive mixing, and non-adhesive parts during the production process, and there is a risk of micro-cracking and interlayer separation due to low energy impact. Therefore, a structural damage test is essential. As a result, structural integrity monitoring using FBG is drawing attention. Compared to conventional electrical sensors, FBG has the advantage of being more corrosion-resistant and multiplexed without being affected by electrical noise. However, interloggers measuring FBG are expensive and have a large disadvantage because they are made on the premise of measuring large structures. In this paper, low-cost interloggers were designed for use in unmanned or small aircraft using optical switche, WDM filter, and LTFs, and compared to conventional high-priced interrogator.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.40-45
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• 2008

We present the effect of Ga-doping on the electrical, structural and optical properties of ZnO layers with a thickness of ${\sim}500nm$ deposited on glass substrates. Polycrystalline ZnO and Ga-doped ZnO (GZO) layers were deposited by radio frequency (rf) magnetron sputtering at room temperature. Based on the X-ray diffraction (XRD) and transmission electron microscopy (TEM) data, the crystalline quality of Ga-doped ZnO film was improved and GZO film has a preferred orientation along with the (002) crystal direction. The transmittance of the GZO film was enhanced by 10% in the visible region from that of the ZnO film. From photoluminescence (PL) data, the ratio of intensity of near band edge (NBE) emission to deep level (DL) emission was as high as 2.65:1 and 1.27:1 in the GZO and ZnO films, respectively. The res istivities of GZO and ZnO films were measured to be 1.27 and 1.61 $\Omega{\cdot}cm$, respectively. The carrier concentrations of ZnO and GZO film were approximately 1018 and 1020 $cm^2$/Vs, respectively. Based on our experimental results, the Ga-doping improves the electrical, structural and optical properties of ZnO film with potential application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.138-143
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• 2002

In this study, ZnS: Cu nano-crystals are synthesized by solution synthesis technique (SST). The structural properties such as crystal structure and particle morphology, and the optical properties such as light absorption/transmittance, energy bandgap, and photoluminescence (PL) excitation/emission are investigated. In an attempt to realize the Cu-doping easiness, the synthesis temperature (~$80^{\circ}C$) is applied to the synthesis bath, and the thiourea is used as sulfur precursor, unlike other general chemical synthesis route. Both undoped ZnS and ZnS : Cu nano-crystals have the cubic crystal structure and have the spherical particle shape. The position of light absorption edge is ~305 nm, indicating the occurrence of quantum size effect. The PL emission intensity and line-width are maximum and minimum, respectively, for Cu-doping concentration 0.03M. In particular, the dependence of PL intensity and line-width on the Cu-doping concentration for ZnS : Cu nano-crystals synthesized by SST is reported for the first time in this study. Experimental results of the absorption edge and the PL excitation show that the main emission peak of ZnS : Cu nano-crystals (~510 nm) in this study is due to the radiative recombination center in the energy bandgap induced by Cu dopant.

• Structural Engineering and Mechanics
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• v.80 no.5
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• pp.563-583
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• 2021

Composite materials, composed of multiple constituent materials with dissimilar properties, are actively adopted in a wide range of industrial sectors due to their remarkable strength-to-weight and stiffness-to-weight ratio. Nevertheless, the failure mechanism of composite materials is highly complicated due to their sophisticated microstructure, making it much harder to predict their residual material lives in real life applications. A promising solution for this safety issue is structural damage detection. In the present paper, damage detection of composite material via electrical resistance-based technique and infrared thermography is reviewed. The operating principles of the two damage detection methodologies are introduced, and some research advances of each techniques are covered. The advancement of IR thermography-based non-destructive technique (NDT) including optical thermography, laser thermography and eddy current thermography will be reported, as well as the electrical impedance tomography (EIT) which is a technology increasingly drawing attentions in the field of electrical resistance-based damage detection. A brief comparison of the two methodologies based on each of their strengths and limitations is carried out, and a recent research update regarding the coupling of the two techniques for improved damage detection in composite materials will be discussed.

• Transactions on Electrical and Electronic Materials
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• v.7 no.1
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• pp.36-41
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• 2006

In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

• Journal of the Korean Applied Science and Technology
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• v.30 no.3
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• pp.461-471
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• 2013

Use of low bandgap polymers is the most suitable way to harvest a broader spectrum of solar radiations for solar cells. But, still there is lack of most efficient low bandgap polymer. In order to solve this problem, we have synthesised a new low bandgap polymer and investigated its interaction with the ILs to enhance its conductivity. ILs may undergo almost unlimited structural variations; these structural variations have attracted extensive attention in polymer studies. In addition to this, UV-Vis spectroscopy, confocal Raman spectroscopy and FT-IR spectroscopy results have revealed that all studied ILs (tributylmethylammonium methyl sulfate [$N_{1444}$][$MeSO_4$] from ammonium family) and 1-methylimidazolium chloride ([MIM]Cl, and 1-butyl-3-methylimidazolium chloride [Bmim]Cl from imidazolium family) has potential to interact with polymer. Further, protic ILs shows enhanced conductivity than aprotic ILs with low bandgap polymer. This study provides the combined effect of low bandgap polymer and ILs that may generate many theoretical and experimental opportunities.