• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.145-145
• /
• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• Journal of the Microelectronics and Packaging Society
• /
• v.30 no.3
• /
• pp.20-34
• /
• 2023

Single or multi-layered two-dimensional (2D) materials, with thicknesses in the order of a few nanometers, have garnered substantial attention across diverse research domains owing to their distinct properties, including electrical conductivity, flexibility, and optical transparency. These materials are frequently subjected to repetitive mechanical actions in applications like electronic skin (E-Skin) and smart textiles. Moreover, they are often exposed to external factors like temperature, humidity, and pressure, which can lead to a deterioration in component durability and lifespan. Consequently, significant research efforts are directed towards developing self-healing properties in these components. Notably, recent investigations have revealed promising outcomes in the field of self-healing composite materials, with Ti₃Ci₂Ti_x MXene being a prominent component among the myriad of available 2D materials. In this paper, we aim to introduce various synthesis methods and characteristics of Ti₃Ci₂Ti_x MXene, followed by an exploration of self-healing application technologies based on Ti₃Ci₂Ti_x MXene.

• Journal of the Korean Vacuum Society
• /
• v.19 no.3
• /
• pp.224-229
• /
• 2010

Indium oxide $(In_2O_3)$ thin films have been prepared on glass substrate by using radio-frequency reactive magnetron sputtering with changing the oxygen flow ratio. The substrate temperature was kept at a fixed value of $400^{\circ}C$, and the sputtering gas and reactive gas were supplied with argon and oxygen, respectively. The oxygen partial flow ratio was varied by controlling the amount of oxygen with respect to the total mixed gases, 10%, 20%, 30%, 40%, and 50%. The optical, electrical, and structural properties of the deposited thin films were investigated by using ultraviolet-visible-near infrared spectrophotometer, Hall measurement, and X-ray diffractometer and scanning electron microscopy. The $In_2O_3$ thin film deposited at 20% of oxygen flow ratio showed an average transmittance of 86% in the wavelength range of 430~1,100 nm, an electrical resistivity of $1.1{\times}10^{-1}{\Omega}cm$. The results show that the transparent conducting films with optimum conditions can be achieved by controlling the oxygen flow ratio.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2018.06a
• /
• pp.142.2-142.2
• /
• 2018

One-dimensional metal oxide nanostructures have attracted considerable research activities owing to their strong application potential as components for nanosize electronic or optoelectronic devices utilizing superior optical and electrical properties. In which, semiconducting $SnO_2$ material with wide-bandgap Eg = 3.6 eV at room temperature, is one of the attractive candidates for optoelectronic devices operating at room temperature [1, 2], gas sensor [3, 4], and transparent conducting electrodes [5]. The synthesis and gas sensing properties of semiconducting $SnO_2$ nanomaterials have become one of important research issues since the first synthesis of SnO2 nanowires. In this study, $SnO_2$ nanowire networks were synthesized on a basis of a two-step process. In step 1, Sn spheres (30-800 nm in diameter) embedded in $SiO_2$ on a Si substrate was synthesized by a chemical vapor deposition method at $700^{\circ}C$. In step 2, using the source of these Sn spheres, $SnO_2$ nanowire (20-40 nm in diameter; $1-10{\mu}m$ in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at $800^{\circ}C$. The Au layers were pre-deposited on the surface of Sn spherical and subsequently oxidized Sn surface of Sn spherical formed SnO2 nanowires networks. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that $SnO_2$ nanowires are single crystalline. In addition, the $SnO_2$ nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the $NO_2$ sensing properties of the $SnO_2$ network nanowires sensor at an operating temperature of $50-250^{\circ}C$ were examined, and showed a reversible response to $NO_2$ at various $NO_2$ concentrations. Finally, details of the growth mechanism and formation of Sn spheres and $SnO_2$ nanowire networks are also discussed.

• Journal of Industrial Convergence
• /
• v.21 no.9
• /
• pp.33-39
• /
• 2023

Nano-sized materials can be coated on various substrates, and since this material is transparent and conductive, it can be used as a transparent electrode for electronic devices or an electrode for power supply. In this study, CNT and Ag nanowires were repeatedly coated using the silk screen technique, and samples formed up to 5 times were fabricated, and their optical and electrical properties were measured and analyzed. It was confirmed that marks were formed on the surface of the silkscreen-coated sample according to the coating direction, and the trend of transmittance and surface resistance according to the number of times of coating was investigated. As the number of coatings increased, transmittance and surface resistance tended to decrease. In particular, in the case of transmittance, the range of change was large in the samples coated 2 and 5 times. These changes were confirmed by the Ag nanowire coating. In addition, starting from 700 nm, the previous wavelength region increased according to the wavelength, while the above showed a tendency to decrease. The surface resistance was lowered from 9Ω/cm² when coating once to 0.856Ω/cm² when coating five times. It was found that the resistance value was affected by Ag similarly to the permeability. In the future, it is necessary to realize a desired transparent electrode through Ag concentration and coating of Ag nanowires with other methods and fusion with highly transparent CNT to apply to electronic devices.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.14 no.2
• /
• pp.122-127
• /
• 2021

This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.

• Korean Chemical Engineering Research
• /
• v.52 no.3
• /
• pp.321-327
• /
• 2014

Polymer dispersed liquid crystal lenses of the cell gap of $11{\mu}m$ and $30{\mu}m$ were made from a uniformly dispersed mixture of 40 wt% NOA65 prepolymer - 60 wt% E7 liquid crystal with the variations of the additional photoinitiator. The photoinitiator, benzophenone of 5.0 wt% was originally in the commercial prepolymer NOA65. In this works, the influence of the benzophenone amount intentionally added in the commercial NOA65 on the electrical properties of polymer dispersed liquid crystal lens for smart electronic glasses. The additional quantities of the photoinitiator were 1, 2, 4, 8 and 16 wt% of the weight of NOA65 - E7 mixture. All the electro-optical properties of the sample with added benzophenone such as the driving voltage, the slope of the linear region, the response time and contrast ratio were more improved than that of commercial NOA65 only. These improvements were due to the increase of the average size of E7 liquid crystal droplets in the samples with the increase of the added benzophenon amount. The liquid crystal droplet size was increased from $5.3{\mu}m$ to $12.2{\mu}m$ when the photoinitiator was added from 0 wt% to 8 wt%. At the same concentration range of the photoinitiator, the driving voltage was ranged from 11.1 V to 17.3 V. The slopes of the linear region were in the range of 10.35~13.96 %T/V, which were more enhanced than that of NOA65 without the additional benzophenone. In particular, though the deteriorations by cell gap of $11{\mu}m$ were so effective to offset the influence of the added benzophenone for both rising and falling response time, it is confirmed that there were still somewhat improvement by the additional benzophenone. Response time and contrast ratios of all the samples with excess benzophenone were slightly enhanced.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.10 no.6
• /
• pp.487-495
• /
• 2017

The thermal characteristics of the electrodeless lamp are one of the main factors that determine the design and performance of the lamp. The coupler changes the impedance characteristic by heat and its use temperature is usually within about $150^{\circ}C$. In this study, we observed the phenomenon when the coupler was exposed at a temperature of $150^{\circ}C$ or higher, which has not been discussed so far. Two types of coupler A and coupler B with different spacing between the inner tube and the coupler were analyzed for electrical, thermal and optical properties and deterioration characteristics with different heat and heat shielding conditions. First, the impedance of the system is obtained and used as a criterion for analyzing the electrical characteristics through it. The diameters of the two types of couplers are 1 mm, and the experimental result shows that the coupler diameter is 1 mm, which can cancel out the loss of the magnetic field strength. Therefore, based on these results, when the coupler is exposed to high temperature of about $200^{\circ}C$, the efficient design method corresponding thereto is proposed.

• Journal of Broadcast Engineering
• /
• v.17 no.4
• /
• pp.625-633
• /
• 2012

Extended Depth of Focus (EDF) algorithms for extracting three-dimensional (3D) information from a set of optical image slices are studied by many researches recently. Due to the limited depth of focus of the microscope, only a small portion of the image slices are in focus. Most of the EDF algorithms try to find the in-focus area to generate a single focused image and a 3D depth image. Inherent to most image processing algorithms, the EDF algorithms need parameters to be properly initialized to perform successfully. In this paper, we select three popular transform-based EDF algorithms which are each based on pyramid, wavelet transform, and complex wavelet transform, and study the performance of the algorithms according to the initialization of its parameters. The parameters we considered consist of the number of levels used in the transform, the selection of the lowest level image, the window size used in high frequency filter, the noise reduction method, etc. Through extended simulation, we find a good relationship between the initialization of the parameters and the properties of both the texture and 3D ground truth images. Typically, we find that a proper initialization of the parameters improve the algorithm performance 3dB ~ 19dB over a default initialization in recovering the 3D information.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.72-72
• /
• 2011

Recently, Zinc oxide (ZnO) nano-structures have been received attractive attention because of their outstanding optical and electrical properties. It might be a promising material considered for applications to photonic and electronic devices such as ultraviolet light emitting diode, thin film transistor, and gas sensors. ZnO nano-structures can be typically synthesized by the VLS growth mode and self-assembly. In the VLS growth mode using various growth techniques, the noble metal catalysts such as Au and Sn were used. However, the growth of ZnO nano-structures on nano-crystalline Au seeds using radio frequency (RF) magnetron sputtering might be explained by the profile coating, i.e. the ZnO nano-structures were a morphological replica of Au seeds. Ga doped ZnO (ZnO:Ga) nano-structures using this concept were synthesized and characterized by XRD, AFM, SEM, and TEM. We found that surface morphology is drastically changed from initial islands to later sun-flower typed nano-structures. We will present the structural evolution of ZnO:Ga nano-structures with increasing the film thickness.