• 전자공학회논문지D
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• 제36D권3호
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• pp.85-91
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• 1999

재현성 있는 H:LiNbO\sub 3\ 광변조기의 제작을 위해 기존 광변조기에서 사용되는 Au/Cr/SiO\sub 2\ 전극구조 대신 상온에서 버퍼층 및 전극공정이 가능하고, 광대역 설계에도 유리하도록 새로운 Cu/parylene 전극구조를 사용한 광변조기의 설계 및 제작을 수행하였다. 이를 위해 유한요소법을 이용한 광변조기의 해석 및 설계, 소자제작을 위한 저손실 1550m H:LiNbO\sub 3\ 광도파로 공정, parylene 박막증착 및 CPW 전극형성 등의 단위 공정들을 확립하였다. 이러한 소자설계 기술 및 단위공정들의 결합을 통해 parylene 버퍼층구조 H:LiNbO\sub 3\ 광변조기 내부칩을 제작하였고, 저주파 구동특성 측정시스템을 통해 변조특성을 확인하였다. 특히 Cu/parylene 전극공정 전·후의 광도파로 특성이 일정하게 유지됨으로서 재현성 있는 소자제작이 가능함을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.276-276
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• 2008

Transparent and conducting indium tin oxide (ITO) and ITO/Nickel/ITO(INI) multilayered films were prepared on glass substrates by a magnetron sputtering without intentional substrate heating. The RF(13.56MHz) and DC power were applied to ITO and Nickel target, respectively. The thickness of ITO, Ni and ITO films were kept constantly at 50, 5 and 45 nm. In order to consider the effect of post deposition vacuum annealing in vacuum on the physical and optoeletrical properties of INI films, optical transmittance, electrical resistivity, crystallinity of the films were analyzed. From the observed result, it may conclude that the optoelectrical properties of the INI films were dependent on the post deposition annealing. For the INI films annealed at $300^{\circ}C$, the films have a polycrystalline structure with (110), (200), (210), (211) and (300). The resistivity of the films were $4.0\times10^{-4}{\Omega}cm$ at room temperature. As the annealing($300^{\circ}C$), resistivity decreased to $2.8\times10^{-4}{\Omega}cm$. And also the optical transmittance decreased from 79 to 70 % at 550nm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.40-43
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• 1995

In this paper, structual, optical and electrical properties of CdZnS thin films prepared by electron beam evaporation method were studied. The crysta1 structure of CdZnS films deposited was hexagonal type with preferential orientation of the (002) plane parallel to the substrate. The results of optical transmittance of the CdZnS film show that absorption edge is shifted to ZnS and optical bandgap was larger wish increasing ZnS content. The resistivity of the CdZnS film is decreasing with increasing ZnS content and mininum for 20 mole%.

• 조명전기설비학회논문지
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• 제28권10호
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• pp.49-55
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• 2014

This paper is basic study for development of an advanced photoelectric type smoke detector that has high reliability by reducing the occurrence of nuisance alarms. This paper was attempted to distinguish optical characteristics of the typical fire smoke particle and non-fire smoke particle. According to UL 268 standards, three types of test fires (the paper, the wood and the flammable liquid) were used in this paper for measurement of the fire smoke particles, and the water vapor and the cigarette smoke that were known as the main cause of the nuisance alarms were also used for the non-fire smoke particles. A smoke detection chamber was created, which was equipped with one light source and several light sensors for enabling simultaneous detection of light extinction and scattering, respectively. This paper analyzes the optical characteristics of each smoke particle using this chamber.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.60-60
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• 2010

1-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Bismuth oxide($Bi_2O_3$) is an important p-type semiconductor with main crystallographic polymorphs denoted by $\alpha-$, $\beta-$, $\gamma-$, and $\delta-Bi_2O_3$[1]. Due to its unique optical and electrical properties, $Bi_2O_3$ has been extensively investigated for various applications in gas sensors, photovoltaic cells, fuel cells, supercapacitors[2-4]. In this study, $Bi_2O_3$ NWs were grown by two step annealing process: in the first step, after annealing at $270^{\circ}C$ for 10h in a vaccum($3{\times}10^{-6}$ torr), we can obtain the bismuth nanowires. In the second step, after annealing at $300^{\circ}C$ for 2h in $O_2$ ambient, we successfully fabicated $Bi_2O_3$nanowires.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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• pp.94-95
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• 2007

We have observed electrical properties of ZnO thin films for the fabrication of transparent thin film transistor. ZnO thin films were deposited on $Al_2O_3$(0001) substrate at various temperatures by pulsed laser deposition(PLD). The third of harmonic(355nm) Nd:YAG laser was used for pulsed laser deposition. X-ray diffraction(XRD), field emission-scanning electron microscope(FE-SEM), and photoluminescence were used to characterize physical and optical properties of ZnO thin film.. The results indicated the ZnO film showed good optical properties as increasing temperatures, with low FWHM of exciton-related peak and XRD(0002) peak.

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국전기전자재료학회논문지
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• 제20권4호
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• pp.357-362
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• 2007

AZO(Aluminum-doped Zinc Oxide) films are attractive materials as transparent conductive electrode because they are inexpensive, nontoxic and abundant element compared with ITO(Indium Tin Oxide). AZO films have been deposited on glass (corning 1737) substrates by RF magnetron sputtering. The AZO film was post-annealed at $600^{\circ}C$ for 2 hr with $N_2$ atmosphere. The AZO films were used as an anode contact to fabricate OLEDs(Organic Light Emitting Diodes). OLEDs with $AZO/TPD/Alq_3/Al$ configuration were fabricated by thermal evaporation. We investigated that the electric, structural and optical properties of AZO thin films, which measured using the methods of XRD, SEM, Hall measurement and Spectrophotometer. The current density-voltage and luminescence-voltage properties of devices were studied and compared with ITO devices fabricated under the same conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1800-1802
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• 1999

Electroluminescence is occurred when phosphor is located in electric field. In this paper, we made powder electroluminescent device (PELD) with structured ITO film/phosphor/Insulator/silver paste. The transparent electrode was ITO film and green(2704-01) and orange(2702-02) and blue-green(2703-01) were used as phosphor. The insulator was $BaTiO_3$ and $Y_2O_3$, back electrode was silver paste. To investigate electrical and optical properties of PELDs, EL spectrum, Brightness, Transferred charge density using Sawyer-Towers circuit was measured.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.405-406
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• 2008

The amorphous indium zinc oxide (IZO) thin films were deposited on polyethersulfone (PES) and glass substrates by facing targets sputtering. IZO thin films deposited as functions of gas flow ratio on PES and glass substrates, respectively. The electrical, optical and structural properties of IZO thin films were evaluated by a Hall Effect Measurement, an X-Ray Diffractormeter, UV/VIS spectrometer in visible range and a scanning electron microscopy, respectively. As-deposited IZO thin films exhibited resistivity of $5.4\times10^{-4}$ and $4.5\times10^{-4}$ [$\Omega$-cm] on PES and glass substrates, respectively. The optical transmittance showed over 85% in the visible region on PES and glass substrates.