• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.27-29
• /
• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• 한국전기전자재료학회논문지
• /
• 제36권6호
• /
• pp.576-581
• /
• 2023

The Ga₂O₃ thin films were deposited using an RF sputtering system and the effect of crystallographic and optical properties under rapid thermal annealing conditions on Ga₂O₃ thin film was evaluated. A rapid thermal annealing method can fabricate a crystalline Ga₂O₃ thin film which is applied to various fields with a low cost and a high efficiency compared with the conventional post-annealing method. In this study, the Ga₂O₃ treated at 900℃ for 1 min showed the beta and gamma phases in XRD measurement. In optical properties, the crystalline Ga₂O₃ represented a high transmittance of more than 80% in the visible region and was calculated with a high optical bandgap energy of 4.58 eV. The beta and gamma phases Ga₂O₃ can be obtained by adjusting the rapid thermal annealing temperatures, and the various properties such as the optical bandgap energy can be controlled. Moreover, it is expected that crystalline Ga₂O₃ can be applied to various devices by controlling not only temperature but process time.

• Journal of the Optical Society of Korea
• /
• 제17권5호
• /
• pp.357-361
• /
• 2013

A regenerative Er-doped fiber amplifier system for a high-repetition-rate optical pulse train is investigated for the first time. A signal pulse train with a wavelength tuning range of 18 nm is produced by a passive mode-locked fiber laser based on a nonlinear polarization rotation technique. In order to realize the amplification, an optical delay-line is used to achieve time match between the pulses' interval and the period of pulse running through the regenerative amplifier. The 16 dB gain is obtained for an input pulse train with a launching power of -30.4 dBm, a center wavelength of 1563.4 nm and a repetition rate of 15.3 MHz. The output properties of signal pulses with different center wavelengths are also discussed. The pulse amplification is found to be different from the regenerative amplification system for CW signals.

• 한국전기전자재료학회논문지
• /
• 제31권5호
• /
• pp.320-323
• /
• 2018

SiGe thin films were deposited by remote plasma enhanced chemical vapor deposition (RPE-CVD) at $400^{\circ}C$ using $SiH_4$ or $SiCl_4$ and $GeCl_4$ as the source of Si and Ge, respectively. The growth rate and the degree of crystallinity of the fabricated films were characterized by scanning electron microscopy and Raman analysis, respectively. The optical and electrical properties of SiGe films fabricated using $SiCl_4$ and $SiH_4$ source were comparatively studied. SiGe films deposited using $SiCl_4$ source showed a lower growth rate and higher crystallinity than those deposited using $SiH_4$ source. Ultraviolet and visible spectroscopy measurement showed that the optical band gap of SiGe is in the range of 0.88~1.22 eV.

• 한국전기전자재료학회논문지
• /
• 제16권10호
• /
• pp.902-907
• /
• 2003

In this paper, the ITO thin film, which is considered as one of the most currently used material for the high performance transparent conducting films for the PDP cell, was made in a parallel-plate, capacitively coupled DC magnetron sputtering system. Some electrical and optical properties of ITO films were investigated and discussed on the basis of glow discharge characteristics. The optimized thin film fabricating conditions of Ar gas pressure and substrate temperature were derived from the Paschen curve and glow discharge characteristics. The maximum transmittance of 89.61 % in the visible region and optical band gap of 3.89 eV and resistivity of 1.67${\times}$10$\^$-3/ $\Omega$-cm were obtained under the conditions of 300 C of substrate temperature and 10∼15 mtorr of pressure, which corresponds nearly to that of Paschen minimum.

• 대한전자공학회논문지SD
• /
• 제43권7호
• /
• pp.1-6
• /
• 2006

본 연구에서는 광 논리 및 광 접속에 응용할 수 있는 GaAs/AlGaAs 구조의 완전 공핍 광 싸이리스터(depleted optical thyristor, DOT)에 VCSEL(vertical-cavity surface-emitting laser diode)을 응용하여, 활성층 위, 아래에 1/4 파장 거울층(quarter wavelength reflector stacks)을 제작함으로서 본 구조에서 최초의 레이징 특성을 구현하였고, 그 특성을 측정, 분석하였다. 스위칭 특성을 알아보기 위하여 순방향 전압에서는 비선형 s-자형의 전류-전압 특성을, 역방향 전압에서는 완전 공핍 전압을 모의실험으로 알아보았다. 모의실험을 바탕으로 설계, 제작한 VCL-DOT(Vertical Cavity Laser - Depleted Optical Thyristor)의 스위칭 전압과 전류는 5.24 V, $5{\mu}A$ 이고, 홀딩 전압과 전류는 각각 1.50 V, $100{\mu}A$가 나왔다. 측정된 레이징 문턱 전류는 0.65 mA 이고, 출력 파장은 854.5 nm의 레이징 특성을 확인하였다.

• 전자공학회논문지
• /
• 제49권11호
• /
• pp.74-85
• /
• 2012

본 논문에서는 이종 입체 카메라 시스템의 광학적 특성을 일치화하여 동일한 품질의 입체영상을 생성하는 기술을 제안한다. 이종 입체 카메라의 광학적 특성에는 크게 줌, 심도, 초점이 있으며 이들의 차이는 결과적으로 입체영상의 품질에 영향을 주어 사람의 시각 피로를 발생시키는 요인이 된다. 본 논문에서 제안하는 광학 특성 일치화 기술은 이종 카메라의 줌 영상을 일치한 후 동일 피사체에 대해 초점을 맞추고 심도를 일치화하는 과정으로 이루어진다. 이를 위하여 이종 입체 카메라의 줌 영상의 비교 알고리즘을 통하여 줌 렌즈에 대한 룩업테이블(LUT)을 작성하였다. 그리고 입체 영상의 에지(edge)에서 초점 정보를 추출하여 심도를 일치화하였다. 광학적 특성 일치화 실험을 위하여 직교방식의 리그를 제작하고 서로 다른 사양의 HD급 카메라를 이용하여 입체 카메라 장치를 구성하였다. 줌 일치화 및 심도 일치화에 대한 실험 결과로 시각 피로를 줄일 수 있는 입체 영상 생성이 가능함을 보였다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1990년도 하계학술대회 논문집
• /
• pp.187-190
• /
• 1990

A new technique is described for developing low-cost $SnO_2$ : F thin films as TCO (Transparent Conducting Oxide) substrate of a-Si solar cells. A novel Pyrosol equipment has been developed, and $SnO_2$ : F thin films have been deposited under the condition of varing dopant concentration, temperature and composition rate of solution. Futhermore, electrical and optical properties of thin films have been measured, and exhibit resistivity of $4.3{\times}10^{-4}{\Omega}$ cm and transmittance of 80% which is almost at the same level as those of $SnO_2$ : F thin films by CVD.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집
• /
• pp.525-528
• /
• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.367-367
• /
• 2007

Polymer/nanoparticle hybrids have been increasingly studied because of their enhanced properties for organic light emitting devices (OLEDs). In this study, we made poly(p-phenylene vinylene) (PPV) nanohybrid films by incorporation of Ag and $SiO_2$ nanoparticles into the PPV. A possible interaction between nanoparticles was investigated and especially we focused whether there is a change in the interaction between $SiO_2$ or Ag nanoparticles and matrix or not. The current characteristics of PPV nanohybrid films were analyzed by I-V and EL measurements. The optical properties were also investigated by UV-Vis spectroscopy and photoluminescence measurements.