• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.247-250
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• 2001

We studied optical properties of SiON thin-film in the applications of optical waveguide. SiON thin-film was grown in $300^{\circ}C$ by PECVD(plasma enhanced chemical vapor deposition) system. The change of SiON thin-film composition and refractive Index was studied as a function of varying $NH_3$ gas flow rate. As $NH_3$ gas flow rate was increased, Quantity of N and refractive index were increased at the same time. By the results, we could form the SiON thin-film to use of a waveguide with refractive index of 1.6. We analyzed the conditions of the thin-film with FTIR(fourier transform infrared) and OES (optical emission spectroscopy). N-H bonding($3390cm^{-1}$ ) can be removed by thermal annealing. And we could observe the SiH bonding state and quantity by OES analysis in $SiH_4$

• Korean Chemical Engineering Research
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• 제49권3호
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• pp.357-360
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• 2011

플라즈마 원자층증착 방법을 이용하여 질소를 도핑한 산화아연 나노박막을 Si(111) 기판에 제조하였다. $Zn(C_{2}H_{5})_{2}$, $O_{2}$ 및 $N_{2}$을 사용하여 rf 파워 세기를 50-300 W로 변화시키면서 N-doped ZnO 박막을 제조하였다. 박막의 구조적 광학적 전기적 특성을 각각 XRD, PL, Hall 효과를 측정하여 분석하였다. 플라즈마 rf 파워가 증가함에 따라 ZnO 나노 박막 내의 질소(N) 함유 농도가 높아지고, p형 ZnO의 특성을 보였다.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.229-229
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• 2006

Recently there has been significant interest in utilizing functional semiconductor polymers for electronic and opto-electronic devices such as Light-emitting diodes, thin film field effect transistors, solar cells, displays, and chemical and biosensors. However, better materials and further understanding of their electronic properties are critical for devices based on these materials. In this work, we use various scanning probe techniques, spectroscopy, and device fabrication to study the molecular interactions, optical and charge transport properties in conjugated polyelectrolytes. Using chemical synthesis approach, we are able to tune the molecular packing and interactions in these materials, which in turn, influence their electronic properties and device performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.140-140
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• 1999

Ti/Ni multilayered films (MLF) are ideal for neutron optics particularly in neutron guides and focusing devices. This system also possesses the tendency of amorphization through a solid-state reaction (SSR). This behaviors are closely related to the electronic structures and both magneto-optical (MO) and optical properties of metals depend strongly on their electron energy structures. Mutual inter-diffusion of the Tin and Ni atoms in the MLF caused by a low temperature annealing should decrease the thickness of pure Ni, as well as change the chemical and atomic order in the reactive zone. The application of the MO spectroscopy to the study of SSR in the MLF allows us to obtain an additional information on the changes in the atomic and chemical orders in the interface region. The optical one has no restriction on the magnetic state of the constituent sublayers. Therefore, the changes in magnetic, MO and optical properties of the Ti/Ni MLF due to SSR can be expected. To the best of our knowledge, the MO and optical spectroscopies were not used for this purpose. SSR has been studied in the series of the Ti/Ni MLFs with bilayer periods of 0.65-22.2nm and constant ratio of the Ti to Ni sublayers thickness by using MO and optical spectroscopies as well as an x-ray diffraction. The experimental MO and optical spectra are compared with the computer-simulated spectra, assuming various interface models. The relative changes in the x-ray diffraction spectra and MO properties of the Ti/Ni MLF caused by annealing are bigger for the multilayers with "thick" sublayers, or the SSR with the formation of amorphous alloy takes place mainly in the Ti/Ni multilayers with "thick" sublayers, while in the nominal threshold thickness of the Ni-sublayer for the observation of the equatorial Kerr effect in the as-deposited and annealed Ti/Ni MLFs of about 3.0 and 4.5nm thick is explained by the formation of amorphous alloy during the deposition or the formation of the nonmagnetic alloyed regions between pure components as a result of the SSR. For the case of Ti/Ni MLF the MO approach is more sensitive for the determination of the thickness of the reacted zone, while x-ray diffraction is more useful for structural analyses.structural analyses.

• Elastomers and Composites
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• 제50권1호
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• pp.49-54
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• 2015

Dynamically vulcanized PMMA/ACM (80 wt%/20 wt%) blend using DCP as a curing agent was prepared using internal mixer. The morphology, mechanical properties, optical properties, melt viscosity and die swell were characterized by using FE-SEM, tensile test, Izod impact test, dynamic mechanical analysis, ARES and capillary rheometer, respectively. The blends show a phase-separated morphology in which ACM are dispersed in PMMA matrix. Dynamically vulcanized blend exhibits higher mechanical properties, higher melt viscosity, and die swell as compared to simple blend. And, the dynamically vulcanized blend showed total transmittance of more than 75% and haze of higher than 90%, which enable it to find potential applications to fabricate an optical diffuser by extrusion process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.158-158
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• 2011

$Cu(In_xGa_{1-x})Se_2$ (CIGS) thin film solar cell is one of the most promising solar cells in photovoltaic devices. CIGS has a direct band gap which varied from 1.0 to 1.26 eV, depending on the Ga to In ratio. Also, CIGS has been studying for an absorber in thin film solar cells due to their highest absorption coefficient which is $1{\times}10^5cm^{-1}$ and good stability for deposition process at high temperature of $450{\sim}590^{\circ}C$. Currently, the highest efficiency of CIGS thin film solar cell is approximately 20.3%, which is closely approaching to the efficiency of poly-silicon solar cell. The deposition technique is one of the most important points in preparing CIGS thin film solar cells. Among the various deposition techniques, the sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have been prepared by rf magnetron sputtering method using a single target. The optical and structural properties of CIGS films are generally dependent on deposition parameters. Therefore, we will explore the influence of deposition power on the properties of CIGS films and the films will be deposited by rf magnetron sputtering using CIGS single target on Mo coated soda lime glass at $500^{\circ}C$. The thickness of CIGS films will be measured by Tencor-P1 profiler. The optical properties will be measured by UV-visible spectroscopy. The crystal structure will be analyzed using X-ray diffraction (XRD). Finally the optimal deposition conditions for CIGS thin films will be developed.

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.857-862
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• 2009

We model lattice-mismatched group III-V semiconductor $In_{x}Ga_{1-x}$ alloys with the three-parameter anharmonic Kirkwood-Keating potential, which includes realistic distortion effect by introducing anharmonicity. Although the potential parameters were determined based on optical properties of the binary parent alloys InAs and GaAs, simulated dielectric functions, reflectance, and Raman spectra of alloys agree excellently with experimental data for any arbitrary atomic composition. For a wide range of atomic composition, InAs- and GaAs-bond retain their respective properties of binary parent crystals despite lattice and charge mismatch. It implies that use of the anharmonic Kirkwood-Keating potential may provide an optimal model system to investigate diverse and unique optical properties of quantum dot heterostructures by circumventing potential parameter searches for particular local structures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.290.1-290.1
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• 2016

Grapehen, a single atomic layer of graphite, has been in the spotlight and researched in vaious fields, because its fine mechanical, electrical properties, flexibility and transparence. Synthesis methods for large-area graphene such as chemical vaper deposition (CVD) and mechanical, chemical exfoliation have been reported. In particular, chemical exfoliation method receive attention due to low cost process. Chemical exfoliation method require reduction of graphene oxide in the process of exfoliation such as chemical reduction by strong reductant, thermal reduction on high temperature, and optical reduction via ultraviolet light exposure. Among these reduction methods, optical reduction is free from damage by strong reductant and high temperature. However, optical reduction is economically infeasible because the high cost of short-wavelength ultraviolet light sorce. In this paper, we make graphene-oxide and lanthanoid ion mixture aqueous solution which has highly optical absorbency in selective wevelength region. Sequentially, we synthesize reduced graphene oxide (RGO) using the solution and visible laser beam. Concretely, graphene oxide is made by modified hummer's method and mix with 1 ml each ultraviolet ray absorbent Gd3+ ion, Green laser absorbent Tb3+ ion, Red laser absorbent Eu3+ ion. After that, we revivify graphene oxide by laser exposure of 300 ~ 800 nm layser 1mW/cm2 +. We demonstrate reproducibility and repeatability of RGO through FT-IR, UV-VIS, Low temperature PL, SEM, XPS and electrical measurement.

• 한국분말재료학회지
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• 제27권2호
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• pp.154-163
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• 2020

Fluorescent nanoparticles are characterized by their unique properties such as luminescence, optical transparency, and sensitivity to various chemical environments. For example, semiconductor nanocrystals (quantum dots), which are nanophosphors doped with transition metal or rare earth ions, can be classified as fluorescent nanoparticles. Tuning their optical and physico-chemical properties can be carried out by considering and taking advantage of nanoscale effects. For instance, quantum confinement causes a much higher fluorescence with nanoparticles than with their bulk counterparts. Recently, various types of fluorescent nanoparticles have been synthesized to extend their applications to other fields. In this study, State-of-the-art fluorescent nanoparticles are reviewed with emphasis on their analytical and anti-counterfeiting applications and synthesis processes. Moreover, the fundamental principles behind the exceptional properties of fluorescent nanoparticles are discussed.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.582-586
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also investigate the effect of the SiN mask on its optical property. By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21\times10^9\;cm^{-2}\;to\;9.7\times10^8\;cm^{-2}$. The PL intensity of GaN with SiN mask improved 2 times to that without SiN mask. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.