• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.359-364
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• 2016

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.12
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• pp.691-697
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• 2000

A fiberoptic sensor using a low-coherence SLD as a light source has been studied. The sensor system employing an intrinsic fiber Fabry-Peort interferometer as a sensing tip and a fiber Mach-Zehnder interferometer as a processing one, overcomes the ambiguous reading caused by the highly periodic natrue of conventional high-precision interferometric sensors and provides unambiguous identification of the desired phase among several candidates on the transfer function of an interferometric signal. A tentative application to the temperature sensor shows the potential that the fiberoptic sensor has a side-dynamic range of $0-900^{\circ}C$ as well as reasonable resolution higher than $0.1^{\circ}C$ without ambiguity. Due to the inherent property of the optical fiber itself and the intrinsic fiber Fabry-Perot interferometer, the proposed fiberoptic sensor will give obvious benefits when it is applied to harsh environments to monitor some physical parameters such as temperature, strain, pressure and vibration.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.11
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• pp.2412-2418
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• 2009

As an astonishing progress of FTTH infrastructure, the new technologies have been widely studied to use the tantalizing benefits of high bandwidth in fiber optic cable. In this paper, a new VONU is presented to perform all necessary optical functions. It can converts digital and analog CATV signals and satellite-based signal transmitted via one fiber optic cable to electrical signals (electric lights). However, most previous VONU systems have the problems such as interference between difference services, signal distortion, and noise increasing rate. These problems cause the quality deterioration in broadcasting. Therefore, we suggest the new VONU system to solve all problems listed above. In addition, we show that how our system performs well by measuring the real data with implemented system.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2186-2188
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• 2000

A fiberoptic sensor using an SLD as a light source has been studied. The sensor system employs an intrinsic fiber Fabry-Perot interferometer as a sensing tip and a fiber Mach-Zehnder interferometer as a processing one. A free loading test for temperature application shows that the fiberoptic sensor has a wide-dynamic range as well as high resolution. Due to the inherent property of the optical fiber itself and the intrinsic Fabry-Perot interferometer. the fiberoptic sensor gives obvious benefits when it is applied to harsh environments to monitor some physical parameters such as temperature, strain, pressure and vibration.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1694-1696
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• 2016

Present thin film solar cells with hydrogenated amorphous silicon oxide (a-SiO:H) as an absorber suffer from low fill factor(FF) of 61~64 [%] in spite of its benefits related to high open circuit voltage ($V_{oc}$). Since degraded quality of a-SiO:H absorber by alloying with oxygen can affect the FF, we aimed to achieve high photosensitivity by minimizing $CO_2$ gas addition. Improving optical gap($E_{opt}$) has been attained by strong hydrogen dilution combined with lowering substrate temperature down to 100 [$^{\circ}C$]. Small amount of the $CO_2$ was added in order to disturb microcrystalline formation by high hydrogen dilution. The developed a-SiO:H has high photosensitivity (${\sim}2{\times}10^5$) and high $E_{opt}$ of 1.85 [eV], which contributed to attain remarkable FF of 74 [%] and high $V_{oc}$ (>1 [V]). As a result, high power conversion efficiency of 7.18 [%] was demonstrated by using very thin absorber layer of only 100 [nm], even though we processed all experiment at extremely low temperature of 100 [$^{\circ}C$].

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2002.05a
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• pp.46-46
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• 2002

It is well known that thin film growth and surface morphology can be substantially modified by ion-bombardment during the deposition. This is particularly important in case of thin-film deposition at low temperatures where the film growth occurs under highly nonequilibrium conditions. An attractive way to promote crystalline growth and surface morphology is deposition of additional energy in to the surface of the growing film by bombardment with hyperthermal particles. We were deposited crystalline Ti and TiN thin films on Si substrate by magnetron sputtering method with grid. Its thin films were highly smoothed and dense as increasing grid bias. In order explore the benefits of a bombardment of the growing film with high energetic particles. Ti and TiN films were deposited on Si substrates by an unbalanced magnetron sputter source with attached grid assembly for energetic ion extraction. Also, we have studied the variation of the plasma states by Langmuir probe and Optical Emission Spectroscopy (OES). The epitaxial orientation. microstructual characteristics. electrical and surface properties of the films were analyzed by XRD. SEM. Four point probe and AFM.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.268-268
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• 2016

Chemical sensors have attracted much attention due to their various applications such as agriculture product, cosmetic and pharmaceutical components and clinical control. A conventional chemical and biological sensor is consists of fluorescent dye, optical light sources, and photodetector to quantify the extent of concentration. Such complicated system leads to rising cost and slow response time. Until now, the most contemporary thin film transistors (TFTs) are used in the field of flat panel display technology for switching device. Some papers have reported that an interesting alternative to flat panel display technology is chemical sensor technology. Recent advances in chemical detection study for using TFTs, benefits from overwhelming progress made in organic thin film transistors (OTFTs) electronic, have been studied alternative to current optical detection system. However numerous problems still remain especially the long-term stability and lack of reliability. On the other hand, the utilization of metal oxide transistor technology in chemical sensors is substantially promising owing to many advantages such as outstanding electrical performance, flexible device, and transparency. The top-gate structure transistor indicated long-term atmosphere stability and reliability because insulator layer is deposited on the top of semiconductor layer, as an effective mechanical and chemical protection. We report on the fabrication of InGaZnO TFTs with silver nanowire as the top gate electrode for the aim of chemical materials detection by monitoring change of electrical properties. We demonstrated that the improved sensitivity characteristics are related to the employment of a unique combination of nano materials. The silver nanowire top-gate InGaZnO TFTs used in this study features the following advantages: i) high sensitivity, ii) long-term stability in atmosphere and buffer solution iii) no necessary additional electrode and iv) simple fabrication process by spray.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.3
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• pp.146-152
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• 2013

In this paper, we have proposed and experimentally demonstrated an intensity-based self-referencing fiber optic sensor. The proposed fiber optic sensor consists of a broadband light source (BLS), fiber Bragg grating (FBG), tunable Fabry-Perot (F-P) filter, and LabVIEW program. We define the measurement parameter (X) and the calibration parameter (${\beta}$) to determine the transfer function(H) of the self-referencing fiber optic sensor, and the validity of the theoretical analysis is confirmed by experiments. The self-referencing characteristic for the proposed system has been validated by showing that the measurement parameter (X) is invariant for BLS optical power attenuations of 0 dB, 3 dB, and 6 dB. Also, the measured result is irrelevant to the FBGs with different characteristics. This means that the proposed fiber optic sensor offers the flexibility for determining the FBGs needed for implementation. Experimental results for the proposed fiber optic sensor are in good agreement with a theoretical analysis for BLS optical power attenuations and for three FBG pairs with different characteristics. So, the proposed fiber optic sensor has several benefits, including the self-referencing characteristic and the flexibility to determine the FBGs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.

• Journal of Korea Trade
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• v.25 no.2
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• pp.75-94
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• 2021

Purpose - This article will take the Korean manufacturing industry as an example to estimate Korea's global value chain status from the perspective of overall and sub-industry, hoping to provide a theoretical reference for Korean manufacturing to climb the global value chain. Design/methodology - Based on the WIOD data. The data is calculated by using MATLAB (2014a) coding. The data for 6 sectors are classified according to the International Standard Industrial Classification revision 3 (ISIC Rev. 3), the WIOD data are used to calculate and compare the position, participation and dynamics of the Korea, China and USA' manufacturing industry in the 1995-2016. Findings - The empirical results supported conclusions of the theoretical model. In the Korean GVC of electrical and optical sector, while stronger forward linkages than backward linkages to GVC are advantageous for an average advanced country, the benefits of downstream tasks are pronounced for non-advanced countries. And proved the correlation for an index to capture a country's upstream position or downstream position, it makes sense to compare that Korea's exports of intermediates in the same sector that are used by China and USA. Originality/value - The first is to re-examine the characteristics of South Korea's participation in global value chains under a more systematic and accurate theoretical framework, which provides a new empirical reference for related research; the second is to content covers of the manufacturing 6 sectors, so as to more completely describe the characteristics of Korean manufacturing's participation in global value chains; The value of this paper is providing empirical evidence of the effect of Korea's the GVC of manufacturing sectors. In the GVC of 6 sectors, first three have a higher position in the value chain and are in the upper middle and upper reaches of the GVC. The latter two have a low GVC position index, which has become the main sector that pulls down the overall position of Korea's manufacturing industry.