The Journal of Korea Institute of Information, Electronics, and Communication Technology
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v.14
no.2
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pp.122-127
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2021
This paper produces CdS thin film using ITO glass as substrates. The MDS (Multiplex Deposition Sputter System) was used to produce devices by changing RF power and deposition time. The manufactured specimen was analyzed for its optical properties. The purpose of this paper is to find the fabrication conditions that can be applied to the photo-absorbing layer of solar cells. When RF power was 50W and deposition time was 10 minutes, the thickness was measured at 64Å. At 100W, the thickness was measured at 406Å and at 150 W, the thickness was measured at 889Å. Thin films were found to increase in thickness as RF power increased. As a result of the light transmittance measurement, 550-850nm was observed to have a transmittance of approximately 70% or more when the RF power was 50W, 100W, and 150W. Increasing RF power increased thickness and increased particle size, resulting in increased thin film density, resulting in reduced light transmittance. When RF power was 100W and deposition time was 15 minutes, the band gap was calculated at 3.998eV. When deposition time is 20 minutes, it is 3.987eV, 150W is 3.965eV at 15 minutes, and 3.831eV at 20 minutes. It was measured that the band gap decreased as the RF power increased. At XRD analysis, diffraction peaks at 2Θ=26.44 could be observed regardless of changes in RF power and deposition time. The FWHM was shown to decrease with increasing deposition time. And it was measured that the particle size increased as RF power was constant and deposition time was increased.
In this study, glass fibers are fabricated via a continuous spinning process using manganese slag, steel slag, and silica stone. To fabricate the glass fibers, raw materials are put into an alumina crucible, melted at $1550^{\circ}C$ for 2 hrs, and then annealed at $600^{\circ}C$ for 2 hrs. We obtain a black colored glass. We identify the non-crystalline nature of the glass using an XRD(x-ray diffractometer) graph. An adaptable temperature for spinning of the bulk marble glass is characterized using a high temperature viscometer. Spinning is carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of $1109^{\circ}C$ to $1166^{\circ}C$, while the winder speed is in the range of 100rpm to 250rpm. We investigate the various properties of glass fibers. The average diameters of the glass fibers are measured by optical microscope and FE-SEM. The average diameter of the glass fibers is $73{\mu}m$ at 100rpm, $65{\mu}m$ at 150rpm, $55{\mu}m$ at 200rpm, and $45{\mu}m$ at 250rpm. The mechanical properties of the fibers are confirmed using a UTM(Universal materials testing machine). The average tensile strength of the glass fibers is 21MPa at 100rpm, 31MPa at 150rpm, 34MPa at 200rpm, and 45MPa at 250rpm.
Kim, Ik gyu;Kim, Kwangbae;Kim, Eun-Seok;Song, Ohsung
Journal of the Korea Academia-Industrial cooperation Society
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v.20
no.9
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pp.382-389
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2019
A novel folding process is proposed using a repeated cold-die forging and annealing to form a sterling silver ring. Sterling silver plate was cut into a doughnut shape, and lattices with 0.43-mm line-width were imprinted on it. The sample was folded by forging using dies with slopes of $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$ and annealing. For comparison, samples were also fabricated without annealing. Strain was identified by measuring the length of lattices. Vernier calipers, a Vickers hardness tester, an optical microscope, and a UV-VIS colorimeter were used to determine the size, hardness, microstructure, and body color. Without annealing, cracks occurred. However, successful deformation was possible when annealing was used. The results of macro strain measurements show that the outer diameter and width decreased, while the inner diameter and thickness increased after the final process. The maximum strain was increased 0.128 toward the parallel direction. The Vickers hardness decreased after annealing and increased after the folding process. The microstructure results showed that the grain size increased after annealing but decreased after folding. The color difference based on the Lab index was under 10 for all processes. Eventually, a doughnut-shaped silver plate was successfully deformed into a ring shape by the folding process.
Kim, Ung-Gyu;Han, Jung-Suk;Yoon, Hyung-In;Yeo, In-Sung Luke
The Journal of Korean Academy of Prosthodontics
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v.59
no.1
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pp.116-125
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2021
A three-dimensional (3D) intraoral scanner, which is one of the major developments in digital dentistry, is widely used in fixed prosthodontics. The application of intraoral scanner is now increasing in removable prosthodontics. Sclerotic change induced by scleroderma causes the limitation of mouth opening and multiple loss of the teeth. Conventional prosthodontic procedures are challenging for patients with this disease. This study showed a case of digital approach to the removable prosthodontic treatment of a patient who had the scleroderma and the consequent microstomia. At the provisional stage, the optical impression of patient's oral structures was digitally obtained. Using a 3D printer, the provisional dentures were fabricated. After extraction of hopeless tooth, the definitive digital impression was taken and the metal frameworks were fabricated, based on the data acquired from the impression. The definitive removable partial dentures were completed and delivered to the patient, who was satisfied with the prostheses.
Jeon, Sangheon;Park, Rowoon;Jeong, Jeonghwa;Hong, Suck Won
Journal of the Microelectronics and Packaging Society
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v.28
no.1
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pp.1-12
/
2021
Here, we introduce a laser-induced graphene synthesis technology and its applications for the electric/electronic device manufacturing process. Recently, the micro/nanopatterning technique of graphene has received great attention for the utilization of these new graphene structures, which shows progress developments at present with a variety of uses in electronic devices. Some examples of practical applications suggested a great potential for the tunable graphene synthetic manners through the control of the laser set-up, such as a selection of the wavelength, power adjustment, and optical techniques. This emerging technology has expandability to electric/electronic devices combined together with existed micro-packaging technology and can be integrated with the new processing steps to be applied for the operation in the fields of biosensors, supercapacitors, electrochemical sensors, etc. We believe that the laser-induced graphene technology introduced in this paper can be easily applied to portable small electronic devices and wearable electronics in the near future.
New yellow quinoline-dione dye derivatives were designed and synthesized for use in image sensor color filters. The synthesized compounds have a basic chemical structure composed of quinoline and dione groups. New materials were evaluated on the basis of their optical and thermal properties under conditions mimicking those of a commercial device fabrication process. A comparison of their related performances revealed that, between the two prepared compounds, 2-(3-hydroxyquinolin-2(1H)-ylidene)-1H-indene-1,3(2H)-dione (HQIDO) exhibited the superior performance as an image sensor color filter material, including a solubility greater than 0.5 wt% in propylene glycol monomethyl ether acetate solvent and a high decomposition temperature of 298 ℃, respectively. The results suggest that HQIDO can be used as a yellow dye additive in an image sensor colorant.
A magnetic quadrupole doublet was fabricated for use at the pre-target position of SNU 1.5MV Van de Graaff accelerator and then its optical characteristics were measured and analysed. The physical dimensions are: pole length 180mm, aperture radius 25mm, pole tip radius 28.75mm. Material for poles and return yokes is carbon steel KS-SM40C. Coils have 480 turns per one pole and air-cooling is adopted. Applying the d.c. current 2.99$\pm$0.03A to the lens, and using the Hall probe, magnetic field elements $B_{\theta}$ , $B_{\gamma}$, were measured at the selected Points along each coordinate direction r,$\theta$, z. From the area integration and orthogonal polynomial fitting for the measured data, the magnetic Field gradient G=566.3$\pm$2.1 gauss/cm at lens center, the effective length L=208.3$\pm$1.44mm along the lens axis have been obtained. The harmonic contents were determined up to 20-pole from the generalized least squares fitting. The results indicate that sextupole/quadrupole is below 1.4$\pm$0.9% and all the other multipoles are below 0.5% in the region within 18mm radius at the center of lens.
Jeeho Park;Young-Seok Song;Sukang Bae;Tae-Wook Kim
Journal of the Microelectronics and Packaging Society
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v.30
no.3
/
pp.56-63
/
2023
In this paper, we studied the effect of electron beam irradiation on sol-gel indium-gallium-zinc oxide (IGZO) thin films under air and nitrogen atmosphere and carried out the electrical characterization of the s ol-gel IGZO thin film transistors (TFTs). To investigate the optical properties, crystalline structure and chemical state of the sol-gel IGZO thin films after electron beam irradiation, UV-Visible spectroscopy, X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) were carried out. The sol-gel IGZO thin films exhibited over 80% transmittance in the visible range. The XRD analysis confirmed the amorphous nature of the sol-gel IGZO films regardless of electron beam irradiation. When electron beam irradiation was conducted in a nitrogen (N2) atmosphere, we observed an increased proportion of peaks related to M-O bonding contributed to the improved quality of the thin films. Sol-gel IGZO TFTs subjected to electron beam exposure in a nitrogen atmosphere exhibited enhanced electrical characteristics in terms of on/off ratio and electron mobility. In addition, the electrical parameters of the transistor (on/off ratio, threshold voltage, electron mobility, subthreshold swing) remained relatively stable over time, indicating that the electron beam exposure process in a nitrogen atmosphere could enhance the reliability of IGZO-based thin-film transistors in the fabrication of sol-gel processed TFTs.
Ga Young Shin;Hyo-Lyn Kim;So-Yoon Park;Mi So Park;Chanhyeong Kim;Jae-Young Her
Food Science and Preservation
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v.31
no.1
/
pp.126-137
/
2024
In this study, zinc oxide nanoparticles (ZnONPs) were synthesized using three distinct zinc salts: zinc acetate, zinc chloride, and zinc nitrate. These ZnONPs were subsequently utilized in the fabrication of carrageenan-ZnONPs (Car-ZnONPs) composite films. The study assessed influence of the various ZnONPs on the morphological, water vapor barrier, color, optical, and antimicrobial properties of the Car-ZnONPs composite films. The surface morphology and UV-blocking attributes of the composite films were affected by the type of ZnONPs used, but their surface color, transparency, and chemical structure remained unaltered. The composite film's thickness and elongation at break (EB) significantly increased, while the tensile strength significantly decreased. In contrast, film's elastic modulus (EM) and water vapor permeability coefficient (WVP) showed no significant difference. All the composite films with added ZnONPs demonstrated potent antibacterial activity against Escherichia coli O157:H7 and Listeria monocytogenes . Among the carrageenan-based composite films, Car-ZnONPsZC showed the highest antibacterial and UV-blocking properties, and its elongation at break was significantly higher than that of the pure carrageenan films. This suggests that ZnONPs composite films have the potential to be used as an active packaging film, preserve the safety of the packaged food and extend shelf life.
Proceedings of the Korean Vacuum Society Conference
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2012.02a
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pp.100-101
/
2012
The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.
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