• 폴리머
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• 제29권4호
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• pp.418-421
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• 2005

본 연구에서는 나노/마이크로 소자 및 MEMS 제작에 활용가능하고 또한 수십 마이크로미터 크기의 3차원 곡면을 가진 형상을 제작하기 유리한 이광자 광중합을 이용한 다중조사 복셀 매트릭스 스캐닝법(multi-exposure voxel matrix scanning method)에 의한 나노 복화공정을 개발하였다. 이 공정을 통하여는 높이에 따라 14가지의 색을 가진 등고선으로 표현된 3차원 자유곡면 형상을 적층방식이 아닌 단일 층으로 3차원으로 제작할 수 있다. 여기서 수광각도가 1.25인 집광렌즈를 사용하여 레이저의 조사시간에 따라 1.2 um에서 6.4 um까지 변하는 복셀의 높이 차이를 이용하여 3차원 곡면 제작이 가능하다. 본 연구의 유용성을 검토하기 위하여 몇 가지 3차원 곡면형상을 초미세 입체 패터닝 공정에서 사용하는 일반적인 적층방식을 사용하지 않고 단층으로 제작하여 시간을 단축하였다.

• Design & Manufacturing
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• 제2권1호
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• pp.33-38
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• 2008

As consumer in optics, electronics, aerospace and electronics industry grow, the demand for ultra precision aspherical surface lens increases higher. Precision turning with single-diamond tools has a long history of development for fabrication of optical quality surfaces since the advent of aerostatic rotary spindles and precise linear motion guide ways. To enhance the precision and productivity of ultra precision aspherical surface micro lens, the following specification of ultra precision grinding system is required: the highest rotational speed of the grinder is 100,000rpm and its turning accuracy is $0.1{\mu}m$, positioning accuracy is $0.1{\mu}m$. The development process of the grinding system for the ultra precision aspherical surface micro lens for optoelectronics industry is introduced. In the work reported in this paper, an intelligent grinding system for ultra precision aspherical surface machining was designed by considering the factors affecting the surface roughness and profiles accuracy. An aerostatic form was adopted to build the spindle of the workpiece and the spindle of grinder and ultra precision LM guide way was adopted in this system. And this paper deals with mirror grinding of an aspheric surface micro lens by resin bonded diamond wheel and spherical lens of BK7. It results was that a form accuracy of $0.6{\mu}m$ P-V and a surface roughness of $0.006{\mu}m$ Rmax.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.619-619
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• 2009

Recently, silica nanostructures are widely used in various applicationary areas such as chemical sensors, biosensors, nano-fillers, markers, catalysts, and as a substrate for quantum dots etc, because of their excellent physical, chemical and optical properties. Additionally, these days, semiconductor silica and silicon with high purity is a key challenge because of their metallurgical grade silicon (MG-Si) exhibit purity of about 99% produced by an arc discharge method with high cast. Tremendous efforts are being paid towards this direction to reduce the cast of high purity silicon for generation of photovoltaic power as a solar cell. In this direction, which contains a small amount of impurities, which can be further purified by acid leaching process. In this regard, initially the low cast rice-husk was cultivated from local rice field and washed well with high purity distilled water and were treated with acid leaching process (1:10 HCl and $H_2O$) to remove the atmospheric dirt and impurity. The acid treated rice-husk was again washed with distilled water and dried in an oven at $60^{\circ}C$. The dried rice-husk was further annealed at different temperatures (620 and $900^{\circ}C$) for the formation of silica nanospheres. The confirmation of silica was observed by the X-ray diffraction pattern and X-ray photoelectron spectroscopy. The morphology of obtained nanostructures were analyzed via Field-emission scanning electron microscope(FE-SEM) and Transmission electron microscopy(TEM) and it reveals that the size of each nanosphares is about 50-60nm. Using the Inductively coupled plasma mass spectrometry(ICP-MS), Silica was analyzed for the amount of impurities.

• 한국레이저가공학회지
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• 제14권2호
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• pp.17-23
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• 2011

Active thin films are ubiquitous in the manufacture of all forms of flat panel display (FPD). One of the most widely employed thin films is indium tin oxide (ITO) and metal films used electrically conductive materials in display industries. ITO is widely used for fabrication of LCD, OLED device, and many kinds of optical applications because of transparency in visible range and its high conductivity and metal films are also widely employed as electrodes in various electric and display industries. It is important that removing specific area of layer, such as ITO or metal film on substrate, to fabricate and repair electrode in display industries. In this work, we demonstrate efficient selective ablation process to ITO and aluminum film on glass using a femtosecond laser (${\lambda}p=1025nm$) respectively. The femtosecond laser with wavelength of 1025nm, pulse duration of 400fs, and the repetition rate of 100kHz was used for selectively removing ITO and Al on glass in the air. We can successfully remove the ITO and Al films with various pulse energies using a femtosecond laser.

• 한국광학회지
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• 제4권3호
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• pp.266-275
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• 1993

Si 기판 위에 low pressure chemical vapor deposition 방법에 의해 TEOS (tetraethylorthosilicate)와 TMPite (trimethylphosphite)를 재료로하여 집적광학용 $P_2O_5-SiO_2$ 박막을 만들고 그 특성을 조사하였다. TEOS의 반응에 TMPite가 참여함으로서 반응활성화에너지는 54.6 kcal/mole에서 39.2 kcal/mole로 크게 낮아졌으며 박막의 증착속도와 P 농도는 TMPite의 유량에 비례하여 증가하였다. 또한 증착온도가 높을스록 박막의 증착속도는 증가하나 P 농도는 감소하였다. 제작된 박막의 굴절률은 P 농도 1wt% 당 0.0019로 P 농도에 비례하여 증가하였다. 측정된 박막 불균일도는 두께 ${\pm}$7% 및 P 농도 ${\pm}$0.5wt% 정도로서 이러한 불균일성은 주로 TMPite의 불균일한 수송에 기인함을 보였다. 또한 P 농도가 10wt% 이상인 박막을 대기중에 장시간 노출하면 표면에 인산이 석출됨을 확인하였다.

• 한국정밀공학회지
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• 제18권5호
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• pp.171-176
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• 2001

Plasma Display Panel(PDP) is a type of flat panel display utilizing the light emission produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalks from adjacent sub-pixels. Mold for forming barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing process such as screen printing, sand-blasting and photosensitive glass methods. Mold for PDP barrier ribs have stripes of micro grooves transferring glass-material wall. In this paper, Stripes of grooves of which width 48${\mu}{\textrm}{m}$ and 270${\mu}{\textrm}{m}$, depth 124${\mu}{\textrm}{m}$, pitch 274${\mu}{\textrm}{m}$ was acquired by machining hard and brittle materials of WC, Silicon, Alumina with dicing saw blade. Maximum roughness of the bottom and sidewall of the grooves was respectively 120nm, 287nm in grooving WC. Maximum tilt angle caused by difference between upper-most width and lower-most width was 2$^{\circ}$. Maximum Radius of bottom curvatures was 7.75${\mu}{\textrm}{m}$. This results satisfies the specification for barrier ribs of 50 inch XGA PDP if the groove form of mold was fully transferred to the barrier ribs. Barrier ribs were formed with Silicone rubber mold, which is transferred from grooved hard materials. Silicone rubber mold has elasticity accommodating the waveness of lower glass plate of PDP.

• 센서학회지
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• 제9권1호
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• pp.15-21
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• 2000

단일모드 광섬유와 평면도파로 결합기의 열에 의하여 공진파장이 이동하는 현상을 이용한 광섬유형 온도센서를 구현하였다. 평면도파로는 열에 의한 굴절률 변화가 큰 열광학폴리머를 사용하였다. 광섬유 연마과정 등의 소자제작 공정을 소개하고, 편광에 무관하게 동작하는 광소자 구조를 실험으로 검증하였다. 제작된 소자의 편광에 따른 공진파장의 차이는 2nm 이하였다. 실온($24^{\circ}C$)에서 $90^{\circ}C$까지의 온도변화에 의한 공진파장의 변화는 $-0.54nm/^{\circ}C$, $-3nm/^{\circ}C$의 특성을 보였다.

• 센서학회지
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• 제9권1호
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• pp.83-89
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• 2000

TFELD의 절연층으로 사용하기 위해 ITO 유리위에 BST박막을 rf 마그네트론 스퍼터링법으로 증착시켰다. $O_2/(Ar+O_2)$의 혼합비는 10%, 기판온도는 상온에서 $500^{\circ}C$까지 변화를 주었고, 분위기압은 5 mTorr에서 30 mTorr까지 변화시켰다. 다양한 증착조건에서 성장된 BST박막의 전기적, 광학적, 구조적 및 화학량론적인 특성을 조사하였다. BST박막성장의 최적조건은 기판온도 $400^{\circ}C$, 분위기압 30 mTorr에서 구할 수 있었다. 주파수 1 kHz에서 비유전율은 254였고, 누설전류밀도는 5 MV/cm의 전계에서 $3.3{\times}10^{-7}\;A/cm^2$이하로 나타났으며, 가시광영역에서 광투과율은 82%였다.

• 한국레이저가공학회지
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• 제17권1호
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• 정보저장시스템학회논문집
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• 제1권2호
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• pp.127-131
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• 2005

We report a nanometer scale mark formation using a $PtO_x$ thin film or a TbFeCo rare-earth transition metal film and the mechanism. The multi-layer samples($ZnS-SiO_2/PtOx/ZNS-SiO_2,\;ZnS-SiO_2/TbFeCo/ZnS-SiO_2$) were prepared with a magnetron sputtering method on a polycarbonate or a glass substrate. By laser irradiation of approximately a few nanoseconds, nanometer scale marks were fabricated. During the fabrication process, the thin films were thermally reacted or inter-diffused during the laser irradiation. 75 nm bubble marks in the PtOx multi-layer sample by an approximately 4-ns laser irradiation. Inside the bubble mark, Pt particles with a few nanometer sizes are distributed. The $50{\sim}100$ nm bubble marks in the TbFeCo multi-layer sample by a few nanosecond laser irradiations. We will report the detail structure of the samples, the bubble mark formation process and the mechanism.