• 대한전자공학회논문지SD
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• 제42권1호
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• pp.39-46
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• 2005

본 연구에서는 광논리 및 광접속에 응용할 수 있는 GaAs/AIGaAs 구조의 완전 공핍 광 싸이리스터(depleted optical thyristor, DOT)에 1/4 파장 거울층 (quarter wavelength reflector stacks, QWRS)을 제작하여 특성을 측정 분석하였다. 바닥면에 위치한 QWRS는 광 방출 효율뿐만 아니라 흡수 효율을 증가시킨다. 바닥면에 QWRS를 넣은 것과 그렇지 않은 두가지의 DOT를 제작하여 비선형 S-자 형의 전류-전압 특성, 광 방출 효율 및 흡수 효율을 측정, 분석하였다. 하부 거울층을 삽입한 DOT와 기존의 DOT의 스위칭 변화는 각각 1.82 V와 1.52 V로 흡수효율에서 20 % 증가함을 보인다. 뿐만 아니라, 하부 거울층을 이용한 DOT는 기존의 소자에 비하여 발광 효율 면에서 최고 46 % 향상된 결과를 나타낸다. 스위칭 특성을 분석하기 위하여 순방향 전압에서 비선형 s-자형의 전류-전압 특성을, 역방향 전압에서 완전 공핍 전압을 모의실험을 통하여 알아보았다. 모의실험 방법으로 유한 차분 방법 (finite difference method, FDM)을 이용하여 최적화된 DOT 각 층의 두께와 도핑 농도를 구하였다.

• 소성∙가공
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• 제15권1호
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• pp.3-8
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• 2006

The demand fer small and high-capacity optical data storage devices has rapidly increased. The areal density of optical disk is increased by using higher numerical aperture objective lens and shorter wavelength source. A wafer-scale stacked micro objective lens with a numerical aperture of 0.85 and a focal length of 0.467mm for the 405nm blue- violet laser was designed and fabricated. A diffractive optical element (DOE) was used to compensate the spherical aberration of the objective lens. Among the various fabrication methods for micro DOE, the UV-replication process is more suitable fur mass-production. In this study, an 8-stepped DOE pattern as a master was fabricated by photolithography and reactive ion etching process. A flexible mold was fabricated for improving the releasing properties and shape accuracy in UV-replication process. In the replication process, the effects of exposing time and applied pressure on the replication quality were analyzed. Finally, the surface profiles of master, mold and molded pattern were measured by optical scanning profiler. The geometrical deviation between the master and the molded DOE was less than $0.1{\mu}m$. The diffraction efficiency of the molded DOE was measured by DOE efficiency measurement system which consists of laser source, sample holder, aperture and optical power meter, and the measured value was $84.5\%$.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2005년도 금형가공,미세가공,플라스틱가공 공동 심포지엄
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• pp.35-40
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• 2005

The demand for small and high-capacity optical data storage devices has rapidly increased. The areal density of optical disk is increased using higher numerical aperture objective lens and shorter wavelength source. A wafer-scale stacked micro objective lens with a numerical aperture of 0.85 and a focal length of 0.467mm for the 405nm blue- violet laser was designed and fabricated. A diffractive optical element (DOE) was used to compensate the spherical aberration of the objective lens. Among the various fabrication methods for micro DOE, the UV-replication process is more suitable for mass-production. In this study, an 8-stepped DOE pattern as a master was fabricated by photolithography and reactive ion etching process. A flexible mold was fabricated for improving the releasing properties and shape accuracy in UV-molding process. In the replication process, the effects of exposing time and applied pressure on the replication quality were analyzed. Finally, the shapes of master, mold and molded pattern were measured by optical scanning profiler. The deviation between the master and the molded DOE was less than 0.1um. The efficiency of the molded DOE was measured by DOE efficiency measurement system which consists of laser source, sample holder, aperture and optical power meter, and the measured value was $84.5\%$.

• Advances in nano research
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• 제2권1호
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• pp.23-56
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• 2014

The significant growth of the Si photovoltaic industry has been so far limited due to the high cost of the Si photovoltaic system. In this regard, the most expensive factors are the intrinsic cost of silicon material and the Si solar cell fabrication processes. Conventional Si solar cells have p-n junctions inside for an efficient extraction of light-generated charge carriers. However, the p-n junction is normally formed through very expensive processes requiring very high temperature (${\sim}1000^{\circ}C$). Therefore, several systems are currently under study to form heterojunctions at low temperatures. Among them, carbon nanotube (CNT)/Si hybrid solar cells are very promising, with power conversion efficiency up to 15%. In these cells, the p-type Si layer is replaced by a semitransparent CNT film deposited at room temperature on the n-doped Si wafer, thus giving rise to an overall reduction of the total Si thickness and to the fabrication of a device with cheaper methods at low temperatures. In particular, the CNT film coating the Si wafer acts as a conductive electrode for charge carrier collection and establishes a built-in voltage for separating photocarriers. Moreover, due to the CNT film optical semitransparency, most of the incoming light is absorbed in Si; thus the efficiency of the CNT/Si device is in principle comparable to that of a conventional Si one. In this paper an overview of several factors at the basis of this device operation and of the suggested improvements to its architecture is given. In addition, still open physical/technological issues are also addressed.

• 한국군사과학기술학회지
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• 제17권3호
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• pp.289-295
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• 2014

The composition of bright flash device is a pyrotechnic mixture consisting of metal powder, oxidizer and additives. A pyrotechnic mixture of bright flash device generates a bright flash through burning after being ignited by initiator. The function of bright flash is to distract or incapacitate electro optical sensor systems and enemy eyes temporally. This study is to develop composition of pyrotechnic mixture of bright flash and to analyze the test results by considering intensity and efficiency of light.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.91-94
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• 2022

Top emission organic light-emitting diode is commonly used because of high efficiency and good color purity than bottom - emission organic light-emitting device. Unlike BEOLED, TEOLED contain semi-transparent metal cathode. Because of semi-transparent cathode, micro cavity effect occurs in TEOLED. We optimized this effect by changing the thickness of hole injection layer. Device consists of is indium-tin-oxide / N,N'-Di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine (x nm) / tris-(8-hydroxyquinoline) aluminum (50nm) / LiF(0.5nm) / Mg:Ag (1:9), and we changed NPB thickness which is used as HTL in our device in order to study how micro cavity effects are changed by optical path. As the results, NPB thickness at 35nm showed the current efficiency of 8.55Cd/A.

• 한국산학기술학회논문지
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• 제15권7호
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• pp.4463-4468
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• 2014

태양광 모듈 효율의 증가를 위해 렌즈나 반사판 등을 이용한 집광 시스템 개발이 활발하게 진행되고 있으며, 집광장치는 일반적으로 렌즈를 사용하거나 고집속비의 광학장치를 이용하여 태양광 추적형으로 설계하여 고집속화를 추구하고 있다. 그러나 집속비에 비례하여 열로 소산되는 에너지 밀도가 증가하므로, 고집속에 따른 태양전지 온도상승에 의한 태양전지 효율 저하를 방지하기 위해 집광장치의 냉각에 유의해야 한다. 본 논문에서는 이러한 여러 가지 제약 조건을 피하여, 저가격의 반사형 광학장치를 이용한 경제적인 저집광형 태양광 모듈 시스템을 연구 개발하였다. 일반모듈에 저집광장치를 사용하여 태양광 모듈의 발전효율을 증대 시키면서 집광으로 인해 발생하는 열을 냉각장치를 통해 방출하였다. 제안된 저집광형 냉각장치(MCS, Micro Cooling System)의 특징은 모세관력에 의한 자연 순환 방식으로서 외부 동력원이 불필요하며, 유체 상변환시의 잠열을 이용함으로써 고성능 냉각 구현이 가능하다. 117W 태양광 모듈에 반사판을 설치하고 냉각장치가 있는 모듈과 냉각장치가 없는 모듈을 비교 하였다. 냉각장치를 설치한 모듈에서의 발전량이 28% 증가하였다.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.307-316
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• 2014

Improved power conversion efficiency of hybrid solar cells with ITO/ZnO seed layer/ZnO NRs/ZnS QDs/P3HT/PCBM/Ag structure was obtained by optimizing the growth period of ZnO nanorods (NRs). ZnO NRs were grown using a hydrothermal method on ZnO seed layers, while ZnS quantum dots (QDs) (average thickness about 24 nm) were fabricated on the ZnO NRs by the successive ionic layer adsorption and reaction (SILAR) technique. Morphology, crystalline structure and optical absorption of layers were analyzed by a scanning electron microscope (SEM), X-ray diffraction (XRD) and UV-Visible absorption spectra, respectively. The XRD results implied that ZnS QDs were in the cubic phase (sphalerite). Other experimental results showed that the maximum power conversion efficiency of 4.09% was obtained for a device based on ZnO NR10 under an illumination of one Sun (AM 1.5G, $100mW/cm^2$).

• JSTS:Journal of Semiconductor Technology and Science
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• 제7권3호
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• pp.196-208
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• 2007

An analytical model is proposed for an optically controlled Metal Semiconductor Field Effect Transistor (MESFET), known as Optical Field Effect Transistor (OPFET) considering the diffusion fabrication process. The electrical parameters such as threshold voltage, drain-source current, gate capacitances and switching response have been determined for the dark and various illuminated conditions. The Photovoltaic effect due to photogenerated carriers under illumination is shown to modulate the channel cross-section, which in turn significantly changes the threshold voltage, drainsource current, the gate capacitances and the device switching speed. The threshold voltage $V_T$ is reduced under optical illumination condition, which leads the device to change the device property from enhancement mode to depletion mode depending on photon impurity flux density. The resulting I-V characteristics show that the drain-source current IDS for different gate-source voltage $V_{gs}$ is significantly increased with optical illumination for photon flux densities of ${\Phi}=10^{15}\;and\;10^{17}/cm^2s$ compared to the dark condition. Further more, the drain-source current as a function of drain-source voltage $V_{DS}$ is evaluated to find the I-V characteristics for various pinch-off voltages $V_P$ for optimization of impurity flux density $Q_{Diff}$ by diffusion process. The resulting I-V characteristics also show that the diffusion process introduces less process-induced damage compared to ion implantation, which suffers from current reduction due to a large number of defects introduced by the ion implantation process. Further the results show significant increase in gate-source capacitance $C_{gs}$ and gate-drain capacitance $C_{gd}$ for optical illuminations, where the photo-induced voltage has a significant role on gate capacitances. The switching time ${\tau}$ of the OPFET device is computed for dark and illumination conditions. The switching time ${\tau}$ is greatly reduced by optical illumination and is also a function of device active layer thickness and corresponding impurity flux density $Q_{Diff}$. Thus it is shown that the diffusion process shows great potential for improvement of optoelectronic devices in quantum efficiency and other performance areas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.972-975
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• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.