• Title/Summary/Keyword: Optical Device Efficiency

검색결과 283건 처리시간 0.028초

Polymer/fullerene/LiF inter-layer BHJ 유기태양전지의 광학 및 전기적 특성에 대한 연구 (Electrical and optical characterizations of OSCs based on polymer/fullerene BHJ structures with LiF inter-layer)

  • 송윤석;김승주;류상욱
    • 반도체디스플레이기술학회지
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    • 제10권1호
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    • pp.27-32
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    • 2011
  • In this study, we have investigated the power conversion efficiency of organic solar cells utilizing conjugated polymer/fullerene bulk-hetero junction(BHJ) device structures. We have fabricated poly(3-hexylthiophene)(P3HT), poly[2methoxy-5-(3',7'-dimethyloctyl-oxy)-1-4-phenylenevinylene] as an electron donor, [6,6]-phenyl $C_{61}$ butyric acid methylester(PCBM-$C_{61}$)as an electron acceptor, and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS) used as a hole injection layer(HIL), after fabricated active layer, between active layer and metal cathode(Al) deposited LiF interlayer(5 nm). The properties of fabricated organic solar cell(OSC) devices have been analyzed as a function of different thickness. The electrical characteristics of the fabricated devices were investigated by means J-V, fill factor(FF) and power conversion efficiency(PCE). We observed the highest PCEs of 0.628%(MDMO-PPV:PCBM-$C_{61}$) and 2.3%(P3HT:PCBM-$C_{61}$) with LiF inter-layer at the highest thick active layer, which is 1.3times better than the device without LiF inter-layer.

Electroluminescence Characteristics of a New Green-Emitting Phenylphenothiazine Derivative with Phenylbenzimidazole Substituent

  • Ahn, Yeonseon;Jang, Da Eun;Cha, Yong-Bum;Kim, Mansu;Ahn, Kwang-Hyun;Kim, Young Chul
    • Bulletin of the Korean Chemical Society
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    • 제34권1호
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    • pp.107-111
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    • 2013
  • A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

유기태양전지 계면 기술 동향 (Overview of Interface Engineering for Organic Solar Cells)

  • 김기환
    • 접착 및 계면
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    • 제22권4호
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    • pp.113-117
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    • 2021
  • 차세대 태양전지 중 유기물을 활용하는 유기 태양전지는 미래 핵심 에너지 생산 장치로, 최근 급격한 성장세와 함께 많은 주목을 보이고 있다. 유기 태양전지 효율 향상을 위해서 계면 공학 기술이 많이 응용되고 있다. 특히 양전극인 양극과 음극에 계면 공학을 활용하여 에너지 준위 조절을 통한 소자 효율 향상과, 궁극적으로 적층형 유기 태양전지에 계면 공학을 활용하여 우수한 전기적, 광학적 성능을 이끌어 내어 고성능 소자를 제작하는 방식이 널리 활용되고 있다. 본 총설에서는 유기태양전지에 활용되고 있는 계면 공학에 대하여 최근 연구 동향을 요약 및 소개하고 고성능 유기 태양전지 제작 방식에 대하여 논의하고자 한다.

Enhanced Efficiency of Transmit and Receive Module with Ga Doped MgZnO Semiconductor Device by Growth Thickness

  • Shim, Bo-Hyun;Jo, Hee-Jin;Kim, Dong-Jin;Chae, Jong-Mok
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권1호
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    • pp.39-43
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    • 2016
  • The structural, electrical properties of Ga doped MgZnO transparent conductive oxide (TCO) films by ratio-frequency(RF) magnetron sputtering were investigated. Ga doped MgZnO TCO films were deposited on the sapphire substrates at $200^{\circ}C$ varying growth thickness 200 to 600 nm. The optical properties of Ga doped MgZnO TCO films were showed above 85% transmittance from 300 to 1000 nm region. In addition, the current density ($J_{SC}$) of $Cu(In,Ga)Se_2$ (CIGS) solar cells was improved by using the MgZnO:Ga films of 500 nm thickness because of outstanding electrical properties. The $Cu(In,Ga)Se_2$ solar cells with MgZnO:Ga transparent conducing layer yielded an efficiency of 9.8% with current density ($31.8mA/cm^2$), open circuit voltage (540.2 V) and fill factor (62.2) under AM 1.5 illumination.

포물면 집광거울 방식의 태양광 집광채광시스템 개발 (Development of Solar Daylighting System Using Parabolic Mirrors)

  • 성태경;이충식;김종민;정채봉;김병철
    • 설비공학논문집
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    • 제25권5호
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    • pp.240-245
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    • 2013
  • We developed a parabolic reflector based daylighting system which can be used as an alternative indoor daytime lighting device such as for fluorescent lamps. The system comprises three main components : a daylight concentrator made of 4 pairs of parabolic reflectors and mirrors, a silica optical fiber bundle based light transmitter, and 4 light diffusers for the final indoor delivery of the collected daylight. We analyzed the performance of the system and revealed the system efficiency and daylighting factor. All test methods follow the rule, NR PV601 : 2007-daylighting system, governed by Korea Energy Management Corporation.

InP/ZnSe/ZnS: A Novel Multishell System for InP Quantum Dots for Improved Luminescence Efficiency and Its application in a Light-Emitting Device

  • Ippen, Christian;Greco, Tonino;Wedel, Armin
    • Journal of Information Display
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    • 제13권2호
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    • pp.91-95
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    • 2012
  • Indium phosphide (InP) quantum dots (QDs) are considered alternatives to Cd-containing QDs for application in light-emitting devices. The multishell coating with ZnSe/ZnS was shown to improve the photoluminescence quantum yield (QY) of InP QDs more strongly than the conventional ZnS shell coating. Structural proof for this system was provided by X-ray diffraction and transmission electron microscopy. QY values in the range of 50-70% along with peak widths of 45-50 nm can be routinely achieved, making the optical performance of InP/ZnSe/ZnS QDs comparable to that of Cd-based QDs. The fabrication of a working electroluminescent light-emitting device employing the reported material demonstrated the feasibility of the desired application.

A study on the characteristics of SrS:Cu TFEL devices prepared by hot wall deposition

  • Lee Sang-Tae
    • Journal of Advanced Marine Engineering and Technology
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    • 제30권4호
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    • pp.514-519
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    • 2006
  • SrS:Cu, Cl thin films have been grown by the hot wall technique with S furnace placed on the outside of the growth chamber in order to investigate the crystallographic and optical characteristics. The films have a good crystallinity independent of CuCl wall temperature and PL characteristics showed a peak assigned by the transition form $3d^94s^1\;(^3Eg)$ to $3d^{10}\;(^1A_{1g})$ of $Cu^+$ center. It has also been found that. from the PLE spectra, $Cu^+$ luminescent centers are doped in the host materials. The EL emission from SrS:Cu-based device showed a greenish-blue but shifted to short wavelength compared to SrS:Ce-based EL. The device was obtained the maximum luminance of $110cd/m^2$ and the maximum luminous efficiency of $0.1\;lm/W$ at $V_{40}$.

콜로이드 양자점 태양전지의 최근 발전 동향: 양자점 합성과 소자 구조에서의 다양한 접근 방법 (Recent Progress in Colloidal Quantum Dot Solar Cells: Novel Strategies in Synthesis and Device Structure)

  • 최민재;정연식
    • Current Photovoltaic Research
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    • 제2권4호
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    • pp.157-167
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    • 2014
  • Colloidal quantum dot (CQD) solar cells have attracted great attention due to their cost-effectiveness and solution-processability, as well as their size-dependent optical and electrical properties. The power conversion efficiency of CQD solar cells has rapidly increased up to ~8.6%, which corresponds to the 3 - 4 fold improvement during the last 3 - 4 years. Up to now, there have been many pioneering results in CQD solar cells. Here, we review the recent progress of CQD solar cells including CQD synthesis strategy and device structure engineering.

가역적 Hologram 소자개발을 위한 비정질 (Se,S)계 박막 특성에 관한 연구 (A study on the properties of amorphous (Se,S)-system thin films for reversible hologram device development)

  • 김상덕;이재규;김종빈
    • 전자공학회논문지A
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    • 제31A권12호
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    • pp.71-79
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    • 1994
  • In this paper, $As_{40}Se_{50-x}S_[x}Ge_{10}$(x=0, 25, 35, at.%) bulk and thin films, to develope device of reversible hologram, proved amorphous by X-RD analysis. On the thin films with composition rate, as Se-doped-quantity increased, absorption edge shifted to long wavelength, and we found that reversible photodarkening effect occurred when thin films are exposed and annealed. Optical energy gap was larger when thin films are annealed than exposed. In this effect thin films structurally stabilized by annealing. It is to formed grating hologram by the bragg method on the $As_{40}Se_{15}S_[35}Ge_{10}$ thisn films with the best transmittance properties As polariging angle grew larger, we found that maximum diffraction efficiency became smaller, and obtained it of 4.5% on the thin fim thicknesss of 0.6 m, polarizing angle of 40$^[\circ}$ and exposing for 20sec.

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단일 호스트를 이용하여 선택적으로 도핑된 OLEDs의 전기 및 광학적 특성 (Electrical and Optical Properties of Organic Light Emission Devices using Selective Doping in a Single Host)

  • 서유석;문대규
    • 한국전기전자재료학회논문지
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    • 제23권2호
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    • pp.124-127
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    • 2010
  • We have fabricated organic white light emitting device by two colors from yellow fluorescence material (5,6,11,12)-Tetraphenylnaphthacene(Rubrene) and blue phosphorescent material (iridum-bis(4,6-difluorophenylpyridinato-N,C2)-picolinate(FIrpic). The threshold voltage is 5.3 V, and the brightness reaches 1000 cd/$m^2$ at 11 V, 14.5 mA/$m^2$. The color of the light corresponds to a CIE coordinate of (0.30, 0.38). The highest efficiency of the device can reach 9.5 cd/A or 5.5 lm/W at 6 V, 0.1 mA/$m^2$.