• Journal of Communications and Networks
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• v.2 no.1
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• pp.5-17
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• 2000

cdma2000 offers several enhancement as compared to TIA/EIA-95, although it remains fully compatible with TIA/EIA-95 systems and allows for a smooth migration from one to the other-Major new capability include:1)connectivity to GSM-MAP in addition to IP and IS-41 networks; 2) new layering with new LAC and MAC architectures for improved service multiplexing and QoS management and efficient use of radio resource ;3) new bands and band widths of operation in support of various operator need and constraints, as well as desire for a smooth and progressive migration to cdma 2000; and 4) flexible channel structure in support of multiple services with various QoS and variable transmission rates at up to 1 Mbps per channel and 2 Mbps per user. Given the phenomenal success of wireless services and desire for higher rate wireless services. improved spectrum efficiency was a major design goal in the elaboration of cdma2000. Major capacity enhancing features include; 1) turbo coding for data transmission: 2)fast forward link power control :3) forward link transmit diversity; 4) support of directive antenna transmission techniques; 5) coherent reverse link structure; and 6) enhanced access channel operation. As users increasingly rely on their cell phone at work and at home for voice and data exchange, the stand-by time and operation-time are essential parameters that can influence customer's satisfaction and service utilization. Another major goal of cdma2000 was therefore to enable manufacturers to further optimize power utilization in the terminal. Major battery life enhancing features include; 1) improved reverse link performance (i.e., reduced transmit power per information bit; 2) new common channel structure and operation ;3) quick paging channel operation; 4) reverse link gated transmission ; and 5) new MAC stated for efficient and ubiquitous idle time idle time operation. this article provides additional details on those enhancements. The intent is not to duplicate the detailed cdma2000 radio access network specification, but rather to provide some background on the new features of cdma2000 and on the qualitative improvements as compared to the TIA/EIA-95 based systems. The article is focused on the physical layer structure and associated procedures. It therefore does not cover the MAC, LAC, radio resource management [1], or any other signaling protocols in any detail. We assume some familiarity with the basic CDMA concepts used in TIA/EIA-95.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.12 no.1
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• pp.413-435
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• 2018

Although the accuracy of handwritten character recognition based on deep networks has been shown to be superior to that of the traditional method, the use of an overly deep network significantly increases time consumption during parameter training. For this reason, this paper took the training time and recognition accuracy into consideration and proposed a novel handwritten character recognition algorithm with newly designed network structure, which is based on an extended nonlinear kernel residual network. This network is a non-extremely deep network, and its main design is as follows:(1) Design of an unsupervised apriori algorithm for intra-class clustering, making the subsequent network training more pertinent; (2) presentation of an intermediate convolution model with a pre-processed width level of 2;(3) presentation of a composite residual structure that designs a multi-level quick link; and (4) addition of a Dropout layer after the parameter optimization. The algorithm shows superior results on MNIST and SVHN dataset, which are two character benchmark recognition datasets, and achieves better recognition accuracy and higher recognition efficiency than other deep structures with the same number of layers.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.2
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• pp.132-139
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• 2001

We considered the uniformity of fabricated micromirror arrays by characterizing the fabrication process and calculating the appropriate driving voltages of micromirrors used as virtual photomask in maskless photolithography. The uniformity of the micromirror array in terms of driving voltage and optical characteristics is adversely affected by factors, such as the air gap between the bottom electrode and the mirror plate, the spring shape and the deformation of the mirror plate or torsion spring. The thickness deviation of the photoresist sacrificial layer, the misalignment between mirror plate and bottom electrode, the aluminum deposition condition used to produce the spring and the mirror plate, and initial mirror deflection were identified as key factors. Their importance lies in the fact that they are related to air gap deviations under the mirror plate, asymmetric driving voltages in left and right mirror directions, and the deformation of the Al sring or mirror plate after removal of the sacrificial layer. The plasma ashing conditions used for removing the sacrificial layer also contributed to the deformation of the mirror plate and spring. Driving voltages were calculated for the pixel operation of the micromirror array, and the non-uniform characteristics of fabricated micromirrors were taken into consideration to improve driving performance reliability.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1038-1041
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• 2006

We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.871-877
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al, glass substrate/ITO/Eu(TTA)$_3$(phen)/Al and glass substrate/ITO/Eu(TTA)$_3$(phen)/AlQ$_3$/Al structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and Tris(8-hydroxyquinoline) aluminu-m(AlQ$_3$) as an electron transporting layer. Electrolumescent(EL) and I-V characteristics of Eu(TTA)$_3$-(-phen) were investigated. These structures show the red EL spectra, which are almost the same at the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a operation voltage of 9V. Electrical transporting phenomena of these structures were explained using the trapped-charge-limited current model with I-V characteristics.

• Nuclear Engineering and Technology
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• v.42 no.4
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• pp.434-441
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• 2010

The activation products of aluminum and argon are key radionuclides for operational and environmental radiological safety during the normal operation of open-tank-in-pool type research reactors using aluminum-clad fuels. Their activities measured in the primary coolant and pool surface water of HANARO have been consistent. We estimated their sources from the measured activities and then compared these values with their production rates obtained by a core calculation. For each aluminum activation product, an equivalent aluminum thickness (EAT) in which its production rate is identical to its release rate into the coolant is determined. For the argon activation calculation, the saturated argon concentration in the water at the temperature of the pool surface is assumed. The EATs are 5680, 266 and 1.2 nm, respectively, for Na-24, Mg-27 and Al-28, which are much larger than the flight lengths of the respective recoil nuclides. These values coincide with the water solubility levels and with the half-lives. The EAT for Na-24 is similar to the average oxide layer thickness (OLT) of fuel cladding as well; hence, the majority of them in the oxide layer may be released to the coolant. However, while the average OLT clearly increases with the fuel burn-up during an operation cycle, its effect on the pool-top radiation is not distinguishable. The source of Ar-41 is in good agreement with the calculated reaction rate of Ar-40 dissolved in the coolant.

• Advances in pediatric surgery
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• v.1 no.2
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• pp.181-185
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• 1995

Segmental intestinal dilatation is rare, which causes symptom of bowel obstruction and requires resection. The resection is not only diagnostic but also curative procedure. Recently, author experienced 2 cases of segmental dilatation of the ileum due to focal agenesis of the intestinal muscularis in 7 day & 4 day-old female neonates. The post operative recovery was excellant in the first case after resection of dilated ileum(15cm in length) and end to end anastomosis, and discharged at 20th day. But in the second case, the passage disturbance was not relieved after resection of dilated ileum (30cm in length), and author re-resected 80cm more of dilated proximal ileum at 2 weeks after the first operation. This baby discharged after diarrhea control with Loperin on 1 month after the second operation. Final histologic examination showed 1) normal population of ganglion cells in both narrowed & dilated ileum in both cases. 2) focal abscence of muscularis propria in both cases. 3) relative hypertrophy of inner circular muscle layer and thinned, multiple fragmented outer longitudinal muscle layer in case 2.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.15-18
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• 2003

Pentacene OTFTs of $Al_2O_3$ insulator treated with a diluted PMMA were fabricated for the application of the low voltage operation and large area displays. The operation voltage of 15 V and the mobility of 0.35 $cm^2/Vsec$ are obtained even adopting the thick dielectric of 100 nm which was deposited by atomic layer deposition at the temperature of $150^{\circ}C$. The current on-off ratio was $4.1{\times}10^4$ for the OTFTs treated with 9:1 PMMA and good saturation characteristics were obtained as drain voltage increases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Corrosion Science and Technology
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• v.3 no.4
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• pp.161-165
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• 2004

Aluminum source in an Al-Fe coating reacts with molten carbonate and develops a protective $LiAlO_2$ layer on the coating surface during operation of molten carbonate fuel cells (MCFC). However, if aluminum content in an Al-Fe coating decreases to a critical level for some reasons during MCFC operation, a stable and continuous $LiAlO_2$ protective layer can no longer be maintained. The aluminum content in an Al-Fe coating can be depleted by two different processes; one is by corrosion reaction at the surface between the aluminum source in the coating and molten carbonate, and the other is inward-diffusion of aluminum atoms within the coating into a substrate. In these two respects, therefore, the decreasing rate of aluminum concentration in an Al-Fe coating was measured, and then the influences of these two aspects on the lifetime of Al-Fe coating were investigated, respectively.