• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• New & Renewable Energy
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• v.3 no.1 s.9
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• pp.60-67
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• 2007

Catalyst coated membrane [CCM] type and catalyst coated substrate [CCS] type of membrane electrode assembly [MEA] were manufactured and evaluated their performance. Degradation test were conducted to find the difference of long term stability in two types of MEA and the factor for performance degradation problem occurred. Performance degradation test of single cell in two different types of MEA were carried out when current density was $200mA/cm^{2}$. The degradation test had proceeded for 230 hours and performance degradation was checked by I-V curve and impedance measurement at regular intervals. Also, MEA before/after operation and changes of catalyst layer were characterized by SEM, TEM, and XRD. Maximum power density of CCM type was higher than that of CCS type. Meanwhile, an increase of particle size of catalyst and an increase of impedance resistance after long term operation were observed. In the case of using CCM type MEA, the performance was deteriorated 38% of initial performance. In the case of using CCS type MEA, the performance was deteriorated 43% of initial performance. In consideration of difference of initial performance, performance of CCM type is higher than that of CCS type but both types had similar problems during degradation test.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.195.1-195.1
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• 2011

This paper presents an experimental study on a new potential geothermal energy source obtained from tunnel structures. An "energy textile", which is a textile-type ground heat exchanger, was fabricated between a shotcrete layer and a guided drainage geotextile in the tunnel lining system. To examine the long-term thermal behavior of the energy textile, the difference in temperatures of the inlet and outlet fluid circulating through the heat exchange pipe within the energy textile was monitored using a constant-temperature water bath. Daily heat exchange rate of the energy textile during cooling operation was estimated from the measured temperatures of the inlet and outlet fluid through the energy textile. The air and ground temperature was also continuously monitored. The operation of the energy textile as a ground heat exchanger was simulated using a 3D numerical CFD model (Fluent). The thermal conductivity of shotcrete and concrete lining components and temperature variation of air in the tunnel were incorporated in the model. The numerical analysis shows a good agreement with the long-term monitoring result.

• Membrane and Water Treatment
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• v.5 no.1
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• pp.1-14
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• 2014

A pilot-scale hybrid membrane bioreactor (HMBR) for real municipal wastewater treatment was developed by adding biofilm carriers into a conventional membrane bioreactor, distribution and dynamic changes of the extracellular polymeric substances (EPS) and their roles in membrane fouling were investigated. The results showed that the concentrations of loosely bond EPS (LB-EPS) and tightly bond EPS (TB-EPS) in activated sludge, carrier biofilm and sludge cake layer have been increased significantly with the running time of HMBR, during operation of the HMBR, EPS demonstrated positive correlations with membrane fouling. Compared to TB-EPS, LB-EPS showed more significant correlations with sludge physical properties and specific resistance to filtration (SRF) in HMBR, and thus demonstrated that LP-EPS have a stronger potential of fouling than TB-EPS. It was also found that a lower organic loading in HMBR could result a significant increase in EPS concentration, which would in turn influence membrane fouling in HMBR. This critical investigation would contribute towards a better understanding of the behavior, composition and fouling potential of EPS in HMBR operation.

• Journal of the Korean Applied Science and Technology
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• v.24 no.2
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• pp.140-148
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• 2007

As an additional high purification method of p-dioxanone monomer for a high molecular weight polymer, the sweating operation of crystalline layer obtained by layered melt crystallization from p-dioxanone-diethylene glycol system was studied. Purity and yield of p-dioxanone crystal depended mainly on the sweating temperature and sweating time. Increasing sweating time and sweating temperature, the purity of p-dioxanone crystal increase, whereas the yield of that decrease, respectively. Through the optimization of sweating operation, p-dioxanone crystal can be upgraded to very high purity over 99.9 % suited to monomer for polymerization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.53-56
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(p-hen)/Al(B) and glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/AlQ$_3$/Al(C) structures were fabricated by vacuum evaporation method. where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material. and tris(8-hydroxyquinoline)Aluminum(AlQ$_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(Phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/$\textrm{cm}^2$ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped- charge-limited current model with I-V characteristics.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.17-25
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• 2017

Recently, research and application for a power module have been actively studied according to the increasing demand for the production of vehicles, smartphones and semiconductor devices. The power modules based on the transient liquid phase (TLP) technology for bonding of power semiconductor devices have been introduced in this paper. The TLP bonding has been widely used in semiconductor packaging industry due to inhibiting conventional Pb-base solder by the regulation of end of life vehicle (ELV) and restriction of hazardous substances (RoHS). In TLP bonding, the melting temperature of a joint layer becomes higher than bonding temperature and it is cost-effective technology than conventional Ag sintering process. In this paper, a variety of TLP bonding technologies and their characteristics for bonding of power module have been described.

• KSBB Journal
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• v.23 no.2
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• pp.169-176
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• 2008

The concentration of fresh gel from Aloe vera L. by using ulfrafiltration (UF) process was investigated and analyzed. The two membranes (organic and ceramic) with different molecular weight cut-off (MWCO) and modules (flat sheet and tubular) was used. Under optimum operation conditions, ceramic (zirconium dioxide) tubular membrane with MWCO of 50 kDa resulted in higher flux, less fouling, more turbid, higher total solid, higher polysaccharide and less aloin content. Optimum operation conditions were transmembrane pressure of 1.0 bar, feed velocity of 240 L/hr and temperature of $23^{\circ}C$. Volume concentration factor of aloe gel was 3.13 at permeate flux of $51.1\;L/m^2{\cdot}hr$ after processing time of 1.66 hr. Aloin in fresh aloe gel by UF process was effectively removed as permeate and bioactive polysaccharide content was 2.1 times higher than that of fresh aloe gel. These results allowed a very good level of concentration degree and polysaccharide content. Thus, ultrafiltration process of this study was suitable for the concentration of fresh aloe gel though the aloe concentrate showed both the viscosity decrease and partially separation of liquid layer during storage at $4^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.