• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.289-290
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• 2006

We report a study of Zn(S)Se/GaAs heterojunction solar cells grown by molecular beam epitaxy (MBE). Zn(S)Se/GaAs heterostructures prepared under different conditions were characterized in-situ by reflection high-energy electron diffraction (RHEED). Structural and electrical properties were investigated with double crystal X-ray diffraction and current-voltage characteristics, respectively. The fabricated $n-ZnS_{0.07}Se_{0.93}/p-GaAs$ solar cell (SC #2) exhibited open circuit voltage($V_{oc}$) of 0.37 V, short circuit current($I_{sc}$) of $1.7{\times}10^{-2}$ mA, fill factor of 0.62 and conversion efficiency of 7.8 % under 38.5 $mW/cm^2$ illumination.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.104-108
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• 2012

Flexible organic thin film solar cell device with Bulk Hetero-Junction (BHJ) structure was fabricated with blended conjugated polymer of PCDTBT : $PC_{71}BM$ as active layer. Surface of ITO anode for the organic solar cell device was treated with ozone. The organic solar cell device with bare ITO showed short circuit current density ($J_{sc}$) of $8.2mA/cm^2$, open-circuit voltage ($V_{oc}$) of 0.73V, fill factor (FF) of 0.36, and power conversion efficiency (PCE) of 2.16%, respectively. The organic solar cell device with ozone treated ITO anode revealed distinctively improved performance parameters:$J_{sc}$ of $9.8mA/cm^2$, $V_{oc}$ of 0.82V, FF of 0.43, PCE(${\eta}$) of 3.42%.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.3
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• pp.289-296
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• 2014

Here, we have studied the effect of water added electrolyte on the photovoltaic performance of dye-sensitized solar cells (DSSCs). It was found that open-circuit voltage ($V_{oc}$) increased and short-circuit current density ($j_{sc}$) decreased with the increase of the amount of added water in the electrolyte of the DSSCs. Electrochemical impedance spectroscopy (EIS) study showed that the electrolyte with added water shifted the dye loaded $TiO_2$ conduction band upward that eventually increased $V_{oc}$ of the cells. On the other hand, the upward shift of $TiO_2$ conduction band decreased the driving force for the electron injection from the lowest unoccupied molecular orbital (LUMO) of the dye molecules to the conduction band of $TiO_2$ that resulted in decreased $j_{sc}$.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.411-414
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• 2013

In order to enhance the photovoltaic property of the CdS/CdSe co-sensitized quantum dot sensitized solar cells (QDSSCs), the surface of nanoporous $TiO_2$ photoanode was modified by ultrathin $Al_2O_3$ layer before the deposition of quantum dots (QDs). The $Al_2O_3$ layer, dip-coated by 0.10 M Al precursor solution, exhibited the optimized performance in blocking the back-reaction of the photo-injected electrons from $TiO_2$ conduction band (CB) to polysulfide electrolyte. Transient photocurrent spectra revealed that the electron lifetime (${\tau}_e$) increased significantly by introducing the ultrathin $Al_2O_3$ layer on $TiO_2$ surface, whereas the electron diffusion coefficient ($D_e$) was not varied. As a result, the $V_{oc}$ increased from 0.487 to 0.545 V, without appreciable change in short circuit current ($J_{sc}$), thus inducing the enhancement of photovoltaic conversion efficiency (${\eta}$) from 3.01% to 3.38%.

• Current Photovoltaic Research
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• v.7 no.3
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• pp.61-64
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• 2019

In this study, we investigate organic-inorganic hybrid solar cells with a very simple three-layer structure (Al/n-Si/PEDOT:PSS). The performance of hybrid solar cells is optimized by controlling the sheet resistance and optical transmittance of the PEDOT:PSS layers. As the thickness of the PEDOT:PSS layer decreases, the optical absorption of the n-Si increases, which greatly improves the short-circuit current density ($J_{SC}$) of devices, but the increase in sheet resistance leads to a decrease in the open-circuit voltage ($V_{OC}$) and the fill factor (FF). The solar cell with the 180-nm thick PEDOT:PSS layer shows a highest efficiency of 8.45% ($V_{OC}$: 0.435 V, $J_{SC}$: $33.7mA/cm^2$, FF: 57.5%). Considering these results, it is expected that the optimizing process for the sheet resistance and transmittance of the PEDOT:PSS layer is essential for producing high-efficiency organic-inorganic hybrid solar cells and will serve as an important basis for achieving low-cost, high-efficiency solar cells.

• ETRI Journal
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• v.41 no.2
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• pp.254-261
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• 2019

Distinct from conventional energy-harvesting (EH) technologies, such as the use of photovoltaic, piezoelectric, and thermoelectric effects, betavoltaic energy conversion can consistently generate uniform electric power, independent of environmental variations, and provide a constant output of high DC voltage, even under conditions of ultra-low-power EH. It can also dramatically reduce the energy loss incurred in the processes of voltage boosting and regulation. This study realized betavoltaic cells comprised of p-i-n junctions based on silicon carbide, fabricated through a customized semiconductor recipe, and a Ni foil plated with a Ni-63 radioisotope. The betavoltaic energy converter (BEC) includes an array of 16 parallel-connected betavoltaic cells. Experimental results demonstrate that the series and parallel connections of two BECs result in an open-circuit voltage $V_{oc}$ of 3.06 V with a short-circuit current $I_{sc}$ of 48.5 nA, and a $V_{oc}$ of 1.50 V with an $I_{sc}$ of 92.6 nA, respectively. The capacitor charging efficiency in terms of the current generated from the two series-connected BECs was measured to be approximately 90.7%.

• Journal of the Korea Safety Management & Science
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• v.4 no.2
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• pp.199-207
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• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• Transactions on Electrical and Electronic Materials
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• v.14 no.3
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• pp.160-163
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• 2013

We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Korean Journal of Materials Research
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• v.28 no.11
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• pp.680-684
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• 2018

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A $POCl_3$ diffusion doping process is used to produce a p-n junction solar cell device based on a polySi wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage($V_{oc}$) is 0.59 V and the short circuit current($I_{sc}$) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6 %, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage($V_{PC-AFM}$) at which the current is 0 A in the I-V characteristic curves increases sharply up to $18W/m^2$, peaking and slowly falling as light intensity increases. Here, $V_{PC-AFM}$ at $18W/m^2$ is 0.29 V, which corresponds to 59 % of the average $V_{oc}$ value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

• Current Photovoltaic Research
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• v.10 no.2
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• pp.33-38
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• 2022

Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (J_SC). In this study, we have demonstrated a path to overcome deficiency in J_SC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (T_RTA), also it is observed that film structure changes from cube-like to plate-like structure with T_RTA. The maximum J_SC of 23.1 mA cm^-2 was observed for 400℃ with an open-circuit voltage (V_OC) of 0.140 V for the same temperature. The highest performance of 2.21% with J_SC of 18.6 mA cm^-2, V_OC of 0.290 V, and fill factor (FF) of 40.9% is observed for a T_RTA of 300℃. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in J_SC is approximately 80% while a loss in V_OC of about 20% has been observed.