• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1876-1878
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• 1996

This paper describes the combination surge generator for applying performance tests of surge protective devices. The $8/20{\mu}s$ waveform applies to low impedance circuits and components and is commonly used to determine the characteristics of surge protective devices. And the $1.2/50{\mu}s$ waveform applies to high impedance circuits and components and is used for testing dielectric behavior. Therefore, the combination surge generator, which generates $1.2/50{\mu}s$ voltage waveform under open-circuit conditions and $8/20{\mu}s$ current waveform under short-circuit condition, was proposed. Also this generator can produce $10/1000{\mu}s$ as well as $0.5{\mu}s/100kHz$ ring waveform.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.115-118
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• 2005

Organic photovoltaic properties were studied in $CuPc/C_{60}$ and $ZnPc/C_{60}$ heterojunction structure by varying the organic layer thicknesses. Current density-voltage characteristics of organic photovoltaic cells were measured using Keithley 236 source-measure unit and a 500 W xenon lamp (ORIEL 66021) for a light source. From the analyses of current-voltage characteristics such as short-circuit current density, open-circuit voltage and power conversion efficiency, optimum thickness of the organic layer were obtained.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.173-184
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• 1994

BiCMOS circuits mixed with CMOS and bipolar technologies show peculiar fault characteristics that are different from those of other technoloties. It has been reported that because most of short faults in BiCMOS circuits cause logically intermediate level at outputs, current monitoring method is required to detect these faluts. However current monitoring requires additional hardware capabilities in the testing equipment and evaluation of test responses can be more difficult. In this paper, we analyze the characteristics of faults in BiCMOS circuit together with their test methods and propose a new design technique for testability to detect the faults by logic monitoring. An effective method to detect the transition delay faults induced by performance degradation by the open or short fault of bipolar transistors in BiCMOS circuits is presented. The proposed design-for-testability methods for BiCMOS circuits are confirmed by the SPICE simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.311-312
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• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• Journal of Korean Society on Water Environment
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• v.28 no.6
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• pp.917-922
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• 2012

In order to improve applicability of a microbial fuel cell the laboratory-scaled study has been performed by adopting an air-cathode MFC system with high concentrated anaerobic slugies in this study. The concentrations of microbes are grouped into three types, Type A (TS 1.7%), Type B (TS 1.1%) and Type C (TS 0.51%). The open circuit voltage $(V_{oc})$ characteristics showed that the medium microbes concentration of 1.10% (Type B) kept a constant voltage of 1.0 V for 150 hours, which showed the longest time among three types (Type A and Type C). The discharge charge curves for a closed circuit with $500 \Omega$ also showed that Type B generated a stable discharge voltage of 0.8 V for a longer time as in the open circuit voltage case. This could be explained by the relatively large amount of the attached microbes. Under the $V_{oc}$condition the COD removal efficiency of Type B was found to be low for a long time, but those of Type A and C were found to be high for a short period of time. Therefore, the suspended microbes could decrease the coulombic efficiency. It was concluded that the high $V_{oc}$ was caused by low COD and the $V_{oc}$ became low after the COD removal. The COD reduction resulted in an unstable and low working voltage. From the polarization characteristics Type A was found to show the highest power density of $193\;mW/m^2$ with a fill factor of 0.127 due to the relatively high remaining COD even after the MFC reaction.

• Journal of Advanced Marine Engineering and Technology
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• v.21 no.4
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• pp.387-392
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• 1997

This paper describes a combination surge generator for carrying out performance tests on the surge protection circuits of shipboard electrical systems. Pspice simulations were performed to decide the values of the parts required and to analyze the characteristics of the generator circuitry. The surge generator fabricated can produce four of the most common surge test waveforms : the O.5i/S/100kHz Ringwave, the 1.2/50$\mu$S voltage, the 8/20$\mu$S current, and the lO/lOOOi/S voltage wave¬forms specified in ANSI Std. C62. Source impedances of the surge generator are 12$\Omega$ in the O.5$\mu$S/100kHz mode, O.5$\Omega$ in the 1.2/50$\mu$S and 8/20$\mu$S mode, and 40$\Omega$in the l0/1000$\mu$S mode, and are determined by the ratio of the maxi¬mum open - circuit voltage to the maximum short - circuit current. Experimental results show that the surge generator provides most of the outputs required for the testing of the surge protection circuits on shipboard electrical systems.

• Journal of the Korean institute of surface engineering
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• v.49 no.2
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• pp.186-190
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• 2016

In this study, we fabricated the transparent photovoltaic device using 2-dimensional transition-metal dichalcogenides and investigated the transparency and photovoltaic characteristics. P-n heterojunction was formed by mechanical exfoliation and aligned transfer method on the transparent sheet using n-type $MoS_2$ and p-type $WSe_2$. Our transparent photovoltaic device exhibited the open-circuit voltage of ~ 0.15 V and the short-circuit current of 0.48 nA under illumination of white light.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.441-441
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• 2014

The characteristics of hybrid conductive films based on multilayer graphene and silver grid have been investigated for the high-performance and flexible organic solar cells. The hybrid conductive films have been prepared on glass and polyethylene terephthalate (PET) substrates using conventional photolithography process and transfer process of graphene. The optical and electrical properties of prepared conductive films show transmittance of 87% at 550nm and sheet resistance of $28{\Omega}/square$. The electromechanical properties were also investigated in detail to confirm the flexibility of the hybrid films. OSCs have been fabricated on the hybrid conductive films based on graphene and silver grid on glass substrate. The power conversion efficiency of 2.38%, a fill factor of 51%, an open circuit voltage of 0.58V and a short circuit current of $8.05mA/cm^2$ were obtained from the device on glass substrate. The PCE was enhanced 11% compared with OSCs on the MLG films without silver grid.

• Journal of the Korean Society of Safety
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• v.28 no.2
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• pp.26-30
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• 2013

The purpose of this study is to find risk factors by analyzing the operation principle of a photo coupler (P/C) used to remove the noise of electronic devices and establish a base for the performance improvement of developed products. It was found from the P/C circuit analysis of normal products that they were equipped with an electrolytic condenser of $0.1{\mu}F$ to smooth system signals. Due to the epoxy resin packing the external part of the P/C, this study experienced a limit to visually examine the damage to it. It could be seen from the analysis of electric characteristics of the P/C that the forward voltage ($V_f$) and reverse current ($I_r$) were 1.3 V and 10 uA, respectively. In addition, it is required that the breakdown voltage (VCE) between the collector (C) and emitter (E) be maintained at less than 35 V. The and of the damaged product #1 were comparatively good. However, the measurement of was 100.0 uA. From this, it is thought that a short circuit occurred to the internal circuit. Moreover, from the fact that the of the damaged product #2 was open circuit and the measurement of was 0.0 uA, it is thought that the collector and emitter was separated or insulation resistance was significantly high. Furthermore, from the fact that the of the damaged product #3 was open circuit and the measurement of was 0.0 uA, it is thought that the space between the collector (C) and emitter (E) failed to meet the design standard or that they were separated. Therefore, it is thought that fabricating the P/C by increasing the reverse current 10 mA to 50 mA will prevent its malfunction.