• Restorative Dentistry and Endodontics
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• v.36 no.2
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• pp.119-124
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• 2011

Objectives: The purpose of this experiment was to evaluate four different polishing systems of their polishability and polishing time. Materials and Methods: 4 mm diameter and 2 mm thickness Teflon mold was made. Z-250 (3M ESPE) hybrid composite resin was slightly overfilled and pressed with slide glass and cured with Optilux 501 for 40 sec each side. Then the surface roughness (glass pressed: control group) was measured with profilometer. One surface of the specimen was roughened by #320 grit sand paper and polished with one of the following polishing systems; Sof-Lex (3M ESPE), Jiffy (Ultradent), Enhance (Dentsply/Caulk), or Pogo (Dentsply/Caulk). The surface roughness and the total polishing time were measured. The results were analyzed with one-way ANOVA and Duncan's multiple range test. Results: The surface roughness was lowest in Pogo, and highest in Sof-Lex. Polishing times were shortest with Pogo, and followed by the Sof-Lex, Enhance and Jiffy. Conclusions: One-step polishing system (Pogo) is very effective to get the smooth surface in a short time, therefore it can be recommended for final polishing system of the restoration.

• Restorative Dentistry and Endodontics
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• v.49 no.3
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• pp.30.1-30.12
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• 2024

Objectives: The aim of the current study was to evaluate the effect of polishing systems and surface sealant on the color stability and whiteness index of single-shade resin composites after staining and bleaching. Materials and Methods: Three single-shade (Omnichroma, Charisma Diamond One, Zenchroma) and one multi-shade (Filtek Z250) materials were tested. From each resin composite, 40 specimens were prepared. The specimens were divided into 4 subgroups (n = 10) according to the surface treatments: 1-step polishing, 1-step + Biscover LV, 2-step polishing, and 2-step polishing + Biscover LV. Color differences (ΔE₀₀) were calculated after being immersed in the coffee solution for 12 days. After the staining, the specimens were immersed in a whitening mouthrinse (Crest-3D White) for 12 hours. Whiteness index differences (ΔWI_D = WI_D after staining - WI_D after bleaching) values were recorded. The generalized linear model was used for analysis (p< 0.05). Results: The lowest and highest ΔE₀₀ values were found for Zenchroma and Charisma Diamond One respectively. Sealed groups indicated higher ΔE₀₀ values than nonsealed groups with significant differences (p = 0.008). The lowest and highest ΔWI_D values were found for Zenchroma and Charisma Diamond One respectively. Sealed groups indicated lower ΔWI_D values than nonsealed groups with significant differences (p = 0.022). Conclusions: The use of surface sealant increased the discoloration and showed less whiteness change in resin materials. When the 1-step was compared with the 2-step polishing, the effects on the color stability and whiteness index values of the resin materials were similar.

• Journal of Technologic Dentistry
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• v.37 no.4
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• pp.205-212
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• 2015

Purpose: The objective of this study was to compare the surface roughness according to polishing process in conventional laboratory techniques used for polishing three different acrylic denture base resins. Materials and methods: Specimen preparation and surface polishing procedures were conducted to manufacturer's recommendation with three heat-polymerized denture base resins. Surface roughness and gloss were measured by a contact type tester and a LED gloss checker using thickness 2 mm and diameter 10 mm. There were five specimens for each acrylic resin material and polishing procedures. Mean average surface roughness (Ra) values of each specimen group were analyzed using a one-way ANOVA analysis of variance and Scheffe's post hoc test. Surfaces after surface roughness and gloss testing according to each polishing process were evaluated under a stereoscopic microscope. Results: The highest mean average surface roughness was measured($Ra=2.43{\pm}0.47$) for surfaces finished with a denture tungsten carbide bur in Triplex. The lowest surface roughness values ($Ra=0.11{\pm}0.07$) were determined in Vertex polished with a lathe. In addition, all materials revealed that surface roughness determined highly in HP1 and HP2 than other procedures. All correlation between surface roughness and gloss showed highly with three heat-polymerized resins. Specially, topmost correlation revealed than other material in Triplex. Significant differences in mean average surface roughness were found between polishing process used high speed lathe and low speed hand-piece. Conclusion: Laboratory polishing used to high speed was found to produce the smoothest surface of heat-polymerized denture base acrylic resin. Therefore, we recommended that high polishing process need to get smooth surface.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.19 no.4
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• pp.455-461
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• 2010

Automated magnetic abrasive polishing which can be applied after machining of the mold on a machine tool without unloading is very effective for finishing a complicated injection mold surface. This study aims to realize one step polishing of free form surface with the same machine tool. For this purpose, magnetic flux density according to the change of curvature radii was simulated for selecting polishing conditions and experimental verification was performed with a complicated mold of aluminum alloy. As a result, it was seen by the simulation that the magnetic flux density at a gradual curvature of the mold was higher than at a steep curvature and the higher magnetic flux density produced the better surface roughness in the experimentation. The deviation for the surface roughness of the mold decreased on the whole and the uniform mold surface was obtained after the automated magnetic abrasive polishing.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.5
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• pp.149-158
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• 2002

Recently, the minimum line width shows a tendency to decrease and the multi-level increases in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. However there are several defects in CMF, such as micro-scratches, abrasive contaminations and non-uniformity of polished wafer edges. Wet etching process including spin-etching can eliminate the defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(Interlayer-Dielectric) was removed by CMP and wet etching process using DHF(Diluted HF) in order to investigate the possibility of planrization by wet etching mechanism. In the thin film wafer, the results were evaluated from the viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And the pattern step heights were also compared for the purpose of planarity characterization of the patterned wafer. Moreover, Chemical polishing process which is the wet etching process with mechanical energy was introduced and evaluated for examining the characteristics of planarization.

• Restorative Dentistry and Endodontics
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• v.22 no.2
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• pp.680-692
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• 1997

New bonding agent systems have been supplied which operators can simply apply to conditioned tooth surfaces. The purpose of this study was to evaluate the shear bond strengths and the microleakages of three bonding agents and composite resins to dentin. Seventy-five extracted human maxillary and mandibular molar teeth were used in this study. For the shear bond strength test, the entire occlusal dentin surfaces of thirty teeth were exposed with Diamond Wheel Saw and smoothed with Lapping and Polishing Machine (South Bay Technology Co., U.S.A). For the microleakage test, Class V cavities were prepared in the buccal surfaces of fourtyfive teeth. They were randomly assigned into 3 groups according to dentin bonding agents ($Scotchbond^{TM}$ Multi-Purpose plus, ONE-$STEP^{TM}$ and Prime & $Bond^{TM}$)and composite resins (Z-100, $Aelitefil^{TM}$ and TPH $Spectrum^{TM}$) to be used. Bonding agents and composite resins were bonded to exposed dentin surfaces of the tooth crown and to Class V cavities on the buccal surfaces respectively according to manufacturer's directions. The shear bond strengths were measured by universal testing machine($U^{TM}$ AGS-100, Japan). In addition, the degree of micro leakage at the occlusal and gingival margin was examined by 2 % methylene blue and stereomicroscope(Olymous SZH 10, Japan). The results were as follows: 1. The shear bond strength to dentin was the highest value in SBMP-Plus group($16.68{\pm}7.38$ MPa) and the lowest value in Prime & Bond group($11.61{\pm}5.82$ MPa), but there was no significant difference of shear bond strength among three groups. 2. The degree of microleakage at both occlusal and gingival margin was showed the lowest in SBMP-Plus group and the highest in ONE-STEP group. 3. At both occlusal and gingival margin, there was significant difference of microleakage between SBMP-Plus and ONE-STEP/ Prime & Bond groups(p<0.05), but no significant difference of microleakage between ONE-STEP and Prime & Bond group(p>0.05).

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.153-153
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• 2016

Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the sea water upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Afterward, the irregular oxide film that was created in the first step surface modification was removed. For the second step surface modification process (identical to the step 1), etching was performed using mixture of chromic acid (1.8 wt.%) and phosphoric acid (6 wt.%) at $60^{\circ}C$ temperature for 30 minutes. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification presented a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

• Korean Chemical Engineering Research
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• v.53 no.4
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• pp.517-523
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• 2015

As the aluminum (Al) metallization process was replaced with copper (Cu), the damascene process was introduced, which required the planarization step to eliminate over-deposited Cu with Chemical Mechanical Polishing (CMP) process. In this study, the verification of the corrosion inhibitors, one of the Cu CMP slurry components, was conducted to find out the tendency regarding the carboxyl and amino functional group in neutral environment. Through the results of etch rate, removal rate, and chemical ability of corrosion inhibitors based on 1H-1,2,4-triazole as the base-corrosion inhibitor, while the amine functional group presents high Cu etching ability, carboxyl functional group shows lower Cu etching ability than base-corrosion inhibitor which means that it increases passivation effect by making strong passivation layer. It implies that the corrosion inhibitor with amine functional group was proper to apply for 1st Cu CMP slurry owing to the high etch rate and with carboxyl functional group was favorable for the 2nd Cu CMP slurry due to the high Cu removal rate/dissolution rate ratio.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.319-325
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• 2017

Through silicon via (TSV) technology is extensively used in 3D IC integrations. The special structure of the TSV is realized by CMP (Chemically Mechanical Polishing) process with a high Cu removal rate and, low dishing, yielding fine topography without defects. In this study, we investigated the electrochemical behavior of copper slurries with various inhibitors in the Cu CMP process for advanced TSV applications. One of the slurries was carried out for the most promising process with a high removal rate (${\sim}18000{\AA}/Min$ @ 3 psi) and low dishing (${\sim}800{\AA}$), providing good microstructure. The effects of pH value and $H_2O_2$ concentration on the slurry corrosion potential and Cu static etching rate (SER) were also examined. The slurry formula with a pH of 6 and 2% $H_2O_2$, hadthe lowest SER (${\sim}75{\AA}/Min$) and was the best for TSV CMP. A novel Cu TSV CMP process was developed with two CMPs and an additional annealing step after some of the bulk Cu had been removed, effectively improving the condition of the TSV Cu surface and preventing the formation of crack defects by variations in wafer stress during TSV process integration.