• Journal of information and communication convergence engineering
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• v.18 no.3
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• pp.201-206
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• 2020

This paper presents a new method for controlling the current of lighting LEDs without current sensors. This method can be used as backup against LED current sensor faults. LED lighting requires a circuit with a constant current in order to maintain the same brightness when the ambient temperature changes. Therefore, we propose a new current estimation method to provide backup in case of current sensor faults based on the calculation of the inductor current. In the fabricated circuit, the average current changes from 144.03 mA to 155.97 mA when the ambient temperature changes from 0℃ to 60℃. The application of this study can enable the fabrication of a driving IC for LEDs in the form of a single chip without sensing resistors. This is expected to reduce the complexity of the peripheral circuit and enable precise feedback control.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.1237-1238
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• 2006

When the coil with alternating current approaches to the conductor the eddy current flows in conductor. Eddy current is concentrated on the conductor surface and decrescent because of skin effet.. In this paper investigated eddy current characteristic that is happened in conductor. Analyzed characteristic using electromagnetic field finite element analysis program that is commercialized to analyze value of eddy current and penetration depth. Analyzed creation value of eddy current and penetration depth in conductor that change operation frequency and the material of conductor, coil outside diameter, inside diameter, position, type of conductor from analyzed eddy current characteristic. The results. using distribution of eddy current and penetration depth data is that will help to forecast ECT(Eddy Current Testing), Eddy current application and use field, eddy current loss.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1697-1698
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• 2006

When the coil with alternating current approaches to the conductor the eddy current flows in conductor. Eddy current is concentrated on the conductor surface and decrescent because of skin effect. In this paper investigated eddy current characteristic that is happened in conductor. Analyzed characteristic using electromagnetic field finite element analysis program that is commercialized to analyze value of eddy current and penetration depth. Analyzed creation value of eddy current and penetration depth in conductor that change operation frequency and the material of conductor, coil outside diameter, inside diameter, position, type of conductor from analyzed eddy current characteristic. The results, using distribution of eddy current and penetration depth data is that will help to forecast ECT(Eddy Current Testing), Eddy current application and use field, eddy current loss.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.5
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• pp.878-882
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• 2016

These days, SFCLs are being developed in order to limit fault current. However, the superconducting elements that limit the fault current have such problems as capacity increase and require auxiliary devices including cooling device. If devices that comprise the current power network can withstand fault current for at least one cycle, it is possible to limit the fault current with current limiting elements by bypassing it on the fault line. In this study, the fault current limiter was configured with current transformer, vacuum interrupter, and current limiting element. Through the experience, it was confirmed that the fault current was limited within one cycle. The superconducting element, as a current limiting element, limited the fault current by 80 % within one cycle from fault occurrence, and the passive element limited it more than 95 %. Also, through the comparison between resistance curve and power consumption curve, it was confirmed that the current limiting element using a passive element was more stable than the superconducting element that required capacity increase and other auxiliary devices. It was considered that the FCL proposed in this study could limit fault current stably within one cycle from fault occurrence by using the existing power technologies such as fault current detection and solenoid valve operating circuit.

• Progress in Superconductivity and Cryogenics
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• v.1 no.2
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• pp.37-42
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• 1999

The stability of high-temperature superconducting current leads for cryogenic devices are investigated. By assuming full transition from superconducting state to normal state at a transition temperature, the HTS current at a transition temperature, the HTS current lead shows bifurcation phenomenon. There is a bifurcation shape-factor, HTS leads have three steady state. Below the bifurcation shape-factor, the superconducting current lead is unconditionally stable, because there exists only one steady-factor HTS current lead is conditionally stable depending on the shape and intensity of disturbance.

• Corrosion Science and Technology
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• v.8 no.3
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• pp.93-102
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• 2009

The direct-current electroetching of high purity aluminum in hot aqueous-chloride solution produces a high density of micrometer-wide tunnels whose walls are made up of the {100} planes and penetrate aluminum in the <100> directions at rates of micrometer per second. In the process of the alternating-current pitting of aluminum, cathodic polarization plays an important role in the nucleation and growth of the pits during the subsequent polarization. The direct-current tunnel etching and alternating-current etching of aluminum are basically related to the formation of poorly crystallized or amorphous passive films. If the passive film forms on the wall, a natural misfit exists between the film and the aluminum substrate, which in turn gives rise to stress in both the film and the substrate. Even though the amorphous films do not have directed properties, their stresses are influenced by the substrate orientation. The films on elastically soft substrate are likely to be less stressed and more stable than those on elastically hard substrate. The hardest and softest planes of aluminum are the {111} and {100} planes, respectively. Therefore, the films on the {111} substrates are most likely to be attacked, and those on the {100} substrates are least likely to be attacked. For the tunnel etching, it follows that the tunnel walls tend to consist of the {100} planes. Meanwhile, the tunnel tip, where active corrosion takes place, tend to be made of four closely packed {111} planes in order to minimize the surface energy, which gives rise to the <100> tunnel etching.

• Ocean and Polar Research
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• v.31 no.4
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• pp.389-399
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• 2009

Subsurface pressure gauge has many advantages in measuring a wide range of wave spectra in coastal waters from wind waves to long waves. However, a shortcoming of the gauge is related to the difficulties in recovering surface wave spectra from subsurface pressure records. In this study, the effect of current on the pressure transfer function of the pressure gauge, and hence on the surface wave energy spectrum, was investigated by analyzing the subsurface pressure data based on the linear wave theory. For this purpose, laboratory experiments were carried out in a wave-current flume. Subsurface pressure records, as well as the surface elevation data, were obtained simultaneously under different wave and current conditions. Pressure transfer functions were obtained and compared with those estimated from the linear wave theory, both with and without inclusion of the current-effect. It was established that wave spectra obtained from subsurface pressure gauge were in closer agreement with those from surface wave gauge when current-effect on the pressure transfer function was taken into consideration for analysis.

• Proceedings of the KIPE Conference
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• 2018.07a
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• pp.522-524
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• 2018

A New Direct AC LED Driver has been proposed for wide output power range and precise constant current regulation using an advanced auto commutation topology. The conventional shunt regulation method provides a stepped input current shape by fixed regulation references in the linear regulator of the each channel, which results in poor current regulation and high THD. The conventional method needs to assign a linear regulator in each LED channel so that the number of linear regulator increases when extending the number of channels especially at high power application. The proposed regulation method can drive multiple switches to regulate each LED channel current by a single amplifier with sinusoidal reference so that large number of LED channel can be simply extended with less BOM cost and low THD is obtained with the accurate current regulation thanks to the sinusoidal input current control in the closed loop control. To confirm the validity of the proposed circuit, theoretical analysis and experimental results from a 20-W LED driver prototype are presented.

• Transactions on Electrical and Electronic Materials
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• v.10 no.6
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• pp.189-192
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• 2009

The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.