• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.7
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• pp.1434-1437
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• 2011

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.2
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• pp.111-123
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• 2019

In this paper, we propose a method for defining the input termination for on-wafer-type device under test (DUT) measurement. Using the newly defined input termination and noise wave correlation matrix (NWCM) measurement method based on noise power ratio, the NWCM of the on-wafer-type DUT was measured. We demonstrate a noise measurement configuration that includes wafer probes and bias tees to measure the on-wafer DUT. The S-parameter of the adapter that combines the bias tee, probe, and a line terminated by open is required to define the input termination for on-wafer DUT measurement. To measure the S-parameter of the adapter, a 2-port S-parameter measurement method using 1-port measurement is introduced. Using the measured S-parameters, a method for defining the new input termination for on-wafer-type DUT measurement is applied. The proposed method involves the measurement of the NWCM of the chip with a 1.5 dB noise figure. The noise parameters of the chip were obtained using the measured NWCM. The results indicate that the obtained values of the noise parameters are similar to those mentioned on a datasheet for the chip. In addition, repeated measurements yielded similar results, thereby confirming the reliability of the measurements.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.9-15
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• 2003

This paper proposes a thickness measurement method of silicon-oxide and poly-silicon film deposited on 12" silicon wafer for spin etcher. Halogen lamp is used as a light source for generating a wide-band spectrum, which is guided and focused on the wafer surface through a optical fiber cable. Interference signal from the film is detected by optical sensor to determine the thickness of the film using spectrum analysis and several signal processing techniques including curve-fitting and adaptive filtering. Test wafers with three kinds of priori-known films, polysilicon(300 nm), silicon-oxide(500 nm) and silicon-oxide(600 nm), are measured while the wafer is spinning at 20 Hz and DI water flowing on the wafer surface. From experiment results the algorithm presented in the paper is proved to be effective with accuracy of maximum 0.8% error.rror.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.129-137
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• 2000

In this paper, a new method of noncontact measurement has been developed for a 3 dimensional topography in semiconductor wafer, implementing a new optical probe based on the precision defocus measurement. The developed technique consists of the new optical probe, precision stages, and the measurement/control system. The basic principle of the technique is to use the reflected slit beam from the specimen surface, and to measure the deviation of the specimen surface. The defocusing distance can be measured by the reflected slit beam, where the defocused image is measured by the proposed optical probe, giving very high resolution. The distance measuring formula has been proposed for the developed probe, using the laws of geometric optics. The precision calibration technique has been applied, giving about 10 nanometer resolution and 72 nanometer of four sigma uncertainty. In order to quantitize the micro pattern in the specimen surface, some efficient analysis algorithms have been developed to analyse the 3D topography pattern and some parameters of the surface. The developed system has been successfully applied to measure the wafer surface, demonstrating the line scanning feature and excellent 3 dimensional measurement capability.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.86-90
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• 2018

Standards related to express the non-flatness of a wafer are reviewed and discussed, for example, bow, warp, and sori. Novel wafer warpage measurement method is proposed for 3D stacked IC application. The new way measures heat transfer from a heater to a wafer, which is a function of the contact area between these two surfaces and in turn, this contact area depends on the wafer warpage. Measurement options such as heating from room temperature and cooling from high temperature were experimentally examined. The heating method was found to be sensitive to environmental conditions. The cooling technique showed more robust and repeatable results and the further investigation for the optimal cooling condition is underway.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.13 no.6
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• pp.139-144
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• 2014

As a result of a mismatch of the residual stress between both sides of the silicon wafer, which warps and distorts during the patterning process. The accuracy of the warpage measurement is related to the calibration. A CCD camera was used for the calibration. Performing optimization of the error function constructed with phase values measured at each pixel on the CCD camera, the coordinates of each light source can be precisely determined. Measurement results after calibration was performed to determine the warpage of the silicon wafer demonstrate that the maximum discrepancy is $5.6{\mu}m$ with a standard deviation of $1.5{\mu}m$ in comparison with the test results obtained by using a Form TalySurf instrument.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.861-864
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• 2005

Performing accurate and repeatable low frequency noise measurement is critical for modeling and simulation of flicker noise. Through the accurate and repeatable on-wafer measurement, low frequency noise characteristics of the 0.18 ${\mu}m$ n-MOSFETs are discussed. And on-wafer flicker noise measurement system is presented. The on-wafer measurement system consists of cascade probe station, low noise current amplifier (SR570), and dynamic signal analyzer (HP35670A).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.