Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Low Frequency Noise Characteristics of the 180nm MOSFETs

  • Yoon, Young-Chang (School of Electrical Engineering, Seoul National University) ;
  • Lee, Ho-Cheol (School of Electrical Engineering, Seoul National University) ;
  • Kang, In-Man (School of Electrical Engineering, Seoul National University) ;
  • Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University)
  • Published : 2005.11.26
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Abstract

Performing accurate and repeatable low frequency noise measurement is critical for modeling and simulation of flicker noise. Through the accurate and repeatable on-wafer measurement, low frequency noise characteristics of the 0.18 ${\mu}m$ n-MOSFETs are discussed. And on-wafer flicker noise measurement system is presented. The on-wafer measurement system consists of cascade probe station, low noise current amplifier (SR570), and dynamic signal analyzer (HP35670A).

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